Abstract: A step joint between two plastic pieces suitable for an ultrasonic weld joint. A first plastic piece includes a series of ribs, each rib having generally horizontal top surface. A generally vertical section extends upward behind the ribs. A second plastic piece includes a generally horizontal section for mating with the ribs, the horizontal section of the second plastic piece covering the generally horizontal section of two or more ribs. The second plastic piece also includes a generally vertical section suitable for mating with the generally vertical section of the second plastic piece.

Abstract: A power adapter is disclosed for use in connecting electrical power to a telephone station via a cross-connect jack. The power adapter has a plug-end for mating with the cross-connect field and a jack-end for receiving a cross-connect patch cord. The power adapter includes a two-conductor permanently attached power cord. Bent wire technology is used to connect the contacts of the receiving jack with the contacts of the plug while blade insertion technology is used for making contact with the ends of the power conductors.

Abstract: There is disclosed a cross-connect having a hinged rotating section panel which accepts multi-pair cables. The hinged section is mounted to a forward edge of a support section and the multi-pair cables are suspended between the two sections so that the cables remain in the same plane regardless of the position of the hinged section. The user cross connects between the cable pairs using the familiar modular plug and jack. The design of the cross-connect field is modular so that the cross-connect field can easily be added to as the system grows. The forward edge of the support panel slopes vertically to insure that the patch cords dress properly from top to bottom.

Abstract: A low-leakage, heterojunction photodiode for use as a detector sensitive to infrared radiation is provided. The diode structure comprises a PbTe substrate of n-type conductivity with an n-type epitaxial buffer layer on the substrate and an epitaxial active layer on the buffer layer. The buffer layer is either Pb.sub.(1-x) S.sub.x Te or Pb.sub.1-x Se.sub.x Te with the atomic fraction of S or Se, x, being greater than 0 but less than 0.1. The active layer is Pb.sub.1-y Sn.sub.y Te with the atomic fraction of Sn, y, being greater than 0 but less than 0.3. There is a p-n junction created in the active layer with the n side of the junction being adjacent the buffer layer. Metal is deposited on the substrate and on the active layer to provide electrical contact to the diode.

Abstract: A high speed infrared detector for use as a receiver in a 10.6.mu.m communication system and being composed of a Pb.sub.0.8 Sn.sub.0.2 Te crystalline substrate, a 10.6.mu.m absorbing layer on said substrate composed of a p-type Pb.sub.0.8 Sn.sub.0.2 Te material and a 10.6.mu.m transparent layer disposed on said first layer and composed of a Pb.sub.0.9 Sn.sub.0.1 Te n-type material.

Abstract: An inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 .mu.m portion of the infrared spectrum and operable above 77.degree. K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb.sub..90 Sn.sub..10 Te material on said substrate and a second active layer of a Pb.sub..80 Sn.sub..20 Te material on said buffer layer. The first and second layers are grown by liquid phase epitaxy.