Abstract: A system and a method for increasing a rate of transfer of data between a radio frequency (RF) generator and a host computer system is described. The rate of transfer of data is increased by implementing dedicated physical layers associated with the RF generator and the host computer system and a dedicated physical communication medium between the RF generator and the host computer system. Moreover, a dual push operation is used between the RF generator and the host computer system. There is no request for data sent from the RF generator to the host computer system or from the host computer system to the RF generator.

Abstract: Systems and methods for segmenting an impedance matching model are described. One of the methods includes receiving the impedance matching model. The impedance matching model represents an impedance matching circuit, which is coupled to an RF generator via an RF cable and to a plasma chamber via an RF transmission line. The method further includes segmenting the impedance matching model into two or more modules of a first set. Each module includes a series circuit and a shunt circuit. The shunt circuit is coupled to the series circuit. The series circuit of the first module is coupled to a cable model and the series circuit of the second module is coupled to an RF transmission model. The series circuit and the shunt circuit of the first module are coupled to the series circuit of the second module. The shunt circuit of the second module is coupled to the RF transmission model.

Abstract: Systems and methods for reducing reflected towards a higher frequency radio frequency (RF) generator during a period of a lower frequency RF generator and for using a relationship to reduce reflected power are described. By tuning the higher frequency RF generator during the period of the lower frequency RF generator, precise control of the higher frequency RF generator is achieved for reducing power reflected towards the higher frequency RF generator. Moreover, by using the relationship to reduce the reflected power, time is saved during processing of a wafer.

Abstract: A method for achieving an etch rate is described. The method includes receiving a calculated variable associated with processing a work piece in a plasma chamber. The method further includes propagating the calculated variable through a model to generate a value of the calculated variable at an output of the model, identifying a calculated processing rate associated with the value, and identifying based on the calculated processing rate a pre-determined processing rate. The method also includes identifying a pre-determined variable to be achieved at the output based on the pre-determined processing rate and identifying a characteristics associated with a real and imaginary portions of the pre-determined variable. The method includes controlling variable circuit components to achieve the characteristics to further achieve the pre-determined variable.

Abstract: Systems and methods for tuning an impedance matching network in a step-wise fashion are described. By tuning the impedance matching network in a step-wise fashion instead of directly to achieve optimum values of a radio frequency (RF) and a combined variable capacitance, processing of a wafer using the tuned optimal values becomes feasible.

Abstract: Systems and methods for tuning an impedance matching network in a step-wise fashion for each state are described. By tuning the impedance matching network in a step-wise fashion for each state instead of directly achieving optimum values of a radio frequency (RF) for each state and directly achieving an optimal value of a combined variable capacitance for each state, processing of a wafer using the tuned optimal values becomes feasible.

Abstract: A method for achieving an etch rate is described. The method includes receiving a calculated variable associated with processing a work piece in a plasma chamber. The method further includes propagating the calculated variable through a model to generate a value of the calculated variable at an output of the model, identifying a calculated processing rate associated with the value, and identifying based on the calculated processing rate a pre-determined processing rate. The method also includes identifying a pre-determined variable to be achieved at the output based on the pre-determined processing rate and identifying a characteristics associated with a real and imaginary portions of the pre-determined variable. The method includes controlling variable circuit components to achieve the characteristics to further achieve the pre-determined variable.

Abstract: Systems and methods for determining wafer bias are described. One of the methods includes detecting output of a generator to identify a generator output complex voltage and current (V&I). The generator is coupled to an impedance matching circuit and the impedance matching circuit is coupled to an electrostatic chuck (ESC). The method further includes determining from the generator output complex V&I a projected complex V&I at a point along a path between an output of a model of the impedance matching circuit and a model of the ESC. The operation of determining of the projected complex V&I is performed using a model for at least part of the path. The method includes applying the projected complex V&I as an input to a function to map the projected complex V&I to a wafer bias value at the ESC model.

Abstract: Systems and methods for using variables based on multiple states associated with a plasma system are described. A method includes determining whether the state associated with the plasma system is a first, second, or third state and determining a first variable upon determining that the state is the first state. The method further includes determining a second variable upon determining that the state is the second state and determining a third variable upon determining that the state is the third state. The method includes determining whether each of the first variable, the second variable, and the third variable is within a corresponding range from a corresponding threshold. The method includes providing an instruction to change power supplied to a plasma chamber upon determining that the first, second, or third variable is outside the corresponding range from the corresponding threshold.

Abstract: A system and method monitoring a plasma with an optical sensor to determine the operations of a pulsed RF signal for plasma processing including a plasma chamber with an optical sensor directed toward a plasma region. An RF generator coupled to the plasma chamber through a match circuit. An RF timing system coupled to the RF generator. A system controller is coupled to the plasma chamber, the RF generator, the optical sensor, the RF timing system and the match circuit. The system controller includes a central processing unit, a memory system, a set of RF generator settings and an optical pulsed plasma analyzer coupled to the optical sensor and being capable to determine a timing of a change in state of an optical emission received in the optical sensor and/or a set of amplitude statistics corresponding to an amplitude of the optical emission received in the optical sensor.

Abstract: Systems and methods for determining a malfunctioning device in a plasma system, are described. One of the methods includes receiving an indication whether plasma is generated within a plasma chamber of the plasma system. The plasma system includes a processing portion and a power delivery portion. The method further includes determining whether the plasma system operates within constraints in response to receiving the indication that the plasma is generated, determining a value of a variable at an output of the power delivery portion when the processing portion is decoupled from the power delivery portion, and comparing the determined value with a pre-recorded value of the variable. The method includes determining whether the determined value is outside a range of the pre-recorded value and determining that the malfunctioning device within the power delivery portion upon determining that the determined value is outside the range of the pre-recorded value.

Abstract: Systems and methods for tuning an impedance matching network in a step-wise fashion are described. By tuning the impedance matching network in a step-wise fashion instead of directly to achieve optimum values of a radio frequency (RF) and a combined variable capacitance, processing of a wafer using the tuned optimal values becomes feasible.

Abstract: Systems and methods for tuning an impedance matching network in a step-wise fashion for each state transition are described. By tuning the impedance matching network in a step-wise fashion for each state transition instead of directly achieving an optimal value of a combined variable capacitance for each state, processing of a wafer using the tuned optimal values becomes feasible.

Abstract: Systems and methods for tuning a radio frequency (RF) generator are described. One of the methods includes supplying, by a high frequency RF generator, a high frequency RF signal to the IMN. The method includes accessing a plurality of measurement values of a variable measured at an output of the high frequency RF generator to generate a parameter. The variable is measured during a plurality of cycles of operation of a low frequency RF generator. The measurement values are associated with a plurality of values of power supplied by the high frequency RF generator. The method includes determining, for one of the cycles, a value of a frequency of the high frequency RF generator and a value of a factor associated with a shunt circuit of the IMN for which there is an increase in efficiency in power delivered by the high frequency RF generator.

Abstract: A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal.

Abstract: Systems and methods for state-based adjustment of power and frequency are described. A primary generator of a system includes a primary power supply for supplying a primary radio frequency (RF) signal to an electrode. The primary generator further includes an automatic frequency control (AFC) to provide a first frequency input to the primary power supply when a pulsed signal is in a first state. A secondary generator of the system includes a secondary power supply for supplying a secondary RF signal to the electrode. The secondary generator also includes an AFC to provide a second frequency input to the secondary power supply when the pulsed signal is in the first state. The secondary generator includes an AFC to provide a third frequency input to the secondary power supply when the pulsed signal is in a second state. The system includes a digital pulsing source for generating the pulsed signal.

Abstract: A method to detect a potential fault in a plasma system is described. The method includes accessing a model of one or more parts of the plasma system. The method further includes receiving data regarding a supply of RF power to a plasma chamber. The RF power is supplied using a configuration that includes one or more states. The method also includes using the data to produce model data at an output of the model. The method includes examining the model data. The examination is of one or more variables that characterize performance of a plasma process of the plasma system. The method includes identifying the fault for the one or more variables. The method further includes determining that the fault has occurred for a pre-determined period of time such that the fault is identified as an event. The method includes classifying the event.

Abstract: A system and a method for increasing a rate of transfer of data between a radio frequency (RF) generator and a host computer system is described. The rate of transfer of data is increased by implementing dedicated physical layers associated with the RF generator and the host computer system and a dedicated physical communication medium between the RF generator and the host computer system. Moreover, a dual push operation is used between the RF generator and the host computer system. There is no request for data sent from the RF generator to the host computer system or from the host computer system to the RF generator.

Abstract: Systems and methods for synchronizing execution of recipe sets are described. One of the methods includes sending by a command controller to a master controller a recipe set and sending by the master controller the recipe set for execution by a sub-system controller of a plasma system. The operation of sending the recipe set from the master controller to the sub-controller is performed during a first clock cycle of a clock signal. The method includes generating by the command controller a recipe event signal and sending by the command controller to the sub-system controller the recipe event signal indicating a time of execution of the recipe set by the sub-system controller. The time of execution occurs during a second clock cycle that follows the first clock cycle. The second cycle is of the clock signal.

Abstract: Systems and methods for tuning a radio frequency (RF) generator are described. One of the methods includes supplying, by a high frequency RF generator, a high frequency RF signal to the IMN. The method includes accessing a plurality of measurement values of a variable measured at an output of the high frequency RF generator to generate a parameter. The variable is measured during a plurality of cycles of operation of a low frequency RF generator. The measurement values are associated with a plurality of values of power supplied by the high frequency RF generator. The method includes determining, for one of the cycles, a value of a frequency of the high frequency RF generator and a value of a factor associated with a shunt circuit of the IMN for which there is an increase in efficiency in power delivered by the high frequency RF generator.