Abstract: Disclosed are apparatus and methods for the generation of a stage speed profile and/or the selection of care areas for automated wafer inspection. The stage speed profile generated corresponds to a fastest speed the inspection machine is able to inspect provided a set of care areas. The set of care areas selected correspond to specific regions on the wafer which are to be imaged in detail by the inspection machine. The apparatus and methods herein may also calculate speed of inspection and coverage (and possibly other characteristics of the inspection) for a quantity of cases, and select the best trade-off of coverage versus inspection time using a cost function. Other aspects, features, and embodiments of the invention are also disclosed.

Abstract: The present disclosure provides an electron beam column with substantially improved resolution and/or throughput for inspecting manufactured substrates. The electron beam column comprises an electron gun, a scanner, an objective lens, and a detector. In accordance with one embodiment, the electron gun includes a gun lens having a flip-up pole piece configuration. In accordance with another embodiment, the scanner comprises a dual scanner having a pre-scanner and a main scanner, and the detector may be configured between the electron gun and the pre-scanner. In accordance with another embodiment, the electron beam column includes a continuously-variable aperture configured to select a beam current. Other embodiments relate to methods of using an electron beam column for automated inspection of manufactured substrates. In one embodiment, for example, an aperture size is adjusted to achieve a minimum spot size given a selected beam current and a column-condition domain being used.

Abstract: One embodiment disclosed relates to a multiple-beamlet electron beam imaging apparatus for imaging a surface of a target substrate. A beam splitter lens array is configured to split the illumination beam to form a primary beamlet array, and a scanning system is configured to scan the primary beamlet array over an area of the surface of the target substrate. In addition, a detection system configured to detect individual secondary electron beamlets. Another embodiment disclosed relates to a method of imaging a surface of a target substrate using a multiple-beamlet electron beam column. Other features and embodiments are also disclosed.

Abstract: One embodiment disclosed relates to a multiple-beamlet electron beam imaging apparatus for imaging a surface of a target substrate. A beam splitter lens array is configured to split the illumination beam to form a primary beamlet array, and a scanning system is configured to scan the primary beamlet array over an area of the surface of the target substrate. In addition, a detection system configured to detect individual secondary electron beamlets. Another embodiment disclosed relates to a method of imaging a surface of a target substrate using a multiple-beamlet electron beam column. Other features and embodiments are also disclosed.

Abstract: Disclosed are apparatus and methods for the generation of a stage speed profile and/or the selection of care areas for automated wafer inspection. The stage speed profile generated corresponds to a fastest speed the inspection machine is able to inspect provided a set of care areas. The set of care areas selected correspond to specific regions on the wafer which are to be imaged in detail by the inspection machine. The apparatus and methods herein may also calculate speed of inspection and coverage (and possibly other characteristics of the inspection) for a quantity of cases, and select the best trade-off of coverage versus inspection time using a cost function. Other aspects, features, and embodiments of the invention are also disclosed.

Abstract: Disclosed are methods and apparatus for detecting a relatively wide dynamic range of intensity values from a beam (e.g., scattered light, reflected light, or secondary electrons) originating from a sample, such as a semiconductor wafer. In other words, the inspection system provides detected output signals having wide dynamic ranges. The detected output signals may then be analyzed to determine whether defects are present on the sample. For example, the intensity values from a target die are compared to the intensity values from a corresponding portion of a reference die, where a significant intensity difference may be defined as a defect. In a specific embodiment, an inspection system for detecting defects on a sample is disclosed. The system includes a beam generator for directing an incident beam towards a sample surface and a detector positioned to detect a detected beam originating from the sample surface in response to the incident beam.

Abstract: Disclosed are methods and apparatus for detecting a relatively wide dynamic range of intensity values from a beam (e.g., scattered light, reflected light, or secondary electrons) originating from a sample, such as a semiconductor wafer. In other words, the inspection system provides detected output signals having wide dynamic ranges. The detected output signals may then be analyzed to determine whether defects are present on the sample. For example, the intensity values from a target die are compared to the intensity values from a corresponding portion of a reference die, where a significant intensity difference may be defined as a defect. In a specific embodiment, an inspection system for detecting defects on a sample is disclosed. The system includes a beam generator for directing an incident beam towards a sample surface and a detector positioned to detect a detected beam originating from the sample surface in response to the incident beam.

Abstract: In each configuration, at least one TDI sensor is used to image substrate portions of interest, with those portions illuminated with substantially uniform illumination. In one configuration, a substrate is compared to prestored expected characteristic features. In a second configuration, first and second patterns in a region of the surface of at least one substrate are inspected by comparing one pattern against the other and noting whether they agree with each other. This is accomplished by illuminating the two patterns, imaging the first pattern and storing its characteristics in a temporary memory, then imaging the second pattern and comparing it to the stored characteristics from the temporary memory. Then the comparisons continue sequentially with the second pattern becoming the first pattern in the next imaging/comparison sequence against a new second pattern.

Abstract: In each configuration, at least one TDI sensor is used to image the portions of interest of the substrate that are substantially uniformly or critically illuminated. In one configuration, the substrate is compared to the expected characteristic features prestored in memory. In a second configuration, a first and second pattern in a region of at least one substrate are inspected by comparing one pattern against the other and noting whether they agree with each other. This is accomplished by illuminating the two patterns, imaging the first pattern and storing its characteristics in a temporary memory, then imaging the second pattern and comparing it to the stored characteristics from the temporary memory. Then the comparisons continue sequentially with the second pattern becoming the first pattern in the next imaging/comparison sequence against a new second pattern. With each comparison whether there has been agreement between the two patterns is noted.

Abstract: Substrate inspection apparatus and methods, and illumination apparatus. The inspection apparatus and method includes memory for storing the desired features of the surface of the substrate, focussed illuminator for substantially uniformly illuminating a region of the surface of the substrate to be inspected. Additionally there is a sensor for imaging the region of the substrate illuminated by the illuminator, and a comparator responsive to the memory and sensor for comparing the imaged region of the substrate with the stored desired features of the substrate. The illumination apparatus is designed to provide substantially uniform focussed illumination along a narrow linear region. This apparatus includes first, second and third reflectors elliptically cylindrical in shape, each with its long axis substantially parallel to the long axes of each of the others.

Abstract: Substrate inspection apparatus and methods, and illumination apparatus. The inspection apparatus and method includes memory for storing the desired features of the surface of the substrate, focussed illuminator for substantially uniformly illuminating a region of the surface of the substrate to be inspected. Additionally there is a sensor for imaging the region of the substrate illuminated by the illuminator, and a comparator responsive to the memory and sensor for comparing the imaged region of the substrate with the stored desired features of the substrate. The illumination apparatus is designed to provide substantially uniform focussed illumination along a narrow linear region. This apparatus includes first, second and third reflectors elliptically cylindrical in shape, each with its long axis substantially parallel to the long axes of each of the others.