Abstract: New futuristic silent or loud 3D computer mice and key board design for a mice and keyboard less computer is presented. The current invention uses the fact that each word spoken by humans has a distinctive three dimensional pattern of the mouth and face and unique infrared spectrum. Using this fact, the present invention presents a method where the facial expression, irradiated by an array of infrared diodes, of the spoken word is picked up by infrared sensors installed either in stand alone mode, on top of the computer display or directly into the computer display to translate any spoken word silent or loud into computer commands that will facilitate the interaction of humans and computers without the use of a keyboard or mouse.

Abstract: New design for an infrared virtual, invisible computer keyboard and mouse for a mice and keyboard less computer is presented. The current invention uses the fact that the infrared spectrum of human fingers can be changed when irradiated with low power diodes. Using this fact, the present invention presents a method where a human finger's infrared spectrum, irradiated by an array of infrared diodes, is picked up by infrared sensors installed either in stand alone mode, on top of the computer display or directly into the computer display. The computer then uses the finger infrared spectrums picked by the infrared sensors to created virtual, invisible mouse and keyboard where words can drawn in the air and mouse commands are also given by moving the finger in different directions in the air.

Abstract: A photoresist exposure process is disclosed which produces features which are substantially smaller than the aperture dimension of the mask used to make the feature. The smaller feature size results from a double exposure of the photoresist, combined with a double baking process to create the features in the photoresist. The double baking process thins the layer of photoresist, prior to the second exposure, thereby improving the resolution of the mark created by the second exposure on the photoresist. The process also uses a binary bias mask through which the first exposure is made, which overlaps with the area of the second exposure, to allow a process tolerance for the realignment of the mask over the wafer for the second exposure.

Abstract: A photoresist layer is exposed two or more times. At least one exposure is conducted through a regular mask, and at least one exposure through a modified mask with a clear region overlapping the position of a non-clear region of the first mask. The radiation dose used with the modified mask is insufficient by itself to create a resist pattern on the substrate. The exposure through the modified mask alleviates the resist underexposure in concave corners of the opaque pattern of the regular mask. Instead of the modified mask, an exposure without a mask can be performed.

Abstract: A photoresist layer is exposed two or more times. One exposure is conducted through a regular mask, and one exposure through a modified mask with a non-clear region extending beyond a convex boundary of the non-clear region of the regular mask. The exposure through the modified mask allows one to reduce the exposure dose used with the regular mask, and thus alleviates the resist overexposure near convex areas of the non-clear pattern of the regular mask. Other embodiments are also provided.

Abstract: A photoresist exposure process is disclosed which produces features which are substantially smaller than the aperture dimension of the mask used to make the feature. The smaller feature size results from a double exposure of the photoresist, combined with a double baking process to create the features in the photoresist. The double baking process thins the layer of photoresist, prior to the second exposure, thereby improving the resolution of the mark created by the second exposure on the photoresist. The process also uses a binary bias mask through which the first exposure is made, which overlaps with the area of the second exposure, to allow a process tolerance for the realignment of the mask over the wafer for the second exposure.

Abstract: A photoresist layer is exposed two or more times. One exposure is conducted through a regular mask, and one exposure through a modified mask with a non-clear region extending beyond a convex boundary of the non-clear region of the regular mask. The exposure through the modified mask allows one to reduce the exposure dose used with the regular mask, and thus alleviates the resist overexposure near convex areas of the non-clear pattern of the regular mask. Other embodiments are also provided.

Abstract: A photoresist layer is exposed two or more times. At least one exposure is conducted through a regular mask, and at least one exposure through a modified mask with a clear region overlapping the position of a non-clear region of the first mask. The radiation dose used with the modified mask is insufficient by itself to create a resist pattern on the substrate. The exposure through the modified mask alleviates the resist underexposure in concave corners of the opaque pattern of the regular mask. Instead of the modified mask, an exposure without a mask can be performed.