Abstract: In an approach to generating advice for supply chain disruptions, one or more computer processors receive a query associated with a supply chain disruption. The one or more computer processors retrieve data corresponding to the supply chain disruption. Based on the retrieve data, the one or more computer processors determine one or more solutions to the supply chain disruption. The one or more computer processors display the one or more determined solutions. The one or more computer processors receive a selection of one of the one or more determined solutions. The one or more computer processors detect one or more patterns associated with the selected solution.

Abstract: In an approach to generating advice for supply chain disruptions, one or more computer processors receive a query associated with a supply chain disruption. The one or more computer processors retrieve data corresponding to the supply chain disruption. Based on the retrieve data, the one or more computer processors determine one or more solutions to the supply chain disruption. The one or more computer processors display the one or more determined solutions. The one or more computer processors receive a selection of one of the one or more determined solutions. The one or more computer processors detect one or more patterns associated with the selected solution.

Abstract: A method of stimulating a MicroElectroMechanical Systems (MEMS) structure (e.g. a cantilever), and an optical sensor for use in such a method, using optical radiation pressure instead of electrostatic pressure, or the like. An optical pulse creates optical radiation pressure which stimulates movement of the MEMS structure and then movement of the MEMS structure may be measures. An interrogating light may be input after the optical pulse to measure movement of the MEMS structure. Advantageously, the same light source can be utilized to stimulate movement of the MEMS structure and to measure movement of the MEMS structure.

Abstract: A method of stimulating a MicroElectroMechanical Systems (MEMS) structure (e.g. a cantilever), and an optical sensor for use in such a method, using optical radiation pressure instead of electrostatic pressure, or the like. An optical pulse creates optical radiation pressure which stimulates movement of the MEMS structure and then movement of the MEMS structure may be measures. An interrogating light may be input after the optical pulse to measure movement of the MEMS structure. Advantageously, the same light source can be utilised to stimulate movement of the MEMS structure and to measure movement of the MEMS structure.

Abstract: A detector device (75) for detecting incident radiation at particular wavelengths is disclosed. The device (75) includes a base layer comprising a substrate (77). A resonant cavity is formed on the base layer between a pair of reflectors. One reflector is formed by a first reflector layer (83) disposed in fixed relationship with respect to the base layer and the other reflector is formed by a second reflector layer (91) disposed on a membrane (89) in substantially parallel relationship to the substrate (77). A detector (79) is provided within the cavity to absorb incident radiation therein for detection purposes. By placing the absorbing layer of the detector (79) within the resonant cavity, high quantum efficiency can be achieved using very thin absorbing layers, thus significantly reducing the detector volume and hence noise. Various different arrangements of the detector device (75) and different methods of fabricating the same are also disclosed.

Abstract: A tunable cavity resonator for filtering radiation in the optical and IR wavelengths and a method for fabricating same. The resonator having a pair of reflectors, one in fixed relationship to a substrate and the other formed upon a suspended moveable membrane disposed a cavity length from the one reflector. The resonator also including a pair of spaced apart electrodes either constituted by the reflectors or juxtaposed therewith, which are electrostatically operable to move the membrane and other reflector relative to the one reflector. A first reflector layer is deposited on the substrate to form the one reflector. A sacrificial layer having a high etch selectivity for releasing the membrane in a suspended and spaced relationship from the one reflector is formed on the first reflector layer. The membrane is deposited on the sacrificial layer using a deposition technique characterised by providing the required intrinsic stress in the membrane.

Abstract: An automatically passivated n-p junction is formed from a p-type body containing Group II and Group VI elements, one of which is mercury. A passivation layer is then formed having at least one window provided therein on a surface of the p-type body. The p-type body is then subjected to a reactive ion etching process using the passivation layer as a mask to form the n-p junction. Ohmic contacts are then formed on the n-type and p-type regions. The method may be extended to form an array of n-p junctions on a semiconductor body having a plurality of p-type material layers.