Patents by Inventor John D. Bazzano

John D. Bazzano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12713116
    Abstract: A silicon-based image sensor can have i) a pixel array with one or more pixels and ii) an upconversion layer of crystals on at least one of a front side and a backside of the silicon-based image sensor. A pulse repetition frequency decoder cooperates with the upconversion layer of crystals to decode a pulse repetition frequency of a laser flash captured by one or more of the pixels of the silicon-based image sensor. The pulse repetition frequency decoder can use a known frame rate of the silicon-based image sensor and a decay time of an upconverting emission from the upconversion layer of crystals to decode the pulse repetition frequency of the laser flash.
    Type: Grant
    Filed: August 12, 2024
    Date of Patent: August 18, 2026
    Assignee: SRI International
    Inventors: Peter A. Levine, Rui Zhu, Namwoong Paik, John D. Bazzano
  • Publication number: 20250198835
    Abstract: A silicon-based image sensor has an upconversion layer of crystals. The silicon-based image sensor receives light from a common beam splitter with a second image sensor. An optical band pass filter cooperates with the common beam splitter to pass some of the light to be incident on the upconversion layer of crystals in a second range of wavelengths, which will be absorbed and converted by the upconversion layer of crystals into a third range of wavelengths, and then the third range of wavelengths is transmitted onto the pixels in the silicon-based image sensor. A pulse repetition frequency decoder cooperates with the upconversion layer of crystals to decode a pulse repetition frequency of a laser flash in the second range of wavelengths passed by the optical band pass filter and subsequently upconverted by the upconversion layer of crystals and then captured by the pixels of the silicon-based image sensor.
    Type: Application
    Filed: December 17, 2024
    Publication date: June 19, 2025
    Inventors: Namwoong Paik, Peter A. Levine, John D. Bazzano
  • Publication number: 20250071397
    Abstract: A silicon-based image sensor can have i) a pixel array with one or more pixels and ii) an upconversion layer of crystals on at least one of a front side and a backside of the silicon-based image sensor. A pulse repetition frequency decoder cooperates with the upconversion layer of crystals to decode a pulse repetition frequency of a laser flash captured by one or more of the pixels of the silicon-based image sensor. The pulse repetition frequency decoder can use a known frame rate of the silicon-based image sensor and a decay time of an upconverting emission from the upconversion layer of crystals to decode the pulse repetition frequency of the laser flash.
    Type: Application
    Filed: August 12, 2024
    Publication date: February 27, 2025
    Inventors: Peter A. Levine, Rui Zhu, Namwoong Paik, John D. Bazzano