Patents by Inventor John E. Dzarnoski

John E. Dzarnoski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dielectric gap material for magnetoresistive heads with conformal step coverage
    Patent number: 6449132
    Abstract: A silicon nitride dielectric film for use in an MR head according to the present invention comprises from about 38% to 44% by volume of Si, from about 35% to 37% by volume of N, and from about 21% to 24% by volume of H. The dielectric film is formed by plasma enhanced chemical vapor deposition (PECVD) at relatively low temperatures. A plurality of gases capable of reacting to form silicon nitride are introduced into a PECVD reactor. An electric field is generated in the reactor to produce a plasma. The gases in the reactor react in the presence of the electrical field to form a silicon nitride dielectric film.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: September 10, 2002
    Assignee: Seagate Technology LLC
    Inventors: Liu Yang, Jumna Ramdular, Sara L. Gordon, Ralph D. Knox, John E. Dzarnoski