Abstract: An extreme ultraviolet (EUV) substrate inspection system and method of manufacturing thereof, includes: an EUV source directing EUV illumination through an aperture; a light detector detecting mask illumination with reduced off axis rays reflected off from a substrate; and a computing device processing image data detected by the light detector.

Abstract: An extreme ultraviolet (EUV) substrate inspection system and method of manufacturing thereof, includes: an EUV source directing EUV illumination through an aperture; a light detector detecting mask illumination with reduced off axis rays reflected off from a substrate; and a computing device processing image data detected by the light detector.

Abstract: A wire saw for cutting hard materials includes a carbon nanotube fiber wire spun from carbon nanotubes. The carbon nanotube fiber wire may be made from a plurality of fibers, each fiber being spun from carbon nanotubes, the fibers being twisted together to form the wire. Furthermore, the wire may also include diamond particles, silicon carbide particles and/or extra carbon nanotubes to enhance the abrasive properties of the wire. A method is provided for slicing a silicon boule including: linearly translating a carbon nanotube fiber wire between rotating drums while maintaining the wire under tension; using a fixture, moving the silicon boule onto the moving tensioned wire, whereby the wire cuts into the silicon; delivering lubricating fluid to the surface of the silicon where contact is made with the wire; and collecting the lubricating fluid after it leaves the surface of the silicon.

Abstract: The method of the invention involves depositing a plurality of thin layers of film, each layer having a thickness ranging from about 500Å to about 2000Å. Low Pressure Chemical Vapor Deposition or other techniques known in the art maybe used to deposit each thin layer of film. The film is polysilicon or silicon-germanium, where the germanium content ranges from about 4% by weight to about 20% by weight germanium. A Rapid Thermal Anneal (“RTA”) is performed on a deposited thin film layer to relieve residual film stress in at least that film layer. The use of RTA rather than furnace annealing permits much shorter annealing times. Optionally, but advantageously, hydrogen may be present during RTA to permit the use of lower processing temperatures, typically about 20% lower relative to a customary anneal. A series of film deposition/rapid thermal anneal cycles is used to produce the desired, nominal total thickness polysilicon film.