Abstract: Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer. The detectors are intrinsic semiconductor detectors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting rhenium disilicide detectors are efficient at wavelengths which mate with the transmission capabilities of certain optical fibers, thereby enhancing the combination of infrared detectors and optical fiber transmission previously known. The range of electromagnetic radiation sensed by these rhenium disilicide detectors include the infrared range of wavelengths up to 14 microns.

Abstract: Transition metal silicide semiconductor electromagnetic radiation source and detectors have a thin film of semiconducting silicide grown or deposited on a silicon wafer. The transition metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhenium, barium, calcium, magnesium and osmium. The detectors are intrinsic and can be formed either as discrete devices, monolithically or in array on a silicon chip to provide an integrated detector. The transition metal silicide semiconductors are efficient detectors at wavelengths which mate with the transmission capabilities of certain optical fibers enhancing the combination of infra-red detectors and optical fiber transmission previously unknown. Iron disilicide is useful as an infra-red radiation source and as an extrinsic detector as well.

Abstract: Semiconducting metal silicide electromagnetic radiation sources and detectors have a thin film of semiconducting metal silicide grown or deposited on a silicon wafer. The metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhenium, barium, calcium, magnesium and osmium. The detectors are intrinsic semiconductors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting metal silicide devices are efficient detectors at wavelengths which mate with the transmission capabilities of certain optical fibers enhancing the combination of infra-red detectors and optical fiber transmission preveously known. Iron disilicide is useful as an infra-red radiation source and as an extrinsic detector as well.

Abstract: Cyclic sulfonate-sulfate anhydrides are produced by the reaction of an .alpha.- or .beta.-type sulfolene compound with SO.sub.3. Reaction of the cyclic sulfonate-sulfate anhydrides with alcohols produces alkyl esters of hydroxysulfolane sulfonic acids. The cyclic sulfonate-sulfate anhydrides or the alkyl esters of hydroxysulfolane sulfonic acids can be hydrolyzed to hydroxysulfolane sulfonic acids or their respective salts. The latter can be acylated to alkylcarbonyloxysulfolane sulfonic acids.

Abstract: A process for oligomerizing monoolefins using a catalyst system comprising at least one organoaluminum halide and at least one trans-halo(acyl)bis(triethylphosphine nickel(II) complex.

Abstract: The preparation and use of bis(.mu.-diphenylphosphido)tris(triethylphosphine)dinickel and tris(triethylphosphine)(triphenylphosphine)nickel is disclosed.

Abstract: trans-Halo(acyl)bis(triethylphosphine)nickel (II) complexes and methods of preparing and using them are disclosed.

Abstract: The preparation and use of bis(.mu.-diphenylphosphido)tris(triethylphosphine)dinickel and tris(triethylphosphine)(triphenylphosphine)nickel is disclosed.

Abstract: The preparation and use of bis(.mu.-diphenylphosphido)tris(triethylphosphine)dinickel and tris(triethylphosphine)(triphenylphosphine)nickel is disclosed.

Abstract: The preparation and use of bis(.mu.-diphenylphosphido)tris(triethylphosphine)dinickel and tris(triethylphosphine)(triphenylphosphine)nickel is disclosed.

Abstract: The preparation and use of bis(.mu.-diphenylphosphido)tris(triethylphosphine)dinickel and tris(triethylphosphine)(triphenylphosphine)nickel is disclosed.

Abstract: A process is provided for oxygenating alkyl-substituted aromatic compounds. In the process alkyl-substituted aromatic compounds are contacted with molecular oxygen in the presence of a suitable monocarboxylic acid, an at least partially soluble Te or Se compound, an inorganic bromine compound, and a compound selected from inorganic nitrates and compounds convertible to inorganic nitrates at conditions of the process. In an embodiment of the invention the process is carried out in two distinct steps with contact of the alkyl-substituted aromatic compounds and oxygen in the presence of the essential components produce an ester comprising both an aromatic alcohol and the carboxylic acid with subsequent hydrolyzing of this ester to produce an aromatic alcohol with regeneration of the carboxylic acid.

Abstract: Vinylidene chloride and vinylidene bromide are alkylated by reaction with alkylating agents such as selected olefins, tert-alkyl halides, and secondary or tertiary alcohols in a reaction medium comprising trifluoromethane-sulfonic acid. In specific embodiments, the reaction medium can additionally comprise water, methanol, and BF.sub.3.

Abstract: A halotetrahydropyran is oxidized and dehydrohalogenated employing oxygen and a free radical initiator.4-Chlorotetrahydropyran is converted to 5,6-dihydro-1,2-pyrone using 2,2'-azobis(2-methylpropionitrile) under elevated oxygen pressure and at a temperature of the order of about 170.degree.F.