Abstract: A downhole debris recovery tool including a ported sub coupled to a debris sub, a suction tube disposed in the debris sub, and an annular jet pump sub disposed in the ported sub and fluidly connected to the suction tube is disclosed. A method of removing debris from a wellbore including the steps of lowering a downhole debris removal tool into the wellbore, the downhole debris removal tool having an annular jet pump sub, a mixing tube, a diffuser, and a suction tube, flowing a fluid through a bore of the annular jet pump sub, jetting the fluid from the annular jet pump sub into the mixing tube, displacing an initially static fluid in the mixing tube through the diffuser, thereby creating a vacuum effect in the suction tube to draw a debris-laden fluid into the downhole debris removal tool, and removing the tool downhole debris removal tool from the wellbore after a predetermined time interval is also disclosed.

Abstract: A downhole tool including a resilient body configured to be disposed on a drill string, the resilient body comprising a plurality of radial blades having an abrasive coating, wherein the radial blades are configured to deflect when inserted into downhole tubing, and wherein the resilient body is configured to allow rotation relative to the drill string. Additionally, a method for cleaning downhole tubing, the method including inserting a resilient scraper disposed on a drill string into the downhole tubing, the resilient scraper including a plurality of radial blades having an abrasive coating. The method further including rotating the drill string, and contacting the resilient scraper to an internal wall of the downhole tubing.

Abstract: A downhole debris recovery tool including a ported sub coupled to a debris sub, a suction tube disposed in the debris sub, at least one magnet disposed in the debris removal tool, and an annular jet pump sub disposed in the ported sub and fluidly connected to the suction tube. A method of removing debris from a wellbore including the steps of lowering a downhole debris removal tool into the wellbore, flowing a fluid through a bore of an annular jet pump sub, jetting the fluid from the annular jet pump sub into a mixing tube, displacing an initially static fluid in the mixing tube through a diffuser, thereby creating a vacuum effect in a suction tube to draw a debris-laden fluid into the tool, flowing the debris-laden fluid past at least one magnet disposed in a debris housing, and removing the tool from the wellbore is also disclosed.

Abstract: Various embodiments disclose devices and methods for fabricating microporous particulate filters with regularly spaced pores wherein sheet membrane substrates are exposed to energetic particle radiation through a mask and the damaged regions removed in a suitable developer. The required depth of field is achieved by using energetic particles to minimize diffraction and an energetic particle source with suitably small diameter.

Abstract: A drillable bridge plug includes a mandrel having external splines disposed on an outer surface of the mandrel, a sealing element disposed around the mandrel, an upper cone disposed around the mandrel proximate an upper end of the sealing element, and a lower cone disposed around the mandrel proximate the lower end of the sealing element, wherein an inner surface of the lower cone comprises internal splines configured to engage the external splines. The drillable bridge plug also includes an upper and a lower slip assembly disposed around the mandrel, and an upper and lower ring assembly each including a first segmented barrier ring, a second segmented barrier ring, and a back-up ring disposed proximate sealing element. A method of setting the drillable bridge plug and a method of removing the drillable bridge plug are disclosed.

Abstract: Various embodiments disclose devices and methods for fabricating microporous particulate filters with regularly space pores wherein sheet membrane substrates are exposed to energetic particle radiation through a mask and the damaged regions removed in a suitable developer. The required depth of field is achieved by using energetic particles to minimize diffraction and an energetic particle source with suitably small diameter.

Abstract: An energetic neutral particle lithographic apparatus is disclosed for replicating sub-micron and nanoscale patterns including a source producing a beam of energetic neutral particles, comprising atoms or molecules, by charge transfer scattering of energetic ions from the molecules of a gas, a mask member having open stencil windows in a supporting membrane, an energetic neutral particle protective layer on the membrane, and a reproduction member consisting of an energetic neutral particle-sensitive layer between a substrate and the mask for absorbing energetic neutral particles in a pattern created by the mask.

Abstract: The present inventors have developed an accurate method for forming a plurality of images on a substrate. The present method provides an improved pattern replication technique that provides submicron resolution, for example 20 nm or less, especially 10 nm or less. The method may involve moving a structured beam of energetic radiation across a target substrate. The motion of an image of the template mask on the substrate is achieved by tilting a mask and substrate assembly relative to the axis of the incident beam. The technique does not require high precision motion of the template mask relative to the target substrate. The energetic radiation may comprise energetic particles. The technique is insensitive to particle energy and can be applied to uncharged, neutral particles.

Abstract: An RF diode reactive ion etching (RIE) method and apparatus (20) include an evacuable reaction chamber (22) in which an anode electrode (76) and cathode electrode (30)are spaced-apart facing each other and defining a gap (78) between the electrodes. A substrate (40) to be etched is placed in thermal contact with the cathode. A magnet (70) behind the anode provides a magnetic field which is characterized by lines-of-force (80) extending continuously through the gap from one of the electrodes to the other. To etch the substrate the reaction chamber is evacuated, an etchant-gas is admitted into the gap at a predetermined low pressure, a plasma (79) including ions of the etchant gas is generated by applying RF power to the electrodes. The substrate is etched by etchant gas ions attracted from the plasma toward the substrate by a negative self-bias potential established on the cathode.

Abstract: The present invention is, in part, a new process for dopant diffusion, both p-type (e.g., B) and n-type (e.g., P, As), into silicon wafers, using rapid thermal processing (RTP). It uses a surface layer of a new planar dopant as an active dopant source. Such a source is produced using either a rigid holder wafer with a spin-on dopant or CVD doped oxides deposited on its surface, or such a source is high pressure planar solid source having a surface that has been activated by dry etching or sputtering etching. Such a dopant source is placed in proximity to a processed silicon wafer in such a manner that its active surface is facing the surface of the silicon wafer during RTP. Both the silicon wafer and the dopant source are heated by lamps emitting light causing transport of dopant from the dopant source to the silicon surface.

Abstract: A process for depositing a compound of a metal and a reactive gas includes heating a metal target (32), in an evacuated chamber (22) to a predetermined reaction temperature. The reaction temperature is above a critical temperature which is higher than about half the melting point of the metal but below the vaporization temperature of the metal target. At this reaction temperature, the metal target reacts with the reactive gas to produce, in gaseous form, the compound or a sub-compound of the metal and the reactive gas. The gaseous compound or sub-compound is reacted with the reactive gas on a substrate (36) to form a solid layer of the compound on the substrate.

Abstract: The ion beam which performs the printing on the resist through the mask is also used to perform the alignment function. Alignment marks are initially provided on the wafer of a material which emits light when an ion beam impinges thereon, such as silicon dioxide. An ion mask, preferably of silicon, is then positioned over the wafer and alignment marks and ions are directed to the alignment marks through the mask. The degree of alignment is determined by the amount of light emitted by the alignment marks since more ions will strike the alignment marks with increased alignment. The emitted light is detected and +X, -X, +Y, -Y and +theta and -theta error signals are provided on a continuous basis for closed loop control of the mask relative to the wafer under proper alignment is achieved.

Abstract: Combination of a flattened cathode in a cylindrical magnetron sputtering system and positioning of a substrate relatively close to the flattened cathode allows deposition of a uniform film having good composition. The system and method of the present invention is especially suitable for depositing films using YBCO and BCSCO targets.

Abstract: An etching process and apparatus employ a novel magnetic enhancement means and a substantially pure molecular bromine plasma in order to perform in a desired manner for a number of important applications requiring etching of single-crystal and polycrystalline silicon.

Abstract: A high capacity, toothed belt having an elastomeric body composed of a single elastomeric compound which includes from 2 to 30 parts of short fiber flock reinforcement. The flock must have a length to diameter (L/D) ratio less than 10:1.

Abstract: Charged beam accessible data storage methods and devices involve a storage medium having an array of protrusions formed on a thermally insulative, substantially charged beam transparent base. The protrusions, made of high contrast material, can be selectively melted by a charged beam, such as an electron beam, in order to decrease the protrusions' aspect ratio and to increase their energy absorptive action when scanned by a charged beam. Since the melted protrusions do not wet on the base, the protrusions quickly assume a spherical bead shape when melted due to favorable surface tension forces. The bi-level charged beam absorption characteristics of the melted and unmelted protrusions provide the two "on" or "off" stored data states.

Abstract: A flexible coupling for rotatable shafts in the form of a metal bellows features a concentric sleeve which is fastened to one end of the coupling and which terminates in a plurality of fingers or keys projecting into, but without contact with, slots in the opposite end of the coupling. In normal use, the coupling transmits rotary motion from one shaft to the other shaft solely through the connecting bellows which provides the flexibility required for small amounts of misalignment and obliqueness of the coupled shafts. If the bellows broke, the concentric sleeve would function as the fail-safe coupling member to continue the transmission of the rotary motion.