Patents by Inventor John Davlin

John Davlin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin coating for maximum fill characteristic yielding a planarized thin film surface
    Patent number: 7202138
    Abstract: A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.
    Type: Grant
    Filed: November 28, 2001
    Date of Patent: April 10, 2007
    Assignee: Micron Technology, Inc.
    Inventors: John Whitman, John Davlin
  • Methods for forming material layers with substantially planar surfaces on semiconductor device structures
    Publication number: 20070004221
    Abstract: Methods for partially or substantially filling recesses (e.g., capacitor containers, shallow trenches for formation of shallow trench isolation (STI) structures, etc.) That communicate with a surface of the semiconductor device structure include applying material to a surface of the semiconductor device structure and spreading the material. The thickness of the material covering the surface may be less than (e.g., about half of or less than half of) the depths of the recesses. The surface may remain substantially uncovered by the material.
    Type: Application
    Filed: September 8, 2006
    Publication date: January 4, 2007
    Inventors: John Whitman, John Davlin
  • Semiconductor device fabrication methods employing substantially planar buffer material layers to improve the planarity of subsequent planarazation processes
    Publication number: 20070004219
    Abstract: A method for fabricating a semiconductor device structure includes applying a stress buffer material onto a semiconductor device structure and spreading the stress buffer material. When the stress buffer material is spread, it substantially fills recesses formed in a surface of the semiconductor device structure and imparts the stress buffer material with a substantially planar surface. The thickness of the stress buffer material covering the surface of the semiconductor device structure may be less than the depths of the recesses. The surface may remain substantially uncovered by the material.
    Type: Application
    Filed: September 8, 2006
    Publication date: January 4, 2007
    Inventors: John Whitman, John Davlin
  • Spin coating for maximum fill characteristic yielding a planarized thin film surface
    Patent number: 7101771
    Abstract: A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.
    Type: Grant
    Filed: November 28, 2001
    Date of Patent: September 5, 2006
    Assignee: Micron Technology, Inc.
    Inventors: John Whitman, John Davlin
  • Spin coating for maximum fill characteristic yielding a planarized thin film surface
    Publication number: 20020064967
    Abstract: A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.
    Type: Application
    Filed: November 28, 2001
    Publication date: May 30, 2002
    Inventors: John Whitman, John Davlin
  • Spin coating for maximum fill characteristic yielding a planarized thin film surface
    Publication number: 20020034884
    Abstract: A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.
    Type: Application
    Filed: November 28, 2001
    Publication date: March 21, 2002
    Inventors: John Whitman, John Davlin
  • Spin coating for maximum fill characteristic yielding a planarized thin film surface
    Publication number: 20020005539
    Abstract: A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.
    Type: Application
    Filed: August 30, 2001
    Publication date: January 17, 2002
    Inventors: John Whitman, John Davlin