Abstract: A high temperature resist process is combined with microlithographic patterning for the production of materials, such as diamond films, that require a high temperature deposition environment. For diamond films, a high temperature silicon nitride resist can be used for microlithographic patterning of a silicon substrate to provide a uniform distribution of diamond nucleation sites and to improve diamond film adhesion to the substrate. A fine-grained nucleation geometry, established at the nucleation sites, is maintained as the diamond film is deposited over the entire substrate after the silicon nitride resist is removed. The process can be extended to form surface relief features, such as "moth eye" surfaces, and microstructures of fine-grained polycrystalline diamond, such as rotatable microgears and surface relief patterns, that have the desirable characteristics of hardness, wear resistance, thermal conductivity, chemical inertness, anti-reflectance, and a low coefficient of friction.

Abstract: A high temperature resist process is combined with microlithographic patterning for the production of materials, such as diamond films, that require a high temperature deposition environment. A conventional polymeric resist process may be used to deposit a pattern of high temperature resist material. With the high temperature resist in place and the polymeric resist removed, a high temperature deposition process may proceed without degradation of the resist pattern. After a desired film of material has been deposited, the high temperature resist is removed to leave the film in the pattern defined by the resist. For diamond films, a high temperature silicon nitride resist can be used for microlithographic patterning of a silicon substrate to provide a uniform distribution of diamond nucleation sites and to improve diamond film adhesion to the substrate.

Abstract: A process is disclosed for producing a substantially sulphur-free, butene-1 rich stream from a butene-containing C.sub.4 hydrocarbon feed stream by passage through a desulphurization zone, e.g. successive beds of active alumina and zinc oxide, and then distilling it. The desulphurization zone adsorbs, absorbs or converts to higher boiling sulphurous compounds low boiling sulphurous impurities such as H.sub.2 S, COS and CH.sub.3 SH. A sulphur-free butene-1 rich stream is recovered overhead from the distillation zone, while a butene-2 rich stream containing higher boiling sulphurous impurities originally present or produced in the desulphurization zone is recovered as a bottom product. A dechlorination zone (containing, for example, a charge of copper impregnated active carbon) can be provided upstream or downstream from the desulphurization zone but upstream from the distillation zone or can be provided in the path of the butene-1 rich stream from the distillation zone.

Abstract: Sodium sulfate is purged from a sulfur dioxide removal system involving contact of a sulfur dioxide-containing gas with a solution containing sodium sulfite to absorb sulfur dioxide from the gas. The spent absorbing solution is regenerated by desorbing sulfur dioxide and recycled for further use. To avoid an unduly large build-up of sulfate in the system, at least a portion of the absorbing-desorbing medium, e.g. spent absorbing solution, containing sodium sulfate and a relatively large amount of sodium bisulfite is treated to reduce the amount of water in the medium so that there is precipitated therefrom up to about 10 weight percent undissolved solids containing sodium sulfate in greater concentration than would otherwise be obtained in the absorption-desorption cycle. The insolubles containing sodium sulfate are removed from the liquid, and the liquid can be returned to the sulfur dioxide removal system.

Abstract: Sodium sulfate is purged from a sulfur dioxide removal system involving contact of a sulfur dioxide-containing gas with a solution containing sodium sulfite to absorb sulfur dioxide from the gas. The spent absorbing solution is regenerated by desorbing sulfur dioxide, and recycled for further use. To avoid an unduly large build-up of sulfate in the system, a portion of the absorbing-desorbing medium, e.g., spent absorbing solution, containing sodium sulfate, a relatively large amount of sodium bisulfite, and generally a minor amount of sodium sulfite, is treated to precipitate solids containing sodium sulfate in a concentration which is greater on a dry basis than would otherwise be obtained in the absorption-desorption cycle. The concentration of sodium sulfate in the precipitated solids is increased by providing a portion of the precipitated sodium sulfate-containing solids, e.g. about 25 to 75 weight percent, in solution in the absorbing-desorbing medium treated for sulfate removal.

Abstract: Sodium sulfate is purged from a sulfur dioxide removal system involving contact of a sulfur dioxide-containing gas with a solution containing sodium sulfite to absorb sulfur dioxide from the gas. The spent absorbing solution is regenerated by desorbing sulfur dioxide and recycled for further use. To avoid an unduly large build-up of sulfate in the system, at least a portion of the absorbing-desorbing medium containing sodium sulfate and a relatively large amount of sodium bisulfite, e.g. spent absorbing solution, is contacted with a treating gas containing at least a small amount of sulfur dioxide while reducing the amount of water in the medium so that a slurry is obtained having up to about 10, or even up to about 20, weight percent precipitated solids containing sodium sulfate in greater concentration than would otherwise be obtained in the absorption-desorption cycle. Preferably, the sulfur dioxide-containing treating gas is unsaturated with respect to water.