Patents by Inventor John D. Barry

John D. Barry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8054450
    Abstract: A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.
    Type: Grant
    Filed: May 2, 2008
    Date of Patent: November 8, 2011
    Assignee: University of Maryland
    Inventors: Martin C. Peckerar, Mario Dagenais, Birendra Dutt, John D. Barry, Michael D. Messina, Jr., Yves Ngu
  • Patent number: 8052908
    Abstract: A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.
    Type: Grant
    Filed: May 2, 2008
    Date of Patent: November 8, 2011
    Assignee: University of Maryland
    Inventors: Martin C. Peckerar, Mario Dagenais, Birendra Dutt, John D. Barry, Michael D. Messina, Jr., Yves Ngu
  • Publication number: 20090201475
    Abstract: A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.
    Type: Application
    Filed: May 2, 2008
    Publication date: August 13, 2009
    Inventors: MARTIN C. PECKERAR, MARIO DAGENAIS, BIRENDRA DUTT, JOHN D. BARRY, MICHAEL D. MESSINA, JR., YVES NGU
  • Publication number: 20090068570
    Abstract: A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.
    Type: Application
    Filed: May 2, 2008
    Publication date: March 12, 2009
    Inventors: MARTIN C. PECKERAR, MARIO DAGENAIS, BIRENDRA DUTT, JOHN D. BARRY, MICHAEL D. MESSINA, JR., YVES NGU
  • Patent number: 5593880
    Abstract: A nutritional medium for enabling the growth, maintenance and transport of cells in a container of virtually any size or shape, including a substantially flat, multi-well plastic plate. The nutritional medium is capable of assuming a substantially liquid state above a first temperature and a substantially solid state below a second temperature. Both the first and second temperatures are generally compatible with the survival of the cells in the container. The cells are covered with the medium while the medium is in a substantially liquid state, and the temperature of the medium is then reduced to a temperature at which the medium assumes a substantially solid state. The medium is maintained in a substantially solid state while the cells are transported. Upon arrival at the end user, the temperature of the medium is increased to a temperature at which the medium assumes a substantially liquid state. Following a change to fresh maintenance medium, the cells in the container are ready for immediate use.
    Type: Grant
    Filed: February 10, 1994
    Date of Patent: January 14, 1997
    Assignee: Viratest International, Inc.
    Inventors: William J. Northam, John D. Barry, Richard L. Heberling
  • Patent number: 4189992
    Abstract: A bread baking system in which dough is automatically punched down, the rise times of the dough timed, and the oven turned on and off at the proper times.
    Type: Grant
    Filed: January 15, 1979
    Date of Patent: February 26, 1980
    Inventor: John D. A. Barry