Abstract: A memory device may have multiple storage modes. The memory array may be arranged differently for the storage modes. For the storage modes, the memory device may store information to correctly map logical addresses to physical memory locations that have been repaired. In some examples, additional fuses storing addresses for the storage modes are included. In some examples, additional fuses encoding address shift information are included. In some examples, a mode register write may initiate a broadcast operation to provide mapping information for the different storage modes. In some examples, the memory device may include additional logic circuits for shifting the addresses for the different storage modes.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for initializing an activation count during a soft post-package repair (sPPR). After packaging, it may be necessary to perform post-package repair operations on rows of the memory. During an sPPR operation, an address of an original row of memory may be associated with an open repair address instead, such as when the original row is determined to be damaged or defective. When the repair row is associated with the original row, it may be necessary to initialize an activation count associated with the repair row to prevent unnecessary refresh operations occurring on the repair row and adjacent rows.

Abstract: A memory device may sometimes undergo post package repair. Systems and methods described herein may help preserve data of the memory device as part of the post package repair operations. Systems and methods described herein may enable receiving a post package repair command and an indication of a target memory address, performing an on-chip data preservation on a target portion of memory based on the target memory address, and performing post package repair on the target portion of memory based on the target memory address.

Abstract: The present disclosure includes apparatus, methods, and systems for error detection for a semiconductor device. An apparatus includes a memory array, a detector array, and a detector coupled to the detector array. The detector is configured to detect an error in a portion of the detector array and output an output signal to memory components coupled to the detector array in response to detecting the error.

Abstract: Methods, systems, and devices for adjusting a refresh rate during a self-refresh state are described. A memory system may enter a self-refresh state and execute a first set of refresh operations on a set of rows of memory cells at the memory system according to a first rate. The memory system may determine, based on executing the first set of refresh operations, that a counter associated with the set of refresh operations satisfies a threshold for a second time while the memory system is in the self-refresh state. In response to the counter satisfying the threshold for the second time, a flip-flop circuit at the memory system may modify an output of the flip-flop circuit and the memory system may decrease the rate for executing the refresh operations to a second rate based on the modified output of the flip-flop circuit.

Abstract: Methods, systems, and devices for adjusting a refresh rate during a self-refresh state are described. A memory system may enter a self-refresh state and execute a first set of refresh operations on a set of rows of memory cells at the memory system according to a first rate. The memory system may determine, based on executing the first set of refresh operations, that a counter associated with the set of refresh operations satisfies a threshold for a second time while the memory system is in the self-refresh state. In response to the counter satisfying the threshold for the second time, a flip-flop circuit at the memory system may modify an output of the flip-flop circuit and the memory system may decrease the rate for executing the refresh operations to a second rate based on the modified output of the flip-flop circuit.

Abstract: A memory device includes at least one memory bank comprising a set of redundant word lines, a set of normal word lines, and row hammer refresh logic. The RHR logic comprises a first input to receive a first signal indicative of whether a match was generated at a fuse of the memory device, a second input to receive a redundant row address corresponding to a first location of a memory array of the memory device, a third input to receive a word line address corresponding to a second location of the memory array of the memory device. The RHR logic also comprises an output to transmit at least one first memory address adjacent to the first location or at least one second memory address adjacent to the second location based on a value of the first signal.

Abstract: Memory devices may have internal circuitry that employs voltages higher and/or lower than voltages provided by an external power source. Charge pumps are DC/DC converters that may be used to generate the higher voltages internally. The number of available charge pumps in a memory device may be conservatively dimensioned to be high, in some systems to protect yields. Some of the available charge pumps may be disabled during manufacturing or testing to reduce the number of active charge pumps. The testing process may employ dedicated logic in the memory device and the disabling may employ fuse circuitry.

Abstract: Methods, apparatuses, and systems related to operations for managing the quality of an input signal received by a device and for providing feedback in real-time. A controller can provide a reference signal to the device for the input quality check. The memory can implement the input quality check by counting the number of transitions of the reference signal for a set time period and store the resulting count value(s). The memory can use the count value(s) to determine a condition or a quality for the reference signal.

Abstract: Methods, systems, and devices for adjusting a refresh rate during a self-refresh state are described. A memory system may enter a self-refresh state and execute a first set of refresh operations on a set of rows of memory cells at the memory system according to a first rate. The memory system may determine, based on executing the first set of refresh operations, that a counter associated with the set of refresh operations satisfies a threshold for a second time while the memory system is in the self-refresh state. In response to the counter satisfying the threshold for the second time, a flip-flop circuit at the memory system may modify an output of the flip-flop circuit and the memory system may decrease the rate for executing the refresh operations to a second rate based on the modified output of the flip-flop circuit.

Abstract: The present disclosure includes apparatus, methods, and systems for error detection for a semiconductor device. An apparatus includes a memory array, a detector array, and a detector coupled to the detector array. The detector is configured to detect an error in a portion of the detector array and output an output signal to memory components coupled to the detector array in response to detecting the error.

Abstract: Methods, apparatuses, and systems related to operations for managing the quality of an input signal received by a device and for providing feedback in real-time. A controller can provide a reference signal to the device for the input quality check. The memory can implement the input quality check by counting the number of transitions of the reference signal for a set time period and store the resulting count value(s). The memory can use the count value(s) to determine a condition or a quality for the reference signal.

Abstract: Systems and methods to perform multiple row repair mode for soft post-packaging repair of previously repaired data groups are disclosed. The devices may have activation circuitry that includes a mode register bit or a control antifuse that sends an input signal upon activation. The devices may also include a logic element that receives the input signal and sends, upon receiving the input signal, a configuration signal that enables a multiple row repair mode.

Abstract: A memory device includes at least one memory bank comprising a set of redundant word lines, a set of normal word lines, and row hammer refresh logic. The RHR logic comprises a first input to receive a first signal indicative of whether a match was generated at a fuse of the memory device, a second input to receive a redundant row address corresponding to a first location of a memory array of the memory device, a third input to receive a word line address corresponding to a second location of the memory array of the memory device. The RHR logic also comprises an output to transmit at least one first memory address adjacent to the first location or at least one second memory address adjacent to the second location based on a value of the first signal.

Abstract: A memory device includes at least one memory bank comprising a set of redundant word lines, a set of normal word lines, and row hammer refresh logic. The RHR logic comprises a first input to receive a first signal indicative of whether a match was generated at a fuse of the memory device, a second input to receive a redundant row address corresponding to a first location of a memory array of the memory device, a third input to receive a word line address corresponding to a second location of the memory array of the memory device. The RHR logic also comprises an output to transmit at least one first memory address adjacent to the first location or at least one second memory address adjacent to the second location based on a value of the first signal.

Abstract: A memory device includes at least one memory bank comprising a set of redundant word lines, a set of normal word lines, and row hammer refresh logic. The RHR logic comprises a first input to receive a first signal indicative of whether a match was generated at a fuse of the memory device, a second input to receive a redundant row address corresponding to a first location of a memory array of the memory device, a third input to receive a word line address corresponding to a second location of the memory array of the memory device. The RHR logic also comprises an output to transmit at least one first memory address adjacent to the first location or at least one second memory address adjacent to the second location based on a value of the first signal.

Abstract: Systems and methods to perform multiple row repair mode for soft post-packaging repair of previously repaired data groups are disclosed. The devices may have activation circuitry that includes a mode register bit or a control antifuse that sends an input signal upon activation. The devices may also include a logic element that receives the input signal and sends, upon receiving the input signal, a configuration signal that enables a multiple row repair mode.

Abstract: Memory devices may have internal circuitry that employs voltages higher and/or lower than voltages provided by an external power source. Charge pumps are DC/DC converters that may be used to generate the higher voltages internally. The number of available charge pumps in a memory device may be conservatively dimensioned to be high, in some systems to protect yields. Some of the available charge pumps may be disabled during manufacturing or testing to reduce the number of active charge pumps. The testing process may employ dedicated logic in the memory device and the disabling may employ fuse circuitry.

Abstract: Memory devices may have internal circuitry that employs voltages higher and/or lower than voltages provided by an external power source. Charge pumps are DC/DC converters that may be used to generate the higher voltages internally. The number of available charge pumps in a memory device may be conservatively dimensioned to be high, in some systems to protect yields. Some of the available charge pumps may be disabled during manufacturing or testing to reduce the number of active charge pumps. The testing process may employ dedicated logic in the memory device and the disabling may employ fuse circuitry.

Abstract: A memory device includes a plurality of memory cells and first circuitry coupled the plurality of memory cells, wherein the first circuitry is configured to perform a memory operation on at least one memory cell of the plurality of memory cells. The memory device also includes a charge pump coupled to the first circuitry, wherein the charge pump comprises a pump oscillator configured to generate an oscillator signal having only pulses with a width above a predetermined threshold pulse width and a pump core configured to receive the oscillator signal and a first electrical power signal at a first voltage, generate a second electrical power signal at a second voltage based upon the oscillator signal and the first voltage.