Patents by Inventor John F. Miner

John F. Miner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming oxide layers by bias ECR plasma deposition
    Patent number: 5124014
    Abstract: A method of forming silicon dioxide layers by bias ECR is described. The layers are formed by reacting oxygen with TEOS or TMCTS. High-quality, void-free layerc can be formed over conductor patterns having high-aspect-ratio intermetallic spacings.
    Type: Grant
    Filed: April 11, 1991
    Date of Patent: June 23, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: Pang-Dow Foo, Ajit S. Manocha, John F. Miner, Chien-Shing Pai