Abstract: A dropped-point skinner knife blade is configured with an integral push-hook feature. This blade configuration creates a skinning knife that is well configured to allow the user to initiate and continue a cut within the skin of an animal carcass. It also allows the user to alternatively cut the skin with a push-hook configuration whereby the user is “pushing” the blade away from the user in a must safer fashion as opposed to pulling the blade towards the user.

Abstract: In a plasma-producing device, an optimized magnet field for electron cyclotron resonance plasma generation is provided by a shaped pole piece. The shaped pole piece adjusts spacing between the magnet and the resonance zone, creates a convex or concave resonance zone, and decreases stray fields between the resonance zone and the workpiece. For a cylindrical permanent magnet, the pole piece includes a disk adjacent the magnet together with an annular cylindrical sidewall structure axially aligned with the magnet and extending from the base around the permanent magnet. The pole piece directs magnetic field lines into the resonance zone, moving the resonance zone further from the face of the magnet. Additional permanent magnets or magnet arrays may be utilized to control field contours on a local scale.

Abstract: A plasma producing device is furnished with a half height waveguide that transmits microwave energy through a window into an evacuated chamber, adjustable spacers controlling the distance between an opening of the waveguide and the window, and/or a return piece adjacent a permanent magnet producing the required magnetic field, preferably including sidewalls encompassing the permanent magnet. The improvements promote plasma uniformity at the workpiece by allowing smaller magnets to be employed, reducing stray magnetic fields outside the resonance zone, and facilitating transition of the microwaves from a rectangular transmission mode to a circular transmission mode outside the chamber. Facilitating transistion in this manner improves tuning or impedance matching.

Abstract: A light shield (40, 100) for closing the film slot (33) in a film cartridge (20) is configured as a light shielding strip (40, 100) which extends around a film strip (26) coiled on a supply spool (25) within the film cartridge (20). The light shielding strip (40, 100) has a first end portion (44, 102) for covering the film slot (33) and a second end portion (54) for engagement by the film lead (56) of the film strip (26). When the film strip (26) is initially advanced, detents (64) on the light shielding strip (26) are engaged temporarily by teeth (66) on the supply spool (25) to pull the light shielding strip (26) open so that the film strip (26) projects from the cartridge (20). Upon rewinding the film strip (26), a film lead portion (56) of the film strip (26) engages other detents (72, 142) on the light shielding strip (40, 100) to push the light shielding strip (40, 100) back over the film slot (33) to thereby again close the film slot (33).

Abstract: The angle ".alpha." which an illumination axis of an illuminator, such as a flash illuminator, assumes with respect to the optical axis of a camera in a bounce flash mode is selected in accordance with the equation:.alpha.=Tan.sup.-1 (2H/D)wherein;H=the distance from the camera to the ceiling; andD=the distance from the lens of the camera to the subject.Preferably, values for H and D are determined by range finders on the camera and the equation is solved by a logic circuit. The output of the logic circuit causes a servo motor to angularly position the illuminator on the camera.

Abstract: Compounds of formula I ##STR1## wherein A is nitrogen or a group CR.sup.5 ;each of R.sup.1, R.sup.2 and R.sup.5 is, independently, hydrogen, halogen, formyl, cyano, carboxy, azido or optionally substituted alkyl, alkenyl, alkynyl, cycloalkyl, alkoxy, alkenyloxy, alkynyloxy, aryloxy, alkylthio, alkenylthio, alkynylthio, arylthio, alkylcarbonyl, alkoxycarbonyl, amino, aminoxy or dialkyliminoxy; andR is ##STR2## in which R.sup.3 is hydrogen, optionally substituted alkyl, alkenyl, alkynyl, cycloalkyl, heterocyclic or aryl, or COR.sup.8, R.sup.8 being hydroxy, alkoxy, carboxy, alkoxycarbonyl, amino or mono- or di- alkylamino; andR.sup.4 is a group COR.sup.6 wherein R.sup.6 is hydrogen, halogen, hydroxy, or optionally substituted alkoxy, alkenyloxy, alkynyloxy, cycloalkoxy, aryloxy, alkylthio, alkenylthio, alkynylthio, arylthio, aminoxy, dialkyliminoxy or amino, or R.sup.6 is a group OR.sup.7 in which R.sup.7 is an optionally substituted heterocyclic ring; or ##STR3## each of R.sup.9 and R.sup.

Abstract: Compounds of the formula: ##STR1## wherein X, Y and Z are hydrogen, halogen, alkyl, haloalkyl, hydroxy, alkoxyalkyl, alkoxy, haloalkoxy, cycloalkyl, substituted aryl, alkylthio, arylthio, substituted amino or --CO.sub.2 R.sup.7, wherein R.sup.7 is hydrogen, optionally substituted alkyl, cycloalkyl, aryl or aralkyl, or X and Y together or Y and Z together form a ring R.sup.1 is --A--CH.dbd.CHCH.sub.3, --A--C.tbd.CCH.sub.3, --A--CH.sub.2 CH.dbd.CH.sub.2, --A--CH.sub.2 C.tbd.CH, --A(CH.sub.2).sub.n Br, --A(CH.sub.2).sub.n B(CH.sub.2).sub.m BR, ##STR2## or --A(CH.sub.2).sub.n R.sup.8, optionally substituted wherein A and B are --O--, --S-- or --NR, B.sup.1 is a direct bond, --O--, --S-- or --NR, n and m are integers from 1 to 3, p is 0, 1 or 2, R is hydrogen, optionally substituted alkyl, cycloalkyl, aryl or aralkyl and R.sup.8 is optionally substituted aryl;R.sup.2 to R.sup.4, each are hydrogen, halogen, alkyl, alkoxy or --CO.sub.2 R.sup.7 ;R.sup.

Abstract: A radio frequency (RF) glow discharge plasma etch electrode design is disclosed which is capable of creating high power density plasma with uniform etch rates, while providing access for automatic loading semiconductor wafers from outside of the plasma region. The electrode assembly comprises of an electrode to which RF energy is applied surrounded by an insulator, which in turn surrounded a grounded surface all of which have cylindrical symmetry. When placed a small distance from a flat, grounded substrate, the electrode assembly creates a volume which can effectively combine a high power density plasma, while maintaining a sufficient channel for pumping a gas flow and for observing the plasma optically. The same channel is widened for automatic transport of semiconductor wafers from outside of the plasma reactor chamber. Such confined high power density plasma are important for high rate, uniform, anisotropic etching, especially for silicon dioxide.

Abstract: A photographic camera includes a lens adjustable to different focus distances, means for supplying a flash illumination, and a rangefinder for indicating the distance to a subject as one of at least two zones. The camera is operable in a flash mode or a non-flash mode. A ratchet is provided defining at least three consecutive teeth connected to the lens, each one of the ratchet teeth defining a focus setting for the lens, the focus settings ranging from a relatively near focus setting to a relatively distant focus setting. A pawl is provided for engaging a selected one of the ratchet teeth to fix the focus of the lens at the focus distance associated with the selected ratchet tooth.

Abstract: In semiconductor treatment apparatus with a plasma generating zone, a treatment zone, and a bent path connecting the two so as to block direct transmission of ultraviolet light from the plasma generating zone to the workpiece in the treatment zone, a light trap is provided to suppress indirect transmission of light as by reflection or by transmission within transparent walls of a conduit defining the bent path.

Abstract: A syringe with a body and a needle at one end and an injection plunger movable into the body at the opposite end. A guide lug is fixed on the syringe body near the needle end. A sheath is positioned over the syringe body with a longitudinal groove that engages the guide lug. The sheath is movable with respect to the syringe body and guided by the lug so that it can selectively cover or expose the needle while not impeding use of the syringe.

Abstract: A disk film camera which is of simple, compact and inexpensive construction and yet provides one-button operation to expose the film and actuate a motor which disengages the film and cocks the shutter, then advances and locates the film. A demetering cam that is simpler and takes less space in the camera is used to remove the metering pawl from engagement with the film to permit the film to be advanced.

Abstract: A microwave apparatus for generating plasma afterglows for stripping and/or etching of photoresist and semiconductor material at a sufficiently high rate to allow single wafer processing in a fully automated reactor. The apparatus includes a stripping/etching chamber for plasma afterglow stripping of photoresist and selective isotropic etching of semiconductor material, such as polysilicon and silicon nitride, using a variety of etchant compositions which form reactive species in a plasma. In addition, the apparatus may be employed for anisotropic etching for semiconductive material by decoupling etchant generation from ion production and acceleration by using two plasma sources, i.e., microwave power and radio frequency (RF) power. Anisotropic etching is carried out in an etching chamber which subjects, in situ, a plasma afterglow to RF power and which is designed to operate in the reactive ion etch mode.

Abstract: A plasma etch system that processes one slice at a time is disclosed. The system is comprised of an entry loadlock, an exit loadlock, a main chamber, vacuum pumps, RF power supply, RF matching network, a heat exchanger, throttle valve and pressure control gas flow distribution and a microprocessor controller. A multiple slice cassette full of slices is housed in the entry load lock and after pumping to process pressure, a single slice at a time is moved by an articulated arm from the cassette through an isolation gate to the main process chamber. The slice is etched and removed from the main process chamber through a second isolation gate by a second articulated arm to a cassette in the exit loadlock. The process is repeated until all semiconductor wafers have been etched.

Abstract: An electrode and substrate assembly for a plasma reactor allows high power plasma processing with low frequency excitation. The electrode sub-assembly is contained in a chamber which is used for pre-treatment such as de-scumming photoresist or for post-etch resist stripping and passivation. A post-etch treatment is essential in plasma aluminum etching.

Abstract: A plasma reactor for the manufacturing of semiconductor devices has powered loadlocks and a main process chamber where slices can be processed one slice at a time with pre-etch plasma treatments before the main etching processing and afterwards receive a post etch treatment. The system comprises powered loadlocks, a main chamber, vacuum pumps radio frequency power supplier, radio frequency matching networks, heat exchangers and throttle valve and pressure controllers, gas flow distribution and microprocessor controllers. The semiconductor wafers are automatically fed one at a time from storage cassettes through isolation gates with articulated mechanical arms to a powered entry loadlock for pre-etching processes. At the completion of the pre-etching processing, the semiconductor wafer is transferred to the main chamber automatically for the main etch process and then to the powered exit loadlock for post etch treatment and finally to an output cassette.

Abstract: A substrate to use as electrode in a plasma etch reactor is fabricated from aluminum with an annulus that is anodized to protect it from being exposed to the plasma.

Abstract: A plasma etch system that processes one slice at a time is disclosed. The system is comprised of an entry loadlock, an exit loadlock, a main chamber, vacuum pumps, RF power supply, RF matching network, a heat exchanger, throttle valve and pressure control gas flow distribution and a microprocessor controller. A multiple slice cassette full of slices is housed in the entry load lock and after pumping to process pressure, a single slice at a time is moved by an articulated arm from the cassette through an isolation gate to the main process chamber. The slice is etched and removed from the main process chamber through a second isolation gate by a second articulated arm to a cassette in the exit loadlock. The process is repeated until all semiconductor wafers have been etched.

Abstract: A magnetron plasma reactor wherein the susceptor is an aluminum arm extending into approximately the middle of a solenoidal magnetic field generated by a dc current.

Abstract: A disk film camera which is of simple, compact and inexpensive construction and yet which provides one-button operation to locate the film, expose the film, disengage the film and advance the next frame. The camera requires no separate operation to initialize a cartridge when it is loaded into the camera. A photographer is free to change his mind about taking a picture at any time after moving the shutter button until the shutter is actually released, without adversely affecting the operation of the camera, such as by jamming it or by placing any component of the camera (such as a spring) in a stressed condition for an indeterminate period of time.