Abstract: This invention relates to a chemical vapor deposition process for forming Zr or Hf oxynitride films suitable for use in electronic applications such as gate dielectrics. The process comprises: a. delivering a Zr or Hf containing precursor in gaseous form to a chemical vapor deposition chamber, and, b. simultaneously delivering an oxygen source and a nitrogen source to the chamber separately, such that mixing of these sources with the precursor does not take place prior to delivery to the chamber, and, c. contacting the resultant reaction mixture with a substrate in said chamber, said substrate heated to an elevated temperature to effect deposition of the Zr or Hf oxynitride film, respectively. A silicon containing precursor may be added simultaneously to the chamber for forming Zr or Hf silicon oxynitride films.

Abstract: This invention relates to a chemical vapor deposition process for forming Zr or Hf oxynitride films suitable for use in electronic applications such as gate dielectrics.