Patents by Inventor John D. Mottram

John D. Mottram has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Termination structure for a semiconductor device
    Publication number: 20030127702
    Abstract: A semiconductor device (e.g. MOSFET or IGBT) comprises active and termination regions (1,2) formed in a semiconductor substrate (4). The substrate (4) has an upper surface and a termination including a trench (12) extending into the substrate (4) from the upper surface within the termination region (1). Termination trench (12) is at least partly filled with an insulating material (13) which extends from the termination trench (12) to overlie adjacent regions of the device above the surface. A channel stop region (11) extends laterally from a side wall of the termination trench (12) into the substrate (4).
    Type: Application
    Filed: October 15, 2002
    Publication date: July 10, 2003
    Applicant: Zetex PIc
    Inventors: Peter H. Blair, Adrian Finney, Paul A. Gerrard, Andrew Wood, John D. Mottram