Abstract: Implant delivery devices, methods of device assembly and methods of using those devices are presented where the delivery device uses an automatic implant delivery mechanism that eliminates variability in pusher wire speeds by providing a needle assembly having one or more implants positioned within a proximal end of a needle cannula, a dampener assembly and a shuttle assembly located within a housing along with the activation member which holds the shuttle assembly in cocked or pre-tensioned state. A lock can be engaged with the activation member to prevent premature firing or triggering of the device.

Abstract: Implant delivery devices, methods of device assembly and methods of using those devices are presented where the delivery device uses an automatic implant delivery mechanism that eliminates variability in pusher wire speeds by providing a needle assembly having one or more implants positioned within a proximal end of a needle cannula, a dampener assembly and a shuttle assembly located within a housing along with the activation member which holds the shuttle assembly in cocked or pre-tensioned state. A lock can be engaged with the activation member to prevent premature firing or triggering of the device.

Abstract: A surgical collection assembly for filtering material from liquid obtained during surgery has a distal plunger plate that is used to compress collected material that is filtered from liquid and entrained materials gathered during surgery. The distal plunger plate needs to be maintained above the collection jar inlet during collection of the liquid and entrained material. This disclosure teaches several ways to reversibly retain the distal plunger plate above the collection jar inlet. Also taught is a drape clamp that can affix the assembly and related tubing to a drape.

Abstract: Embodiments of the innovation relate to a plow comprising a plow and a trip blade mechanism coupled to a plow body, the trip blade mechanism comprising a trip blade hingedly coupled to a base of the plow body and a blade return device coupled between the plow body and the trip blade. The plow comprises a back drag system coupled to the trip blade mechanism and configured to dispose the trip blade between a first plowing position relative to the plow body and a second back drag position relative to the plow body.

Abstract: A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

Abstract: A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

Abstract: A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

Abstract: A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)?0.3, and where the content is measured in atomic percent.

Abstract: A method including directing a first radiation at a first copper-indium-gallium (CIG) sputtering target in a reactive copper indium gallium selenide (CIGS) sputtering process, detecting a first reflected radiation from the first CIG target and determining the amount of selenium poisoning of the first CIG target based on the first reflected radiation.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: Methods, systems and computer readable media for removing trends in signal intensity values from features on a chemical array. Inputted signal values from features on the array are surface fitted to calculate a surface approximation. The surface approximation is normalized and used to de-trend the signal intensity values from the features.

Abstract: Methods, systems and computer readable media for facilitating analysis of feature extraction outputs across multiple extractions. A feature extraction output of an extraction resulting from feature extraction of an array is inputted, and global statistics and array processing parameters are extracted from the feature extraction output. A table/file is populated with the extracted global statistics and array processing parameters of the extraction. The inputting, extracting and populating steps are repeated for at least one additional feature extraction output of another extraction, so that the table/file includes global statistics that can be readily cross-compared over multiple extractions with reference to a single table or file. Methods, systems and computer readable media are provided for setting threshold values for metrics that global statistics are provided for. An evaluation metric may be set by a user, based upon the threshold values set for the metrics.

Abstract: Systems, methods and computer readable media for characterizing a chemical array. At least one metric indicative of accuracy of location of features on the chemical array by a feature extraction process used to extract signals from features of the chemical array may be generated, as well as additional metrics adapted to identify errors caused by a particular process used in generating the signals on the array. A quality control report may be generated to contain at least one metric indicative of accuracy of location and said at least one additional metric. Customized quality control reports may be generated by providing for user selection of at least one metric adapted to identify errors caused by a particular process used in generating signals on a chemical array, from plurality of metrics, and including such selections in the quality control report generated.