Abstract: This disclosure relates to an electron beam generator having a high brightness electron beam source and a focusing lens placed between the source and the target area to provide a large image focal distance relative to the object focal distance. In addition, two sets of deflection coils or plates are placed between the focusing means and the target where the first deflection means provides that deflection required for generation of the desired pattern and the second deflection means between the first deflection means and the target then deflects the beam back to a path normal to the target surface.

Abstract: A method of making a pattern for a photolithographic mask. A field ion source is advantageously utilized to produce heavy ions with a high beam current density. The ions are accelerated and directly bombard a metallic coating on the mask substrate to form openings therein in the desired pattern.

Abstract: This disclosure relates to an electron beam generator and focusing mechanism including a high current thermionic field emission source to establish a high current electron beam and an electro-magnetic focusing means placed along the axis of the electron beam between the source and the target so as to provide a large image focal distance with the electron beam source being formed of a tungsten cathode which is coated with zirconium.