Patents by Inventor John C. Young

John C. Young has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240120415
    Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. The perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers. Growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. The lattice-matched layers can be etched away, leaving the doped semiconductor layers as fins for a ribbon FET. A ferroelectric layer can be conformally grown on the fins, creating a high-quality ferroelectric layer above and below the fins. A gate can then be grown on the ferroelectric layer.
    Type: Application
    Filed: October 1, 2022
    Publication date: April 11, 2024
    Applicant: Intel Corporation
    Inventors: Scott B. Clendenning, Sudarat Lee, Kevin P. O'Brien, Rachel A. Steinhardt, John J. Plombon, Arnab Sen Gupta, Charles C. Mokhtarzadeh, Gauri Auluck, Tristan A. Tronic, Brandon Holybee, Matthew V. Metz, Dmitri Evgenievich Nikonov, Ian Alexander Young
  • Publication number: 20240113220
    Abstract: Technologies for a transistor with a thin-film ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a thin layer of scandium aluminum nitride (ScxAl1-xN) ferroelectric gate dielectric. The channel of the transistor may be, e.g., gallium nitride or molybdenum disulfide. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one-transistor memory cell.
    Type: Application
    Filed: September 30, 2022
    Publication date: April 4, 2024
    Applicant: Intel Corporation
    Inventors: Arnab Sen Gupta, Ian Alexander Young, Dmitri Evgenievich Nikonov, Marko Radosavljevic, Matthew V. Metz, John J. Plombon, Raseong Kim, Uygar E. Avci, Kevin P. O'Brien, Scott B. Clendenning, Jason C. Retasket, Shriram Shivaraman, Dominique A. Adams, Carly Rogan, Punyashloka Debashis, Brandon Holybee, Rachel A. Steinhardt, Sudarat Lee
  • Patent number: 4942863
    Abstract: A thermoelectric generating assembly for replacement of a heat exchanger mounted in a fuel-burning heater having electricity-consuming components includes a thermoelectric generator for supplying the electrical power requirements of the heater components and an adaptor portion for mounting the thermoelectric generator within the heater. The assembly possesses a size and shape which approximates that of the heat exchanger to be replaced and can be mounted within the heater in a manner like that in which the heat exchanger is mounted within the heater prior to removal. The method includes the steps involved in replacing the heat exchanger with the thermoelectric generating assembly.
    Type: Grant
    Filed: April 6, 1989
    Date of Patent: July 24, 1990
    Assignee: John C. Young
    Inventors: Der-Jeou Chou, John C. Young
  • Patent number: 4425475
    Abstract: A high-strength textile ribbon disposed against the webbing of the core of a parallel lead cable significantly enhances the breaking strength of the incorporating cable without significantly affecting its flexibility or electrical properties. Breaking strength may be further enhanced by bonding the ribbon to the webbing and the adjacent portion of the cable sheath.
    Type: Grant
    Filed: September 28, 1981
    Date of Patent: January 10, 1984
    Assignee: Cooper Industries, Inc.
    Inventors: Robert E. Ward, James A. Lasley, John C. Young