Abstract: A ladder comprises a front leg and a rear leg connected by a slider bracket. The slider bracket comprises a base and a track. The base comprises an aperture therein. The track extends away from the base and comprises a slot therein. The base is rotatably coupled to the front leg by a front pin in the aperture. The track is slidably coupled to the rear leg by a rear pin in the slot. When spreading the rear leg away from the front leg, the base pivots around the front pin as the rear pin slides in the slot of the track until the rear pin reaches the end of the slot in the track. The slot also may include a latch at the end of the slot that engages the rear pin.

Abstract: A step ladder is designed to hang on an OEM ladder on a recreational vehicle (“RV”) while traveling on the road. The step ladder comprises a hanger bracket to hang the step ladder on the OEM ladder. The bracket is wider than a width of the legs of the step ladder to project over a rung of the OEM ladder. A hook on the bracket grabs the rung of the OEM ladder. The step ladder may be further secured to the OEM ladder by inserting a lock through the bracket and through or adjacent to the rung of the OEM ladder, or by inserting a lock through another rung of the OEM ladder and a retaining tab of the step ladder. A stabilizer attached to the step ladder and the RV can further stabilize the ladder when desired.

Abstract: A step ladder is designed to hang on an OEM ladder on a recreational vehicle (“RV”) while traveling on the road. The step ladder comprises a hanger bracket to hang the step ladder on the OEM ladder. The bracket is wider than a width of the legs of the step ladder to project over a rung of the OEM ladder. A hook on the bracket grabs the rung of the OEM ladder. The step ladder may be further secured to the OEM ladder by inserting a lock through the bracket and through or adjacent to the rung of the OEM ladder, or by inserting a lock through another rung of the OEM ladder and a retaining tab of the step ladder. A stabilizer attached to the step ladder and the RV can further stabilize the ladder when desired.

Abstract: A ladder comprises a front leg and a rear leg connected by a slider bracket. The slider bracket comprises a base and a track. The base comprises an aperture therein. The track extends away from the base and comprises a slot therein. The base is rotatably coupled to the front leg by a front pin in the aperture. The track is slidably coupled to the rear leg by a rear pin in the slot. When spreading the rear leg away from the front leg, the base pivots around the front pin as the rear pin slides in the slot of the track until the rear pin reaches the end of the slot in the track. The slot also may include a latch at the end of the slot that engages the rear pin.

Abstract: A process for forming zener diodes from an IC structure having coextensive layers of gate silicon dioxide and polycrystalline silicon on a substrate and self-aligned with a diffused region in the substrate. A differential oxidation of the polycrystalline silicon and substrate silicon is followed in turn by a silicon dioxide etch to expose only the polycrystalline silicon layer. Thereafter, the exposed polycrystalline silicon is etched with an etchant that does not materially etch silicon dioxide. The exposed substrate is then subjected to an ion implantation, performed with an energy sufficient to locate the peak impurity concentration below the substrate surface, and a dose sufficient to moderately dope the area originally under the polycrystalline silicon electrode while reducing the effective concentration of the opposite impurity type dopant in the diffused region of the substrate.

Abstract: A process for fabricating an electrical contact which connects an epitaxial layer, well, or substrate with a metallic interconnect layer during the course of creating active integrated circuit devices in a semiconductor wafer. The process forms self-aligned contacts by establishing the contact locations coincident with the definition of the active regions, at an early step in the wafer fabrication process. Thereafter, a gate silicon dioxide layer and a polycrystalline silicon electrode layer are combined to mask the contact region surface from intermediate process environments, e.g., ion implantation and POCl.sub.3 diffusion operations. As the wafer fabrication process approaches conclusion, the contact region is opened by a selective etch of the polycrystalline silicon and the silicon dioxide layers, an enhancement implant into the surface of the contact region, a hydrogen environment annealing operation, and a deposition and patterning of the metallic interconnect layer.

Abstract: A method of making a ROM and encoding it late in the method. Encoding is by ion implantation. A second level of polycrystalline used for resistors outside the ROM is used as the encoding mask.

Abstract: A method of making a ROM and encoding it late in the method. A silicon nitride layer etch mask is used for encoding by ion implantation, avoiding the need for a separate encoding mask.

Abstract: A method of making a high speed and high density IGFET read-only memory and encoding it late in said method. A unique ROM structure permits encoding by ion implantation thin apertures in a phosphosilicate glass layer, without requiring ROM output lines passing over the implant apertures or expanding ROM size to obtain highest ROM operating speed.

Abstract: A method of making a ROM and a two-level polycrystalline silicon RAM on a chip and encoding the ROM in later stages of the method, without adding a mask to the method. The mask used to define the second level of polycrystalline silicon for the RAM is also used to provide an ion implant mask for the ROM.