Patents by Inventor John F. Wager, III

John F. Wager, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor structures and methods for making the same
    Patent number: 7888207
    Abstract: Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO2, the substantially insulating ZnO or SnO2 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
    Type: Grant
    Filed: February 5, 2007
    Date of Patent: February 15, 2011
    Assignee: State of Oregon Acting by and through the Oregon State Board of Higher Eduacation on behalf of Oregon State University
    Inventors: John F. Wager, III, Randy L. Hoffman
  • Transistor structures
    Patent number: 7339187
    Abstract: Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO2, or In2O3. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnO2 or In2O3, the substantially insulating ZnO, SnO2, or In2O3 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
    Type: Grant
    Filed: January 24, 2003
    Date of Patent: March 4, 2008
    Assignee: State of Oregon acting by and through the Oregon State Board of Higher Education on behalf of Oregon State University
    Inventors: John F. Wager, III, Randy L. Hoffman
  • Transistor structures having a transparent channel
    Patent number: 7189992
    Abstract: Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO2, the substantially insulating ZnO or SnO2 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: March 13, 2007
    Assignee: State of Oregon acting by and through the Oregon State Board of Higher Education on behalf of Oregon State University
    Inventors: John F. Wager, III, Randy L. Hoffman