Abstract: A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.

Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

Abstract: A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.

Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

Abstract: Provided is an apparatus and a method for heating fluid in a proximity head. A method for semiconductor wafer processing, includes providing liquid to a proximity head including a heating portion, heating the liquid within the heating portion of the proximity head and delivering the heated liquid to a surface of a semiconductor wafer for use in a wafer processing operation including forming a meniscus between the proximity head and the surface of the semiconductor wafer.

Abstract: Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer. An inlet port proximately disposed near the outlet port vacuums the heated fluid to remove the heated fluid from the surface of the semiconductor wafer.

Abstract: Provided is an apparatus and a method for heating fluid in a proximity head. A method for semiconductor wafer processing, includes providing liquid to a proximity head including a heating portion, heating the liquid within the heating portion of the proximity head and delivering the heated liquid to a surface of a semiconductor wafer for use in a wafer processing operation including forming a meniscus between the proximity head and the surface of the semiconductor wafer.

Abstract: A system and a method for cleaning and rinsing a wafer includes at least three rollers that are capable of supporting a wafer by an edge of the wafer. At least one of the rollers is driven and thereby capable of rotating the wafer. At least one of the rollers is a movable roller mounted on an actuator. The system and method also includes a first movable scrubbing roller capable of being moved away from and alternatively to the first side of the wafer. A second movable scrubbing roller capable of being moved away from and alternatively to a second side of the wafer is also included. The second side of the wafer opposes the first side of the wafer. The system and method also includes at least one first side nozzle directed toward the first side of the wafer and at least one second side nozzle directed toward the second side of the wafer.

Abstract: A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

Abstract: A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

Abstract: A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.

Abstract: A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.

Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

Abstract: An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.

Abstract: A system and a method for cleaning and rinsing a wafer includes at least three rollers that are capable of supporting a wafer by an edge of the wafer. At least one of the rollers is driven and thereby capable of rotating the wafer. At least one of the rollers is a movable roller mounted on an actuator. The system and method also includes a first movable scrubbing roller capable of being moved away from and alternatively to the first side of the wafer. A second movable scrubbing roller capable of being moved away from and alternatively to a second side of the wafer is also included. The second side of the wafer opposes the first side of the wafer. The system and method also includes at least one first side nozzle directed toward the first side of the wafer and at least one second side nozzle directed toward the second side of the wafer.

Abstract: A system and a method for cleaning and rinsing a wafer includes at least three rollers that are capable of supporting a wafer by an edge of the wafer. At least one of the rollers is driven and thereby capable of rotating the wafer. At least one of the rollers is a movable roller mounted on an actuator. The system and method also includes a first movable scrubbing roller capable of being moved away from and alternatively to the first side of the wafer. A second movable scrubbing roller capable of being moved away from and alternatively to a second side of the wafer is also included. The second side of the wafer opposes the first side of the wafer. The system and method also includes at least one first side nozzle directed toward the first side of the wafer and at least one second side nozzle directed toward the second side of the wafer.

Abstract: Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer. An inlet port proximately disposed near the outlet port vacuums the heated fluid to remove the heated fluid from the surface of the semiconductor wafer.

Abstract: A method for cleaning a semiconductor wafer is provided which includes plasma etching a feature into a low K dielectric layer having a photoresist mask where the plasma etching generates etch residues. The method also includes ashing the semiconductor wafer to remove the photoresist mask where the ashing generating ashing residues. The method further includes removing the etching residues and the ashing residues from the low K dielectric layer where the removing is enhanced by scrubbing the low K dielectric layer of the semiconductor wafer with a wet brush that applies a fluid mixture including a cleaning chemistry and a wetting agent.

Abstract: A method for cleaning a semiconductor substrate with a sonic cleaner is provided. The method initiates by introducing a cooling fluid into an inner jacket region of a sonic cleaner to cool a sonic resonator positioned within the inner jacket region. Then, a cleaning agent is introduced into an outer jacket region of the sonic cleaner to clean a semiconductor substrate. Next, a cooling fluid/cleaning agent interface is defined at an orifice location between the inner jacket region and the outer jacket region. Then, sonic energy from the resonator is transmitted to the cleaning agent through the interface at the orifice. Next, the cleaning agent is applied to the semiconductor substrate.

Abstract: A system and method for re-circulating processing fluids in a substrate processing system is provided. A fluid re-circulation system for a brush box processing tool includes a supply tank into which processing chemicals, DI water, or other processing fluids are introduced into the system from an external source. Processing chemicals are provided to the brush box and dispensed to process a substrate. Dispensed fluids drain from the brush box into a diverter through which fluids either flow to waste, or into a collection tank. Fluids from the collection tank flow into the supply tank to re-circulate for wafer processing. The re-circulation system includes filters for maintaining chemical purity, and chemical concentration is monitored and adjusted as necessary.