Abstract: The invention provides a compound of formula (0): or a pharmaceutically acceptable salt, N-oxide or tautomer thereof; wherein: n is 1 or 2; X is CH or N; Y is selected from CH and C—F; Z is selected from C—Rz and N; R1 is selected from: -(Alk1)t-Cyc1; wherein t is 0 or 1; Optionally substituted C1-6 acyclic hydrocarbon groups R2 is selected from hydrogen; halogen; and C1-3 hydrocarbon groups optionally substituted with one or more fluorine atoms; R3 is hydrogen or a group L1-R7; R4 is selected from hydrogen; methoxy; and optionally substituted C1-3 alkyl; and R4a is selected from hydrogen and a C1-3 alkyl group; wherein Rz, Alk1, Cyc1, L1 and R7 are defined herein; provided that the compound is other than 6-benzyl-3-{2-[(2-methylpyrimidin-4-yl)amino]pyridin-4-yl}-7,8-dihydro-1,6-naphthyridin-5(6H)-one and 3-{2-[(2-methylpyrimidin-4-yl)amino]pyridin-4-yl}-7,8-dihydro-1,6-naphthyridin-5(6H)-one and salts and tautomers thereof.

Abstract: A method is described for controlling a furnace containing a plurality of catalyst-containing tubes heated by a combustion gas generated by a plurality of burners, said method comprising the steps of: (i) measuring path-averaged combustion gas temperatures on multiple paths through the furnace using tunable diode laser absorption spectroscopy, (ii) periodically measuring temperatures of surfaces within the furnace to obtain periodic surface temperature information, (iii) entering the path-averaged combustion gas temperatures and periodic surface temperature information into a computer model of the furnace, said model comprising parameters for controlling the furnace; and (iv) using the computer model and the temperature information to obtain optimised parameters for controlling the furnace. A system for performing the method is also described.

Abstract: A method of recording images within a furnace using a thermal imaging camera comprising a bore scope connected to a digital camera unit is described, comprising the steps of: (a) inserting the borescope into the interior of the furnace, (b) collecting one of more images of the interior of the furnace using the thermal imaging camera with the borescope at a first position, and (c) moving the borescope from the first position to a second position and collecting one or more images of the interior of the furnace as the borescope is moved from the first position to the second position, wherein the borescope movement is guided by means of a guide device comprising a movable borescope mounting, mounted externally on the furnace.

Abstract: A photovoltaic module can include a high voltage photovoltaic laminate that include a plurality of high voltage photovoltaic cells with each of the high voltage photovoltaic cells including a plurality of sub-cells. A boost-less conversion device can be configured to convert a first voltage from the high voltage photovoltaic laminate to a second voltage.

Abstract: A photovoltaic module can include a high voltage photovoltaic laminate that include a plurality of high voltage photovoltaic cells with each of the high voltage photovoltaic cells including a plurality of sub-cells. A boost-less conversion device can be configured to convert a first voltage from the high voltage photovoltaic laminate to a second voltage.

Abstract: A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Abstract: Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Abstract: Solar cells having a plurality of sub-cells coupled by metallization structures, and singulation approaches to forming solar cells having a plurality of sub-cells coupled by metallization structures, are described. In an example, a solar cell, includes a plurality of sub-cells, each of the sub-cells having a singulated and physically separated semiconductor substrate portion. Adjacent ones of the singulated and physically separated semiconductor substrate portions have a groove there between. The solar cell also includes a monolithic metallization structure. A portion of the monolithic metallization structure couples ones of the plurality of sub-cells. The groove between adjacent ones of the singulated and physically separated semiconductor substrate portions exposes a portion of the monolithic metallization structure.

Abstract: A method of recording images within a furnace using a thermal imaging camera comprising a bore scope connected to a digital camera unit is described, comprising the steps of: (a) inserting the borescope into the interior of the furnace, (b) collecting one of more images of the interior of the furnace using the thermal imaging camera with the borescope at a first position, and (c) moving the borescope from the first position to a second position and collecting one or more images of the interior of the furnace as the borescope is moved from the first position to the second position, wherein the borescope movement is guided by means of a guide device comprising a movable borescope mounting, mounted externally on the furnace.

Abstract: A method is described for controlling a furnace containing a plurality of catalyst-containing tubes heated by a combustion gas generated by a plurality of burners, said method comprising the steps of: (i) measuring path-averaged combustion gas temperatures on multiple paths through the furnace using tunable diode laser absorption spectroscopy, (ii) periodically measuring temperatures of surfaces within the furnace to obtain periodic surface temperature information, (iii) entering the path-averaged combustion gas temperatures and periodic surface temperature information into a computer model of the furnace, said model comprising parameters for controlling the furnace; and (iv) using the computer model and the temperature information to obtain optimised parameters for controlling the furnace. A system for performing the method is also described.

Abstract: The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Abstract: Voltage breakdown devices for solar cells are described. For example, a solar cell includes a semiconductor substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A plurality of conductive contacts is coupled to the plurality of alternating N-type and P-type semiconductor regions. A voltage breakdown device is disposed above the substrate. The voltage breakdown device includes one of the plurality of conductive contacts in electrical contact with one of the N-type semiconductor regions and with one of the P-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate.

Abstract: The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Abstract: In one embodiment, a solar cell has base and emitter diffusion regions formed on the back side. The emitter diffusion region is configured to collect minority charge carriers in the solar cell, while the base diffusion region is configured to collect majority charge carriers. The emitter diffusion region may be a continuous region separating the base diffusion regions. Each of the base diffusion regions may have a reduced area to decrease minority charge carrier recombination losses without substantially increasing series resistance losses due to lateral flow of majority charge carriers. Each of the base diffusion regions may have a dot shape, for example.

Abstract: A process is described for increasing the hydrogen content of a synthesis gas mixture comprising hydrogen, carbon oxides and steam, comprising the steps of: passing the synthesis gas mixture at an inlet temperature in the range 170-500° C. over a water-gas shift catalyst to form a hydrogen-enriched shifted gas mixture, wherein the water-gas shift catalyst is in the form of a cylindrical pellet having a length C and diameter D, wherein the surface of the cylindrical pellet has two or more flutes running along its length, said cylinder having no through-holes and domed ends of lengths A and B such that (A+B+C)/D is in the range 0.25 to 0.25, and (A+B)/C is in the range 0.03 to 0.30.

Abstract: Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.

Abstract: A sintered pelletized catalyst precursor comprising iron oxides, including haematite, and Cr2O3 and optionally one or more of Al2O3, ZnO, MnO2, MgO, and/or CuO, the pelletized catalyst precursor having an iron oxide content of 60 wt % to 95 wt %, when expressed as Fe2O3, and a Cr(VI) content of less than 0.1 wt %, is physically stable on ignition or when subjected to a reducing gas sufficient to reduce the haematite to magnetite.

Abstract: A catalyst precursor, suitable for use after reduction as a water-gas shift catalyst, is described, which is in the form of a pellet comprising one or more oxides of iron, wherein the catalyst precursor has a pore volume 0.30 cm3/g and an average pore size in the range 60 to 140 nm The precursor may be prepared by calcination of precipitated iron compounds at temperatures in the range 400-700° C.

Abstract: Solar cells having a plurality of sub-cells coupled by metallization structures, and singulation approaches to forming solar cells having a plurality of sub-cells coupled by metallization structures, are described. In an example, a solar cell, includes a plurality of sub-cells, each of the sub-cells having a singulated and physically separated semiconductor substrate portion. Adjacent ones of the singulated and physically separated semiconductor substrate portions have a groove there between. The solar cell also includes a monolithic metallization structure. A portion of the monolithic metallization structure couples ones of the plurality of sub-cells. The groove between adjacent ones of the singulated and physically separated semiconductor substrate portions exposes a portion of the monolithic metallization structure.

Abstract: A process is described for removing halogen compounds, particularly chlorine compounds, from a process fluid, comprising the steps of (i) passing a process fluid containing hydrogen halide over a first sorbent to remove hydrogen halide and generate a hydrogen halide depleted process fluid and then, (ii) passing the hydrogen halide depleted process fluid over a second different sorbent to remove organic halide compounds therefrom. A purification system suitable for removing hydrogen halide and organic halide compounds from process fluids is also described.