Patents by Inventor John Edwards Sheets, II

John Edwards Sheets, II has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8300450
    Abstract: A method and embedded dynamic random access memory (EDRAM) circuit for implementing a physically unclonable function (PUF), and a design structure on which the subject circuit resides are provided. An embedded dynamic random access memory (EDRAM) circuit includes a first EDRAM memory cell including a memory cell true storage capacitor and a second EDRAM memory cell including a memory cell complement storage capacitor. The memory cell true storage capacitor and the memory cell complement storage capacitor include, for example, trench capacitors or metal insulator metal capacitors (MIM caps). A random variation of memory cell capacitance is used to implement the physically unclonable function. Each memory cell is connected to differential inputs to a sense amplifier. The first and second EDRAM memory cells are written to zero and then the first and second EDRAM memory cells are differentially sensed and the difference is amplified to consistently read the same random data.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: October 30, 2012
    Assignee: International Business Machines Corporation
    Inventors: Todd Alan Christensen, John Edwards Sheets, II
  • Publication number: 20120106235
    Abstract: A method and embedded dynamic random access memory (EDRAM) circuit for implementing a physically unclonable function (PUF), and a design structure on which the subject circuit resides are provided. An embedded dynamic random access memory (EDRAM) circuit includes a first EDRAM memory cell including a memory cell true storage capacitor and a second EDRAM memory cell including a memory cell complement storage capacitor. The memory cell true storage capacitor and the memory cell complement storage capacitor include, for example, trench capacitors or metal insulator metal capacitors (MIM caps). A random variation of memory cell capacitance is used to implement the physically unclonable function. Each memory cell is connected to differential inputs to a sense amplifier. The first and second EDRAM memory cells are written to zero and then the first and second EDRAM memory cells are differentially sensed and the difference is amplified to consistently read the same random data.
    Type: Application
    Filed: November 3, 2010
    Publication date: May 3, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Todd Alan Christensen, John Edwards Sheets, II