Abstract: A process to remove H2S from a stream comprising the steps of adding a dispersion of colloidal nanoparticles having surface functionality comprising Copper, Zinc, Iron, or Manganese, and a triazine. The stream is selected from the group consisting of Oil streams, Gas streams, CO2 point source purification streams, and Geothermal Energy System streams.

Abstract: Colloidal nanoparticle dispersions. wherein said nanoparticles are selected from the group consisting of silica. alumina or silica aluminate nanoparticles and wherein said nanoparticles are surface-functionalized with an organosilane having organomercaptan functionality are described and claimed. Uses for these new colloidal nanoparticle dispersions include enhancing the performance of items made with resin formulations used in Thiolene-cure UV-curable materials.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

Abstract: A method to reduce the deposition of solid sulfur (S8(s)) in a natural gas producing well is described where hydrophobic surface modified silica nanoparticles are added into the tubing string, and the hydrophobic surface modified silica nanoparticles interact with the gaseous sulfur (S8(g)) present in the gas resulting in the reduction of the deposition of solid sulfur (S8(s)), The hydrophobic surface modified silica nanoparticles are selected from the group that includes silica, alumina and silica-aluminate. The hydrophobic surface modified silica nanoparticles may be added to the tubing string either dry or mixed first into a carrier fluid, which carrier fluid may be a liquid or a gas.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

Abstract: A process to remove H2S from a stream comprising the steps of adding Melamine cyanurate, optionally a silica nanoparticle composition, and optionally a triazine. The stream is selected from the group consisting of Oil streams, Gas streams, CO2 point source purification streams and Geothermal Energy System streams.

Abstract: A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position.

Abstract: A method to reduce the deposition of solid sulfur (Ss(s)) in a natural gas producing well, is described wherein the inside of the pipes used in the well are coated with a coating comprising polar surface treated nanoparticles. The polar surface treated nanoparticles interact with the sulfur gas and interfere with the deposition of solid sulfur onto the surface of the pipe. The polar surface treated nanoparticles are selected from the group consisting of silica, alumina and silica-aluminate, metal sulfates and metal oxides.

Abstract: A process to remove H2S from a stream is described and claimed. The process comprises the steps of adding an amine-functionalized silica nanoparticle composition, and optionally a iriazine. The stream is selected from the group consisting of Oil streams, Gas streams, CO2 point source purification streams and Geothermal Energy System streams.

Abstract: A process to remove H2S from a stream comprising the steps of adding a silica nanoparticle composition and optionally a triazine, wherein the stream is selected from the group consisting of Oil streams, Gas streams, CO2 point source purification streams and Geothermal Energy System streams.

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 ?m thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

Abstract: A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position.

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 ?m thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

Abstract: A process to remove H2S from a stream comprising the steps of adding a glyoxal, a silica nanoparticle composition, and optionally a triazine to the stream. The stream is selected from the group consisting of Oil streams, Gas streams, CO2 point source purification streams and Geothermal Energy System streams.

Abstract: A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within ±5 degrees of perpendicular to the <1120> direction of a hexagonal crystal structure of a material of the substrate.

Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

Abstract: A method to reduce the deposition of solid sulfur (Ss(s)) in a natural gas producing well, is described wherein the inside of the pipes used in the well are coated with a coating comprising polar surface treated nanoparticles. The polar surface treated nanoparticles interact with the sulfur gas and interfere with the deposition of solid sulfur onto the surface of the pipe. The polar surface treated nanoparticles are selected from the group consisting of silica, alumina and silica-aluminate, metal sulfates and metal oxides.

Abstract: A method to reduce the deposition of solid sulfur (S8(s)) in a natural gas producing well is described where hydrophobic surface modified silica nanoparticles are added into the tubing string, and the hydrophobic surface modified silica nanoparticles interact with the gaseous sulfur (S8(g)) present in the gas resulting in the reduction of the deposition of solid sulfur (S8(s)), The hydrophobic surface modified silica nanoparticles are selected from the group that includes silica, alumina and silica-aluminate. The hydrophobic surface modified silica nanoparticles may be added to the tubing string either dry or mixed first into a carrier fluid, which carrier fluid may be a liquid or a gas.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.