Abstract: An exemplary embodiment of the invention is a method and system for managing a result returned from a translator co-processor to a recovery unit of a central processor. The computer system has a pipelined computer processor and a pipelined central processor, which executes an instruction set in a hardware controlled execution unit and executes an instruction set in a milli-mode architected state with a millicode sequence of instructions in the hardware controlled execution unit. The central processor initiates a request to the translator co-processor a cycle after decode of a perform translator operation instruction in the millicode sequence. The translator co-processor processes the perform translator operation instruction to generate a perform translator operation result. The translator co-processor returns the results to a recovery unit of the central processor. The recovery unit stores the perform translator operation result in a system register.

Abstract: High voltage integrated circuit field plates that are connected directly to the epitaxial pockets over which they lie, are formed simultaneously with high resistivity polysilicon resistors and are insulated from cross-over metal by a dual insulation of silicon dioxide and silicon nitride. Without adding to these process steps, MNS capacitors are formed that have a higher packing density than their MOS counterparts. The space saving MNS capacitors are thus space-wise and process-wise compatible with the polysilicon field plates that occupy much less chip real estate than do diffused channel stops.

Abstract: A Hall-cell of relatively high sensitivity and low power consumption is provided in an isolated epitaxial pocket of an integrated circuit. The epitaxial layer is of opposite conductivity type to that of the supporting silicon substrate. The Hall-cell body of opposite conductivity type consists of an ion-implanted surface portion of the pocket and may have a thickness that is limited by a buried layer of the same type as that of the substrate. This Hall-cell is capable of being manufactured with closely controlled electrical properties and by steps imposing few restraints on the quality of other components in the integrated circuit.