Abstract: A counterflow mixing device for a process chamber is disclosed, comprising an injection tube that introduces a fluid in a manner counter to a flow of a post-plasma gas mixture traveling downward from a plasma source. The invention allows for proper mixing of the fluid as well as avoiding recombination of generated ions and radicals.

Abstract: A counterflow mixing device for a process chamber is disclosed, comprising an injection tube that introduces a fluid in a manner counter to a flow of a post-plasma gas mixture traveling downward from a plasma source. The invention allows for proper mixing of the fluid as well as avoiding recombination of generated ions and radicals.

Abstract: In one embodiment, a method for forming a direct fusion bond between fractional components of a semiconductor laminate structure can include generating one or more direct bonding surfaces on each of a plurality of semiconductor wafers. A first fractional component and a second fractional component can be cut from at least one of the plurality of semiconductor wafers. A second direct bonding surface of the second fractional component can be placed into contact with a first direct bonding surface of the first fractional component to define an initial contact area. An angle of approach between the second direct bonding surface of the second fractional component and the first direct bonding surface of the first fractional component can be closed to create a direct fusion bond of a semiconductor laminate structure. The direct fusion bond can be larger than the initial contact area.

Abstract: In one embodiment, a method for forming a direct fusion bond between fractional components of a semiconductor laminate structure can include generating one or more direct bonding surfaces on each of a plurality of semiconductor wafers. A first fractional component and a second fractional component can be cut from at least one of the plurality of semiconductor wafers. A second direct bonding surface of the second fractional component can be placed into contact with a first direct bonding surface of the first fractional component to define an initial contact area. An angle of approach between the second direct bonding surface of the second fractional component and the first direct bonding surface of the first fractional component can be closed to create a direct fusion bond of a semiconductor laminate structure. The direct fusion bond can be larger than the initial contact area.

Abstract: A method of ductile mode machining a component of a plasma processing apparatus wherein the component is made of nonmetallic hard and brittle material wherein the method comprises single point turning the component with a diamond cutting tool causing a portion of the nonmetallic hard and brittle material to undergo a high pressure phase transformation to form a ductile phase portion of the hard and brittle material during chip formation wherein a turned surface is formed from a phase changed material and the turned surface is a grooved textured surface of phase changed material.

Abstract: Methods and liquid sonification systems configured to clean at least one hole of an article. The methods comprise establishing at least one pressure gradient within the at least one hole to move particles proximate to a node of a standing wave toward an antinode of the standing wave, the standing wave having an axis of propagation parallel to the central axis of the at least one hole. The methods may, in some embodiments, comprise establishing one or more sites of cavitation within the at least one hole.

Abstract: A method of ductile mode machining a component of a plasma processing apparatus wherein the component is made of nonmetallic hard and brittle material wherein the method comprises single point turning the component with a diamond cutting tool causing a portion of the nonmetallic hard and brittle material to undergo a high pressure phase transformation to form a ductile phase portion of the hard and brittle material during chip formation wherein a turned surface is formed from a phase changed material and the turned surface is a grooved textured surface of phase changed material.

Abstract: A transducer system includes a plurality of transducer elements formed on a flexible substrate with localized circuit elements and interconnects associated with each transducer element.

Abstract: A motion capture system includes at least four relatively positioned locating units defining an area; an RFID fiducial moving with a movable object within the vicinity of the defined area; the locating units receiving RF signals transmitted by the RFID fiducial; and a processing unit in communication with the locating units and the RFID fiducial, the processing unit transmitting RF signals to the RFID fiducial and receiving information from the locating units in response to the transmitted RF signals and determining a location of the RFID fiducial.

Abstract: A transducer system includes a plurality of transducer elements formed on a flexible substrate with localized circuit elements and interconnects associated with each transducer element.

Abstract: In accordance with one embodiment of the invention, a load cup mechanism is provided for loading and unloading apparatus such as a CMP apparatus. The load cup mechanism, configured to load a work piece into and to unload a work piece from the apparatus, comprises a load cup arm configured to pivot about an axis between a load position aligned with the apparatus and an off-load position. A work piece platform is coupled to an end of the load cup arm and a plurality of lift fingers and a plurality of guide fingers, configured to support and center a work piece, are spaced about the work piece platform. A plurality of guide posts are spaced apart about the periphery of the work piece platform and are configured to align the work piece platform, in the load position, to the processing apparatus.

Abstract: Methods and apparatus are provided for the chemical mechanical planarization (CMP) of a surface of a work piece. In accordance with one embodiment of the invention the apparatus comprises a plurality of CMP systems, a plurality of load cups for loading unprocessed work pieces into and unloading processed work pieces from the plurality of CMP systems, a plurality of cleaning stations for cleaning processed work pieces unloaded from the CMP systems, and a single robot configured to transfer unprocessed work pieces to the plurality of load cups and to transfer processed work pieces from the load cups to the plurality of cleaning stations.

Abstract: Components of chemical, mechanical, polishing apparatus with components resistant to chemical attack by chemical slurries used in the polishing of semiconductor wafers. Among the components that are improved to enhance resistance to chemical attack are the polishing platen, pad conditioning end effectors, various subassemblies, housings for instrumentation, carrier rinse station surfaces, and other components that come into contact with a slurry. The coating compositions are preferably tightly adherent to the underlying substrate, and may be applied by a wide range of techniques. Especially useful are coatings such as tungsten carbide, tungsten nitride, amorphous diamond like carbon, and other such inert wear resistant coatings.