Abstract: Disclosed herein are methods and devices that use a low-thermal conductivity inert gas to shield reactant gases and thus enabling a cold wall operation within a hot wall system.

Abstract: Disclosed herein are methods for the growth of (110) GaAs solar cells by hydride vapor phase epitaxy (HVPE) as an advance towards a (110)-oriented device platform with substrate reuse via spalling. Controlled spalling offers a fracture-based path to substrate amortization, allowing device removal and substrate reuse, but the faceted surface generated in spalling of (100)-GaAs presents hurdles to direct regrowth of subsequent devices. Spalling of (110)-oriented substrates takes advantage of the natural (110) cleavage plane in zinc-blende III-V materials, eliminating this faceting.

Abstract: Described herein are devices and methods related to compositionally graded buffers (CGB) and methods and/or systems for producing CGBs. CGBs enable the growth of high quality materials that are lattice mismatched to a substrate. More specifically, the present disclosure relates to methods for making CGBs by hydride vapor phase epitaxy (HVPE). HVPE methods using a single chamber for producing a CGB may result in a transience in the CGB layers as the flows supplying the reactants are switched to produce the next subsequent layer in the CGB. In contrast to this static style of grading, the present disclosure describes a dynamic method for producing CGBs, in which multiple growth chambers are utilized.

Abstract: Disclosed herein is the controlled epitaxy of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl3 generator.

Abstract: The present disclosure relates to a method that includes contacting a surface of a first layer that includes a Group III element and a Group V element with a gas that includes HCl, where the first layer is positioned in thermal contact with a wafer positioned in a chamber of a reactor, and the contacting results in a roughening of the surface.

Abstract: Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of materials grown by hydride vapor phase epitaxy (HVPE).

Abstract: Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).

Abstract: Disclosed herein are methods and devices that use a low-thermal conductivity inert gas to shield reactant gases and thus enabling a cold wall operation within a hot wall system.

Abstract: Disclosed herein are novel hydride vapor phase epitaxy reactors and methods of use.

Abstract: Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

Abstract: The present disclosure relates to a photoelectrochemical electrode that includes an absorber layer having a quantum well, where the photoelectrochemical electrode is configured to perform a first reaction defined as, 4H?+4e?2H2, or a second reaction defined as, 2H2OO2+4H++4e?, when the photoelectrochemical electrode is configured to be in contact with water.

Abstract: The present disclosure relates to a method that includes contacting a surface of a first layer that includes a Group III element and a Group V element with a gas that includes HCl, where the first layer is positioned in thermal contact with a wafer positioned in a chamber of a reactor, and the contacting results in a roughening of the surface.

Abstract: Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).

Abstract: Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

Abstract: A motor vehicle has a daytime running light system for providing automatic illumination of a pair of headlamps at reduced intensity. The reduced intensity operation is accomplished by way of a switch mode power converter which operates to provide a daytime running light voltage that is less than the vehicle system voltage normally supplied to the headlamps. The switch mode power converter makes extremely efficient use of the vehicle electrical power by minimizing power dissipation in attaining a lower daytime running light voltage. Furthermore, the daytime running light system is amenable to simple calibration modification to implement varying daytime running light voltage levels in accordance with vehicle system and/or various international requirements.