Patents by Inventor John F. Donohue

John F. Donohue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching process for producing substantially undercut free silicon on insulator structures
    Patent number: 6071822
    Abstract: A method of anisotropically plasma etching a silicon on insulator substrate wherein undercutting is substantially eliminated by utilizing as a finishing etch step a reactive ion etching process wherein the ion density is reduced in order to limit ion charging through different size recesses in order to uniformly etch in a vertical direction.
    Type: Grant
    Filed: July 31, 1998
    Date of Patent: June 6, 2000
    Assignee: Plasma-Therm, Inc.
    Inventors: John F. Donohue, David J. Johnson, Michael W. Devre
  • Electrode with domes for plasma focusing
    Patent number: 6010636
    Abstract: An improved anode design, incorporating domes, for plasma reactors enhances plasma density at the anode. The domes give rise to a high-divergence, three-dimensional electric field distribution that accelerates electrons to a focused central region in the dome, thereby increasing ionization and dissociation. The enhanced plasma density increases the reaction rate at a substrate opposite the anode.
    Type: Grant
    Filed: December 29, 1995
    Date of Patent: January 4, 2000
    Assignee: Lam Research Corporation
    Inventors: John F. Donohue, Al Sampson