Abstract: An imaging system includes an RF source, a focal plane array and device for focusing the RF signal from the RF source. The focal plane array includes a plurality of carbon nanotube mixers for capturing RF signals and down-converting the signals to a selected bandwidth and output an output signal. The device focuses the RF signal output from said RF source onto the focal plane array.

Abstract: An imaging system includes an RF source, a focal plane array and device for focusing the RF signal from the RF source. The focal plane array includes a plurality of carbon nanotube mixers for capturing RF signals and down-converting the signals to a selected bandwidth and output an output signal. The device focuses the RF signal output from said RF source onto the focal plane array.

Abstract: A carbon nanotube field effect transistor includes a substrate, a source electrode, a drain electrode and a carbon nanotube. The carbon nanotube forms a channel between the source electrode and the drain electrode. The carbon nanotube field effect transistor also includes a gate dielectric and a gate electrode. The gate electrode is separated from the carbon nanotube by the gate dielectric, and an input radio frequency voltage is applied to the gate electrode.

Abstract: A carbon nanotube field effect transistor includes a substrate, a source electrode, a drain electrode and a carbon nanotube. The carbon nanotube forms a channel between the source electrode and the drain electrode. The carbon nanotube field effect transistor also includes a gate dielectric and a gate electrode. The gate electrode is separated from the carbon nanotube by the gate dielectric, and an input radio frequency voltage is applied to the gate electrode.

Abstract: A resonant transistor includes a substrate, a source and a drain formed on the substrate, an input electrode and a carbon nanotube gate. A gap is formed between the source and the drain. The input electrode is formed on the substrate. The carbon nanotube gate is clamped on one end by a contact electrode and positioned, preferably cantilevered, over the gap and over the input electrode.

Abstract: A frequency selective limiter includes a pair of back-to-back diodes, coupled to an input and an output of the frequency selective limiter, and a resonator. The resonator is coupled to the pair of back-to-back diodes.

Abstract: Methods and apparatus for fabricating carbon nanotubes (CNTs) and carbon nanotube devices. These include a method of fabricating self-aligned CNT field-effect transistors (FET), a method and apparatus of selectively etching metallic CNTs and a method and apparatus of fabricating an oxide in a carbon nanotube (CNT) device. These methods and apparatus overcome many of the disadvantages and limitations of the prior art.

Abstract: An RF mixer includes a diode quad including first, second, third and fourth carbon nanotube diodes, each carbon nanotube diode including a p-n junction The mixer also includes a RF input coupled each of the diodes, and a local oscillator input coupled with each of the diodes.

Abstract: A radio frequency (RF) filter includes a substrate, first and second dielectric layers formed on first and second portions of the substrate, a ground plane formed on a third portion of said substrate, a carbon nanotube array, and first and second electrodes. The third portion of the substrate includes, at least in part, the area between the first and second portions thereof. The carbon nanotube array is formed on a portion of said ground plane between the first and second dielectric layers. The first and second electrodes are formed on the first and second dielectric layers, such that an RF signal may be input to and output from the carbon nanotube array via the first and second signal guides. A third electrode is disposed over the carbon nanotube array and is used to voltage bias the array.

Abstract: A frequency selective limiter operative in a magnetostatic surface mode with a pair of parallel microstrip transducers formed on a substrate and having a length at least equal to the width of an overlaying YIG film ranging in thickness from about 0.1 ?m and about 5.0 ?m and having a width equal to or less than about 20. mm and which is biased by a permanent magnetic field applied in the plane of the film parallel to the transducers so that magnetostatic surface waves propagate therebetween in the YIG film so as to provide a limiter threshold level in the range of ?75 dBm to ?35 dBm. The transducers have specific spacings and dimensions.

Abstract: A group delay equaliser for a repeater in a waveguide communication system uses a magnetostatic wave delay line as a dispersive element to compensate for inherent dispersion in the waveguide. The delay line uses a thin ferrimagnetic film in which a propagation path is defined which is biased by a uniform adjustable magnetic field which is established to provide an adjustable dispersion characteristic. The film has associated with it means for preventing reflections of magnetostatic waves propagated beyond the ends of the propagation path. A substantially linear propagation delay with frequency is achieved over a bandwidth of 500 MHz. at a centre frequency of 1.5 GHz.