Abstract: A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target.

Abstract: A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target.

Abstract: Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions may be reduced by adding a small amount of Si to the molten Al or molten Al alloy followed by filtering of the molten metals through a filter medium. Targets having substantially no inclusions therein of greater than about 400 ?m are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macroparticles sputtered onto the substrate.

Abstract: Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions may be reduced by adding a small amount of Si to the molten Al or molten Al alloy followed by filtering of the molten metals through a filter medium. Targets having substantially no inclusions therein of greater than about 400 ?m are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macroparticles sputtered onto the substrate.

Abstract: A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target.

Abstract: The present invention relates to a method for determining a critical size for a diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an Al2O3 inclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an Al2O3 inclusion (38) can be determined based upon the thickness of the sheath. More specifically, the diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.

Abstract: A preferred sputter target assembly (10, 10?) comprises a target (12, 12?), a backing plate (14, 14?) bonded to the target (12, 12?) along an interface (22, 22?) and dielectric particles (20, 20?) between the target (12, 12?) and the backing plate (14, 14?). A preferred method for manufacturing the sputter target assembly (10, 10?) comprises the steps of providing the target (12, 12?) and the backing plate (14, 14?); distributing the dielectric particles (20, 20?) between mating surfaces (24, 26) of the target (12, 12?) and the backing plate (14, 14?), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12?) to the backing plate (14, 14?) along the mating surfaces (24, 26).

Abstract: The present invention relates to a method for determining a critical size for a diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an Al2O3 inclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an Al2O3 inclusion (38) can be determined based upon the thickness of the sheath. More specifically, the diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.

Abstract: A preferred sputter target assembly (10, 10′) comprises a target (12, 12′), a backing plate (14, 14′) bonded to the target (12, 12′) along an interface (22, 22′) and dielectric particles (20, 20′) between the target (12, 12′) and the backing plate (14, 14′). A preferred method for manufacturing the sputter target assembly (10, 10′) comprises the steps of providing the target (12, 12′) and the backing plate (14, 14′); distributing the dielectric particles (20, 20′) between mating surfaces (24, 26) of the target (12, 12′) and the backing plate (14, 14′), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12′) to the backing plate (14, 14′) along the mating surfaces (24, 26).

Abstract: Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions (93) may be reduced by adding a small amount of Si to the molten Al or molten Al alloy followed by filtering of the molten metals through a filter medium (175). Targets having substantially no inclusions (93) therein of greater than about 400 &mgr;m are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macrmparticles sputtered onto the substrate.

Abstract: The present invention provides a film comprising alternate layers of a metal such as zirconium and silicon. The film has a critical temperature at which the film can undergo explosive crystallization. The film undergoes explosive crystallization upon subjecting the film to an energy impulse at temperature equal to or greater than the critical temperature.

Abstract: Method and apparatus for handling a plurality of glass containers moving on a conveyor at spaced intervals to a coating application area where three containers as a group are simultaneously grasped about their side wall and retracted laterally from the surface of the conveyor. This group of containers is then moved through a 90.degree. arc such that the containers exhibit horizontal axes one above the other. After the articles are turned to the horizontal, they are moved into position between three heel and neck-engaging chucks carried by an indexible turret. The bottles are released to the chucks which are cam actuated in timed relationship with respect to the grasping means so that the grasping means will release the containers or bottles to the chucks. With the chucks holding the bottles in horizontal position, the turret rotates about a horizontal axis parallel to the axes of the bottles through an arc of 90.degree. and presents the chucks in a horizontal line at the bottom of the turret.

Abstract: Method and apparatus for handling a plurality of glass containers moving on a conveyor at spaced intervals to a coating application area where three containers are simultaneously grasped about their side walls, retracted laterally from the surface of the conveyor, then moved through a 90.degree. arc such that the containers exhibit horizontal axes one above the other and then moved into position between three heel and neck-engaging chucks carried by an indexible turret. The bottles are released to the chucks which are cam actuated in timed relationship with respect to the grasping means so that the grasping means will release the containers or bottles to the chucks. With the chucks holding the bottles in horizontal position, the turret rotates about a horizontal axis parallel to the axes of the bottles through an arc of 90.degree.

Abstract: Apparatus is described for delivering two sulfur pellets or pills to the interior of hot glass containers which are moving on a conveyor. The pill delivery apparatus is supplied, through a magazine, with pills to a gating mechanism. The gating device which is pneumatically actuated, isolates two pills from the magazine, places the pills in the inlet to a delivery tube and then air under pressure, which actuates the gating device, is delivered to the two pills to pneumatically dispatch the pills through the delivery tube. The delivery tube has its delivery end positioned over the bottle conveyor so that the pills enter through the finish or neck of the bottle.