Abstract: The present disclosure relates to an avalanche photodiode comprising a substrate having an active area. A first dopant implant in the active area forms one of an anode and the cathode of the avalanche photodiode. A second dopant implant in the active area forming the other one of the anode and the cathode of the avalanche photodiode, wherein at least one of the first and second dopant implants defines a discontinuous formation having at least one interruption.

Abstract: A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads; a first node of each output load is common to one of the photosensitive elements and the corresponding quench element; and a third electrode provides an output signal from the photosensitive elements; the third electrode is coupled to a second node of the respective output loads; the outputs loads fully or partially correct an overshoot of the output signal on the third electrode.

Abstract: A LiDAR apparatus comprising a laser source for emitting laser pulses. An SiPM detector is provided for detecting reflected photons. Optics and an aperture stop is provide. The aperture stop is provided intermediate the SiPM detector and the optics for limiting an angle of view of the SiPM detector.

Abstract: A LiDAR apparatus is described. The apparatus comprises an eye safe laser source for emitting laser pulses. An SiPM detector is provided for detected reflected photons; and optics are also provided. The eye-safe laser source is configured such that the emitted laser pulses have a width which are selectively matched to a desired range accuracy.

Abstract: A LiDAR apparatus is described. The apparatus comprises an eye safe laser source for emitting laser pulses. An SiPM detector is provided for detected reflected photons; and optics are also provided. The eye-safe laser source is configured such that the emitted laser pulses have a width which are selectively matched to a desired range accuracy.

Abstract: A histogramming readout circuit is described. The readout circuit comprises a time to digital converter (TDC) configured to continually report time-stamps defining an arrival time of a laser clock and a signal output from a photosensor. Memory is provided for storing TDC events. A programmable processor is configured to implement a state machine. The state machine being operable to saves a time-stamp when a TDC event is detected; determine the time of flight of each of the photons detected by the photosensor; using each calculated time of flight to address a memory location; building up a histogram of the TDC data values using the memory locations as time-bins; maintaining a pointer to a maximum memory location where the highest number of TDC event resides. A calculator is operable to read the value of the maximum memory location and one or more adjacent time-bins either side for processing.

Abstract: A LiDAR apparatus comprising a laser source for emitting laser pulses. An SiPM detector is provided for detecting reflected photons. Optics and an aperture stop is provide. The aperture stop is provided intermediate the SiPM detector and the optics for limiting an angle of view of the SiPM detector.

Abstract: Silicon photomultiplier circuitry is provided that comprises at least one silicon photomultiplier pixel, each pixel comprising a plurality of silicon photomultiplier microcells. The silicon photomultiplier circuitry comprises control circuitry adapted to maintain a substantially constant voltage on a connection node between microcells of the pixel. The control circuitry is adapted to minimise the onset and recovery time of an output signal by maintaining a substantially constant voltage on the connection node.

Abstract: A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads each having a capacitive load operably coupled to a resisitive load in a parallel configuration between first and second nodes; each first node is common to one of the photosensitive elements and the corresponding quench element; and a third electrode coupled to the second nodes of the output loads to provide an output signal from the photosensitive elements. The outputs loads fully or partially correct an overshoot of an output signal on the third electrode.

Abstract: Silicon photomultiplier circuitry is provided that comprises at least one silicon photomultiplier pixel, each pixel comprising a plurality of silicon photomultiplier microcells. The silicon photomultiplier circuitry comprises control circuitry adapted to maintain a substantially constant voltage on a connection node between microcells of the pixel. The control circuitry is adapted to minimize the onset and recovery time of an output signal by maintaining a substantially constant voltage on the connection node.

Abstract: A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads each having a capacitive load operably coupled to a resisitive load in a parallel configuration between first and second nodes; each first node is common to one of the photosensitive elements and the corresponding quench element; and a third electrode coupled to the second nodes of the output loads to provide an output signal from the photosensitive elements. The outputs loads fully or partially correct an overshoot of an output signal on the third electrode.

Abstract: The present disclosure relates to a semiconductor photomultiplier comprising a substrate; an array of photosensitive cells formed on the substrate that are operably coupled between an anode and a cathode. A set of primary bus lines are provided each being associated with a corresponding set of photosensitive cells. A secondary bus line is coupled to the set of primary bus lines. An electrical conductor is provided having a plurality of connection sites coupled to respective connection locations on the secondary bus line for providing conduction paths which have lower impedance than the secondary bus line.

Abstract: The present disclosure relates to a semiconductor photomultiplier comprising a substrate; an array of photosensitive cells formed on the substrate that are operably coupled between an anode and a cathode. A set of primary bus lines are provided each being associated with a corresponding set of photosensitive cells. A secondary bus line is coupled to the set of primary bus lines. An electrical conductor is provided having a plurality of connection sites coupled to respective connection locations on the secondary bus line for providing conduction paths which have lower impedance than the secondary bus line.

Abstract: The present disclosure relates to a semiconductor photomultiplier comprising a a substrate; an array of photosensitive elements formed on a first major surface of the substrate; a plurality of primary bus lines interconnecting the photosensitive elements; at least one segmented secondary bus line provided on a second major surface of the substrate which is operably coupled to one or more terminals; and multiple vertical interconnect access (via) extending through the substrate operably coupling the primary bus lines to the at least one segmented secondary bus line.

Abstract: The present disclosure relates to photon detectors. In particular, the present disclosure relates to high sensitivity photon detectors such as semiconductor photomultipliers. A semiconductor photomultiplier is described which comprises an array of interconnected photosensitive microcells; and at least one dark count rate (DCR) suppression element associated with the array.

Abstract: The present disclosure relates to a semiconductor photomultiplier comprising a a substrate; an array of photosensitive elements formed on a first major surface of the substrate; a plurality of primary bus lines interconnecting the photosensitive elements; at least one segmented secondary bus line provided on a second major surface of the substrate which is operably coupled to one or more terminals; and multiple vertical interconnect access (via) extending through the substrate operably coulping the primary bus lines to the at least one segmented secondary bus line.

Abstract: The present disclosure relates to a semiconductor photomultiplier comprising a substrate; an array of photosensitive cells formed on the substrate that are operably coupled between an anode and a cathode. A set of primary bus lines are provided each being associated with a corresponding set of photosensitive cells. A secondary bus line is coupled to the set of primary bus lines. An electrical conductor is provided having a plurality of connection sites coupled to respective connection locations on the secondary bus line for providing conduction paths which have lower impedance than the secondary bus line.

Abstract: The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active region; and implanting a dopant through the insulating layer to form a photosensitive diode in the active region. The insulating layer once formed is retained over the active region throughout the manufacturing process.

Abstract: The present disclosure relates to photon detectors. In particular, the present disclosure relates to high sensitivity photon detectors such as semiconductor photomultipliers. A semiconductor photomultiplier is described which comprises an array of interconnected photosensitive microcells; and at least one dark count rate (DCR) suppression element associated with the array.

Abstract: A pixellated scintillator readout arrangement is presented, the arrangement comprising a plurality of scintillator pixels arranged in a scintillator array, and a plurality of photodetectors arranged to receive light from, or address, the scintillator pixels. The photodetectors may be arranged on both a first side and a second side of the scintillator array. Each photodetector may be arranged to leave a gap adjacent to the scintillator pixel which is addressed by that photodetector. Non-photosensitive elements such as tracking and bondpads may be arranged in at least some of the gaps. Electronic components such as electronic amplifiers may be arranged in at least some of the gaps. The photodetectors may be arranged in linear arrays addressing alternate lines of scintillator pixels on either side of the scintillator array. Each photodetector may be arranged to address a single pixel (as illustrated) or more than one pixel (not shown).