Patents by Inventor John Delucca

John Delucca has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dielectric etching
    Patent number: 8318606
    Abstract: An etchant for dielectrics, such as silicon dioxide, that leaves monocrystalline silicon surface exposed by the etchant free of etch damage, such as etch pits, when the etch is done in the presence of transition metals, such as copper, tungsten, titanium, gold, etc. The etchant comprises hydrofluoric acid and a source of halide anion, such as hydrochloric acid or a metal-halide. The etchant is useful in microelectromechanical system device fabrication and in deprocessing integrated circuits or the like.
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: November 27, 2012
    Assignee: LSI Corporation
    Inventors: Frank Baiocchi, David Kern, John DeLucca
  • SOLDERING METHOD AND RELATED DEVICE FOR IMPROVED RESISTANCE TO BRITTLE FRACTURE
    Publication number: 20120280023
    Abstract: A lead-free solder joint is formed between a tin-silver-copper solder alloy (SAC), SACX, or other commonly used Pb-free solder alloys, and a metallization layer of a substrate. Interaction of the SAC with the metallization layer forms an intermetallic compound (IMC) that binds the solder mass to the metallization layer. The IMC region is substantially free of any phosphorous-containing layers or regions.
    Type: Application
    Filed: July 18, 2012
    Publication date: November 8, 2012
    Applicant: LSI Corporation
    Inventors: Ahmed Amin, Frank Baiocchi, John Delucca, John Osenbach, Brian T. Vaccaro
  • Soldering method and related device for improved resistance to brittle fracture with an intermetallic compound region coupling a solder mass to an Ni layer which has a low concentration of P, wherein the amount of P in the underlying Ni layer is controlled as a function of the expected volume of the solder mass
    Patent number: 8242378
    Abstract: A lead-free solder joint is formed between a tin-silver-copper solder alloy (SAC), SACX, or other commonly used Pb-free solder alloys, and a metallization layer of a substrate. Interaction of the SAC with the metallization layer forms an intermetallic compound (IMC) that binds the solder mass to the metallization layer. The IMC region is substantially free of any phosphorous-containing layers or regions.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: August 14, 2012
    Assignee: Agere Systems Inc.
    Inventors: Ahmed Amin, Frank Baiocchi, John Delucca, John Osenbach, Brian T. Vaccaro
  • MODIFICATION OF SEMICONDUCTOR OPTICAL PATHS BY MORPHOLOGICAL MANIPULATION
    Publication number: 20120033925
    Abstract: An optical device includes a substrate and a semiconductor layer located over the substrate. The optical path includes a semiconductor layer that further includes a waveguide core region. The core region includes a first semiconductor region with a morphology of a first type and a first refractive index. The first semiconductor region is located adjacent a second semiconductor region that has a morphology of a second type and a second refractive index that is different from the first refractive index.
    Type: Application
    Filed: August 6, 2010
    Publication date: February 9, 2012
    Applicant: LSI Corporation
    Inventors: John DeLucca, James Cargo
  • Dielectric Etching
    Publication number: 20110053378
    Abstract: An etchant for dielectrics, such as silicon dioxide, that leaves monocrystalline silicon surface exposed by the etchant free of etch damage, such as etch pits, when the etch is done in the presence of transition metals, such as copper, tungsten, titanium, gold, etc. The etchant comprises hydrofluoric acid and a source of halide anion, such as hydrochloric acid or a metal-halide. The etchant is useful in microelectromechanical system device fabrication and in deprocessing integrated circuits or the like.
    Type: Application
    Filed: August 25, 2009
    Publication date: March 3, 2011
    Inventors: Frank Baiocchi, David Kem, John DeLucca
  • INHIBITION OF COPPER DISSOLUTION FOR LEAD-FREE SOLDERING
    Publication number: 20100319967
    Abstract: A device fabrication method, according to which a tin-copper-alloy layer is formed adjacent to a copper-plated pad or pin that is used to electrically connect the device to external wiring. Advantageously, the tin-copper-alloy layer inhibits copper dissolution during a solder reflow process because that layer is substantially insoluble in liquid Sn—Ag—Cu (tin-silver-copper) solder alloys under typical solder reflow conditions and therefore shields the copper plating from direct physical contact with the liquefied solder.
    Type: Application
    Filed: June 28, 2007
    Publication date: December 23, 2010
    Applicant: AGERE SYSTEMS INC.
    Inventors: Ahmed Amin, Mark Adam Bachman, Frank A. Baiocchi, John A. Delucca, John W. Osenbach, Zhengpeng Xiong
  • Soldering Method and Related Device for Improved Resistance to Brittle Fracture
    Publication number: 20100243300
    Abstract: A lead-free solder joint is formed between a tin-silver-copper solder alloy (SAC), SACX, or other commonly used Pb-free solder alloys, and a metallization layer of a substrate. Interaction of the SAC with the metallization layer forms an intermetallic compound (IMC) that binds the solder mass to the metallization layer. The IMC region is substantially free of any phosphorous-containing layers or regions.
    Type: Application
    Filed: September 21, 2007
    Publication date: September 30, 2010
    Inventors: Ahmed Amin, Frank Baiocchi, John Delucca, John Osenbach, Brian T. Vaccaro