Abstract: Disclosed are methods, libraries, and samples for quantifying a target analyte in a laboratory sample including the target analyte. The methods typically include the step of estimating the amount of the target analyte in the laboratory sample from mass spectrometric data including signal intensities for the target analyte and one or more internal standards, where the mass spectrometric data are an output of a mass spectrometric analysis of a target sample produced from the laboratory sample and a predetermined amount of the one or more internal standards. The present disclosure also provides a method for analyte quantification. The method comprises adding one or more calibrators to a sample comprising one or more analytes; applying mass spectrometry (MS) to the sample; and using a trained machine learning model to determine an absolute concentration of the one or more analytes.

Abstract: Disclosed are methods, libraries, and samples for quantifying a target analyte in a laboratory sample including the target analyte. The methods typically include the step of estimating the amount of the target analyte in the laboratory sample from mass spectrometric data including signal intensities for the target analyte and one or more internal standards, where the mass spectrometric data are an output of a mass spectrometric analysis of a target sample produced from the laboratory sample and a predetermined amount of the one or more internal standards. The present disclosure also provides a method for analyte quantification. The method comprises adding one or more calibrators to a sample comprising one or more analytes; applying mass spectrometry (MS) to the sample; and using a trained machine learning model to determine an absolute concentration of the one or more analytes.

Abstract: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 ?m/minute.

Abstract: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5?m/minute.

Abstract: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 ?m/minute.

Abstract: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 ?m/minute.

Abstract: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 ?m/minute.

Abstract: A wakeup signal generating circuit is connected to an input of an electrically driven motor having a drive shaft that is mechanically coupled to a power sliding door or power lift gate of an automobile. The motor is normally responsive to a motor drive signal to control door/lift gate movement via rotation of the motor drive shaft. In the absence of the motor drive signal, the motor is responsive to rotation of the drive shaft, via manual movement of the door or lift gate, to produce a back electromotive force (EMF) signal at the input of the motor. The wakeup signal generating circuit is responsive to the back EMF signal to produce a wakeup signal. In one embodiment, the wakeup signal is used to cause a control circuit controlling the overall operation of the motor to wake up from a reduced-function, power conserving sleep mode of operation and operate in a full-function, full power wakeup mode of operation.

Abstract: A confocal scanning microscope apparatus and method is used to rapidly acquire spectrally resolved images. The confocal scanning microscope apparatus includes optics used to simultaneously acquire at least two points along a scan pattern on a sample plane of a sample, wherein the points include regions of the sample represented by at least two pixels. A detection arm is placed in the path of the light reflected, scattered, or emitted from the sample plane comprising a spectrometer having a slit for receiving such light and a detector array placed behind the spectrometer. The image corresponding to the at least two points is recorded on the first axis of said detector and the spectral resolution thereof is simultaneously recorded on the second axis of said detector. The confocal scanning microscope apparatus and method offers significant improvements to the current techniques for genetic sequencing, as well as significant improvements to traditional confocal scanning microscope applications.

Abstract: A programmable turn signal and hazard flasher control system (10, 100) includes a lamp control module (12, 108) coupling a turn signal request unit (14, 106) to a number of turn signal lamps (20-30). The module (12, 108) couples the turn signal request unit (14, 106) to a number of vehicle turn signal lamps (20-26) in a first mode of operation and to a number of vehicle turn signal lamps (20-26) as well as a number of additional turn signal lamps (28, 30) in a second mode of operation to thereby accommodate lighting requirements of a trailer or other towed vehicle or to accommodate different lighting requirements in vehicles of a common vehicle platform. The load current to the turn signal lamps (20-30) in either case flows through a shunt resistor R1, and is controlled by a flasher circuit (54) during normal operation to a first flash rate and during a lamp failure condition to a second faster flash rate.