Patents by Inventor John D. Sylyestri

John D. Sylyestri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of processing backside unlayering of MOSFET devices for electrical and physical characterization including a collimated ion plasma
    Patent number: 7015146
    Abstract: A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor only within the backside window via an opening in a focusing shield. This focused collimated ion plasma contacts the semiconductor, only within the window, while the semiconductor is simultaneously being rotated and tilted by a temperature controlled stage, for uniform removal of semiconductor layering such that the semiconductor features, in a location on the semiconductor corresponding to the backside window, are exposed. Backside unlayering of the invention may be enhanced by CAIBE processing.
    Type: Grant
    Filed: January 6, 2004
    Date of Patent: March 21, 2006
    Assignee: International Business Machines Corporation
    Inventors: Terence L. Kane, Darrell L. Miles, John D. Sylyestri, Michael P. Tenney