Abstract: Dry backside and bevel edge clean is performed without exposure to plasma to remove unwanted photoresist material from a substrate. The substrate is supported on a substrate support and elevated by minimum contact area (MCA) supports so that etch gas can access a backside of the substrate. A gas distributor delivers curtain gas to a frontside of the substrate to protect photoresist material on the frontside. An etch gas delivery source delivers a first etch gas flow to the backside, and one or more peripheral gas inlets deliver a second etch gas flow to a periphery of the frontside and around the bevel edge. A radiative heat source is positioned below the substrate to heat the substrate.