Abstract: A method for forming a capacitor includes forming a dielectric layer over a substrate. A conductive layer is formed over the dielectric layer. Dopants are implanted through at least one of the dielectric layer and the conductive layer after forming the dielectric layer so as to form a conductive region under the dielectric layer, wherein the conductive layer is a top electrode of the capacitor and the conductive region is a bottom electrode of the capacitor.

Abstract: A method for forming a capacitor includes forming a dielectric layer over a substrate. A conductive layer is formed over the dielectric layer. Dopants are implanted through at least one of the dielectric layer and the conductive layer after forming the dielectric layer so as to form a conductive region under the dielectric layer, wherein the conductive layer is a top electrode of the capacitor and the conductive region is a bottom electrode of the capacitor.

Abstract: A method and system is disclosed for directing charged particles on predetermined areas on a target semiconductor substrate. After aligning a wafer mask with a semiconductor wafer, with the wafer mask having one or more mask patterns thereon, the charged particles are directed to pass through the mask patterns to land on one or more selected areas on the semiconductor wafer.

Abstract: A method and system is disclosed for directing charged particles on predetermined areas on a target semiconductor substrate. After aligning a wafer mask with a semiconductor wafer, with the wafer mask having one or more mask patterns thereon, the charged particles are directed to pass through the mask patterns to land on one or more selected areas on the semiconductor wafer.

Abstract: Disclosed is a semiconductor radio frequency (RF) device having a shielding structure for minimizing coupling between RF passive components and conductive routing for active components. In one example, the device includes at least one shielding layer formed between the RF passive components and conductive routing. The shielding layer includes at least one opening. In another example, a second shielding layer may be used. The second shielding layer may also have an opening, and the openings in the first and second shielding layers may be offset from one another. The first and second shielding layers may be connected to each other through a guard ring, and may also be connected to a common voltage potential.

Abstract: Disclosed is a semiconductor radio frequency (RF) device having a shielding structure for minimizing coupling between RF passive components and conductive routing for active components. In one example, the device includes at least one shielding layer formed between the RF passive components and conductive routing. The shielding layer includes at least one opening. In another example, a second shielding layer may be used. The second shielding layer may also have an opening, and the openings in the first and second shielding layers may be offset from one another. The first and second shielding layers may be connected to each other through a guard ring, and may also be connected to a common voltage potential.