Abstract: Embodiments of the present invention provide systems and method for adaptively generating a pattern for fabricating semiconductor devices, the method comprising obtaining image data of a surface, and dynamically modifying a pattern to be applied to the surface based on the obtained image data.

Abstract: Various methods and apparatus relating to a multi-level layer (140, 440, 540, 640, 740) are disclosed.

Abstract: A dual-sided display includes outer layers switchable between a transparent state and an opaque state and inner layers disposed between the outer layers and switchable between the transparent state and a colored state.

Abstract: Spooling apparatus. The apparatus includes an interposer film having a spacer surface and a back surface; a first spacer carried by the interposer film on the spacer surface adjacent a first edge of the interposer film; a second spacer carried by the interposer film on the spacer surface adjacent a second edge of the interposer film, the spacers defining a process-film protective space; and a rotatable core oriented to receive an initial end of the interposer film and to roll up the interposer film with a process film in the process-film protective space with a passive surface of the process film adjacent a surface of the interposer film.

Abstract: A light modulation layer of a full-color reflective display (112), the light modulation layer including an addressing layer (404); a mirror (406) positioned above the addressing layer (404), the mirror (406) configured to reflect light of a predetermined wavelength band; and an electro-optic layer (416) positioned above the mirror (406), the electro-optic layer (416) configured to absorb light of a predetermined wavelength band in response to a signal received from a switching device (204) of the addressing layer (404).

Abstract: Embodiments of the present invention provide methods of fabricating features of a semiconductor device array, the method including patterning a dielectric layer deposited on a conductive carrier, wherein patterning comprises forming a trench pattern defining at least one device contact, electrodepositing metal into the patterned trenches, transferring the dielectric layer and the electrodeposited metal to a substrate and removing the conductive carrier, and the method further comprising lithographically fabricating one or more further features of the semiconductor device array overlying the dielectric layer and electrodeposited metal.

Abstract: Embodiments of the present invention provide systems and method for adaptively generating a pattern for fabricating semiconductor devices, the method comprising obtaining image data of a surface, and dynamically modifying a pattern to be applied to the surface based on the obtained image data.

Abstract: A method of making a conductive interconnect structure includes the steps of: electrodepositing a metal on a conductive surface (4) of a carrier (2) to form a first elongate conductive interconnect (12); and electrodepositing a dielectric material (14) on said conductive interconnect (12) while the conductive interconnect (12) is in contact with the conductive surface (4).

Abstract: A method of manufacturing a cell wall assembly for an electro-optic display device with greyscale capability comprises: forming on a substantially planar surface of a transfer carrier, at least one dielectric structure; forming on said at least one dielectric structure at least one electrode structure; wherein said dielectric structure extends in a direction perpendicular to said surface by a distance which varies substantially within the area of the or each electrode structure; adhering said at least one electrode structure to a major surface of a substrate of glass or a plastics material; and removing the transfer carrier. Other aspects of the invention include the cell wall assembly, a device with greyscale capability, a method of manufacturing the device, and the transfer carrier.

Abstract: A transistor device having a metallic source electrode, a metallic drain electrode, a metallic gate electrode and a channel in a deposited semiconductor material, the transistor device comprising: a first layer comprising the metallic gate electrode, a first metal portion of the metallic source electrode and a first metal portion of the metallic drain electrode; a second layer comprising a second metal portion of the metallic source electrode, a second metal portion of the metallic drain electrode, the deposited semiconductor material and dielectric material between the semiconductor material and the metallic gate electrode; and a third layer comprising a substrate, wherein the first, second and third layers are arranged in order such that the second layer is positioned between the first layer and the third layer.

Abstract: A method for forming a high aspect ratio microstructure (20) comprises: a) forming on a conductive surface (4) of a carrier substrate (3) one or more dielectric structures (6) to create a mandrel (7); b) forming masking material (8) by electrodepositing on exposed areas of the conductive surface of the mandrel one or more metal structures; c) forming a composite structure (18) by taking a photopolymer structure comprising a substrate (12) having thereon an electromagnetic radiation-sensitive photopolymer of either a positive tone or a negative tone (14), the photopolymer having a thickness substantially equal to the desired height of the microstructure to be formed, and adhering the photopolymer to the masking material (8), wherein the masking material is opaque to the electromagnetic radiation; d) removing the carrier (3); e) exposing the photopolymer (14) to electromagnetic radiation so as to irradiate regions of the photopolymer corresponding to the one or more dielectric structures (6) and substantially

Abstract: A light modulation layer of a full-color reflective display (112), the light modulation layer including an addressing layer (404); a mirror (406) positioned above the addressing layer (404), the mirror (406) configured to reflect light of a predetermined wavelength band; and an electro-optic layer (416) positioned above the mirror (406), the electro-optic layer (416) configured to absorb light of a predetermined wavelength band in response to a signal received from a switching device (204) of the addressing layer (404).

Abstract: A crossover is formed by imprinting a channel, by depositing a first conductor in the channel, by anodizing a surface of the first conductor and by electroforming a second conductor across the first conductor.

Abstract: A method of manufacturing a composite stamp (24) for embossing comprises the steps of: (a) taking a master structure (10) having a conductive surface (16) and dielectric features (18) thereon; (b) depositing an opaque material on exposed regions of the conductive surface (16) to form an opaque mask (20); (c) coating the dielectric features (18) and opaque mask (20) with a fluid material (4) which is capable of being transformed to a form-retaining material; (d) causing or permitting the fluid material (4) to be transformed to a form-retaining material which is bonded to the opaque mask (20); and (e) removing the form-retaining material (4) and bonded opaque mask (20) from the master structure (10) to provide the composite stamp (24). Other aspect of the invention provide a composite stamp (24) and a composite structure (22) for making the composite stamp.

Abstract: A method of applying to a display substrate color elements and addressing busbars in a defined alignment relative to each other includes: forming said color elements and said busbars on a surface of a transfer carrier; 10 adhering said color elements and said busbars to said display substrate; and removing said transfer carrier.

Abstract: A method for forming a high aspect ratio microstructure (20) comprises: a) forming on a conductive surface (4) of a carrier substrate (3) one or more dielectric structures (6) to create a mandrel (7); b) forming masking material (8) by electrodepositing on exposed areas of the conductive surface of the mandrel one or more metal structures; c) forming a composite structure (18) by taking a photopolymer structure comprising a substrate (12) having thereon an electromagnetic radiation-sensitive photopolymer of either a positive tone or a negative tone (14), the photopolymer having a thickness substantially equal to the desired height of the microstructure to be formed, and adhering the photopolymer to the masking material (8), wherein the masking material is opaque to the electromagnetic radiation; d) removing the carrier (3); e) exposing the photopolymer (14) to electromagnetic radiation so as to irradiate regions of the photopolymer corresponding to the one or more dielectric structures (6) and substantially

Abstract: A laminated article comprises a first substrate and a second substrate at least one of which is flexible, the substrates being spaced apart from each other by spacing means and enclosing a layer of a fluid material. At least some of the spacing means comprise wall structures enclosing an adhesive material which adheres the substrates together. Fluid material which is outside the wall structures is isolated from the adhesive material and any fluid material within the wall structures. Another aspect of the invention provides a method of manufacturing the article.

Abstract: A cross-over (140); of first (142) and second (144) separate elongate conductive interconnects, comprising: a first elongate conductive interconnect (142); a first conductive portion (110a) separate from the first elongate conductive interconnect (142); a second conductive portion (110b) separate from the first elongate conductive interconnect (142); first insulating material (122) adjacent at least a portion (111) of the first elongate conductive interconnect (142); and a third electro-deposited metal portion (124) extending adjacent the first insulating material (122) to interconnect the first (110a) and second (110b) conductive portions, wherein the first (110a), second (110b) and third (124) portions are interconnected portions of the second elongate conductive interconnect (144); and a substrate, wherein the first insulating material and the third electro-deposited metal portion are positioned between the substrate and the first elongate conductive interconnect.

Abstract: A crossover is formed by imprinting a channel, by depositing a first conductor in the channel, by anodizing a surface of the first conductor and by electroforming a second conductor across the first conductor.

Abstract: A color display device comprises: a first display substrate (13) and a second display substrate (18), said substrates being spaced apart and opposed to each other; a layer of an electro-optic material (27) between the substrates; a set of first electrodes (17a) on an inner surface of the first display substrate (13) and a set of second electrodes (17b) on an inner surface of the second display substrate (18), the first electrodes (17a) overlapping the second electrodes (17b) to define pixels for selectively applying an electric field across at least some of said electro-optic material; a set of first color filters (CY) on the first display substrate, each of said first electrodes being in register with one of said first color filters; and a set of second color filters (CM) on the second display substrate, each of said second electrodes being in register with one of said second color filters.