Abstract: A PIN detector for use in the communications industry having increased linearity and increased maximum optical power detection levels without distortion is disclosed herein. To this end, a PIN structure having a high carrier mobility quaternary material cap layer and a ternary photosensitive layer is disclosed that overcomes the limitations of low mobility devices as described above. The quaternary materials have much greater carrier mobility than InP material and thereby a much shorter carrier transit time across these layers. This reduced carrier transit time effect results in a much more linear response and accordingly greatly reduced intermodulation distortion.

Abstract: A method for activating the zinc dopant in an active layer of a Group III/Group V semiconductor device comprises forming a layer of zinc doped Group III/Group IV material, and thereafter annealing the layer at a predetermined temperature and for a predetermined time sufficient to convert inactive zinc in the layer to acceptor zinc. In a preferred embodiment of the invention, a method for activating zinc dopant in the active layer of an InP-InGaAsP double heterostructure comprises annealing the active layer at a temperature of about 625.degree. C. for at least about 190 seconds which converts inactive zinc to acceptor zinc without substantially decreasing the total zinc in the active layer. In another preferred embodiment, a method for increasing the power output of InP-InGaAsP optoelectronic semiconductor device, such as a laser or an LED having a zinc doped active layer, comprises annealing the active layer of the semiconductor device at a temperature of about 625.degree. C. for at least about 190 seconds.

Abstract: An integrated semiconductor device comprising a light emitting portion and a light detecting portion is disclosed. The integrated semiconductor device comprises two multiple quantum well P-I-N structures formed on a single substrate, one of the P-I-N structures being forward biased to emit light and the other of the P-I-N structures being reverse biased to detect light. Because of the quantum confined Stark effect, the reversed biased P-I-N structures is highly absorbing to light emitted by the forward biased P-I-N structure. The integrated semiconductor device may be utilized to implement an optical feedback path for a receiver.