Patents by Inventor John Changala

John Changala has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • WAFER METROLOGY TECHNOLOGIES
    Publication number: 20250155486
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Application
    Filed: January 15, 2025
    Publication date: May 15, 2025
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • Wafer metrology technologies
    Patent number: 12241924
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Grant
    Filed: February 8, 2022
    Date of Patent: March 4, 2025
    Assignee: FemtoMetrix, Inc.
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • Pump and probe type second harmonic generation metrology
    Patent number: 11821911
    Abstract: Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.
    Type: Grant
    Filed: September 27, 2021
    Date of Patent: November 21, 2023
    Assignee: FemtoMetrix, Inc.
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • WAFER METROLOGY TECHNOLOGIES
    Publication number: 20220413029
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Application
    Filed: February 8, 2022
    Publication date: December 29, 2022
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • PUMP AND PROBE TYPE SECOND HARMONIC GENERATION METROLOGY
    Publication number: 20220260626
    Abstract: Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.
    Type: Application
    Filed: September 27, 2021
    Publication date: August 18, 2022
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • Field-biased second harmonic generation metrology
    Patent number: 11415617
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: August 16, 2022
    Assignee: FemtoMetrix, Inc.
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • Wafer metrology technologies
    Patent number: 11293965
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Grant
    Filed: January 27, 2020
    Date of Patent: April 5, 2022
    Assignee: FemtoMetrix, Inc.
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • Pump and probe type second harmonic generation metrology
    Patent number: 11150287
    Abstract: Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: October 19, 2021
    Assignee: FemtoMetrix, Inc.
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • Field-biased second harmonic generation metrology
    Patent number: 11092637
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: August 17, 2021
    Assignee: FemtoMetrix, Inc.
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • PUMP AND PROBE TYPE SECOND HARMONIC GENERATION METROLOGY
    Publication number: 20210055338
    Abstract: Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.
    Type: Application
    Filed: April 6, 2020
    Publication date: February 25, 2021
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • WAFER METROLOGY TECHNOLOGIES
    Publication number: 20200400732
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Application
    Filed: January 27, 2020
    Publication date: December 24, 2020
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • FIELD-BIASED SECOND HARMONIC GENERATION METROLOGY
    Publication number: 20200348348
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Application
    Filed: December 4, 2019
    Publication date: November 5, 2020
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • Field-biased second harmonic generation metrology
    Patent number: 10663504
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: May 26, 2020
    Assignee: FemtoMetrix, Inc.
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • Pump and probe type second harmonic generation metrology
    Patent number: 10613131
    Abstract: Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: April 7, 2020
    Assignee: FemtoMetrix, Inc.
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • Wafer metrology technologies
    Patent number: 10591525
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: March 17, 2020
    Assignee: FemtoMetrix, Inc.
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • PUMP AND PROBE TYPE SECOND HARMONIC GENERATION METROLOGY
    Publication number: 20180299497
    Abstract: Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.
    Type: Application
    Filed: January 29, 2018
    Publication date: October 18, 2018
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • CHARGE DECAY MEASUREMENT SYSTEMS AND METHODS
    Publication number: 20180292441
    Abstract: Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Application
    Filed: January 25, 2018
    Publication date: October 11, 2018
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • WAFER METROLOGY TECHNOLOGIES
    Publication number: 20180217193
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Application
    Filed: November 7, 2017
    Publication date: August 2, 2018
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • FIELD-BIASED SECOND HARMONIC GENERATION METROLOGY
    Publication number: 20180217192
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Application
    Filed: October 31, 2017
    Publication date: August 2, 2018
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala
  • WAFER METROLOGY TECHONOLOGIES
    Publication number: 20150330909
    Abstract: Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
    Type: Application
    Filed: April 17, 2015
    Publication date: November 19, 2015
    Inventors: Viktor Koldiaev, Marc Kryger, John Changala