Abstract: Methods and apparatus to upgrade and control information presented to process plant operators are disclosed. A disclosed example method to control information presented to a process plant operator comprises presenting a first version of a process plant display, presenting a dynamic attention user interface when a selectable element of the first version of the process plant operator display is activated, wherein the dynamic attention user interface is to be used to adjust an importance of information presented in the first version of the process plant display, and presenting a second version of the process plant display based on a variable adjusted via the dynamic attention user interface.

Abstract: Methods for processing a contact surface, for example to provide a gas barrier or lubricity or to modify the wetting properties on a medical device, are disclosed. First and second PECVD or other contact surface processing stations or devices and a contact surface holder comprising a contact surface port are provided. An opening of the contact surface can be seated on the contact surface port. The interior contact surface of the seated contact surface can be processed via the contact surface port by the first and second processing stations or devices. contact surface barrier, lubricity and hydrophobic coatings and coated contact surfaces, for example syringes and medical sample collection tubes are disclosed. A contact surface processing system and contact surface inspection apparatus and methods are also disclosed.

Abstract: A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.

Abstract: The present invention refers to an apparatus for the plasma treatment of hollow bodies, comprising a vacuum treatment chamber and means for generating the plasma, which apparatus is characterized in that the means for generating the plasma comprise an electrode of a substantially U-shaped cross-section, which is arranged in the vacuum treatment chamber, the hollow bodies immersing at least in part into the U-shaped electrode when the plasma treatment is carried out, and being moved at least temporarily relative to the U-shaped electrode.

Abstract: A device for supplying a large number of consumer stations with a predetermined amount of a process medium, in particular a coating device for containers, has a supply line for the process medium and a connection at the consumer station. In order to make such a device simpler from the structural point of view and less expensive, a unit is used, which keeps a predetermined flow rate constant and which comprises a capillary path extending before each connection and dimensioned in accordance with the predetennined amount of process medium, and a unit which is associated with a plurality of connections and which is used for maintaining a defined flow velocity along the capillary path.

Abstract: Methods and apparatus to upgrade and control information presented to process plant operators are disclosed. A disclosed example method to control information presented to a process plant operator comprises presenting a first version of a process plant display, presenting a dynamic attention user interface when a selectable element of the first version of the process plant operator display is activated, wherein the dynamic attention user interface is to be used to adjust an importance of information presented in the first version of the process plant display, and presenting a second version of the process plant display based on a variable adjusted via the dynamic attention user interface.

Abstract: A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.

Abstract: A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.

Abstract: A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.

Abstract: A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.

Abstract: Internet-based enhanced radio. The radio appliance, through a network interface and Internet service provider, accesses a tuning service built upon a plurality of databases. The tuning service, databases, and related enhanced services provide the listener a variety of services, complimenting AM/FM radio broadcasts and Internet radio media stream broadcasts. The radio appliance user can request additional information concerning advertised products, identify and purchase soundtracks and CDs, purchase advertised products, and respond to market research polling and surveys. The tuning service and related enhanced services can monitor, collect, process, and store user music preferences, polling and survey results, user behavior statistics, and purchase and information requests. Market research and subscriber information is stored, retrieved, and updated in databases accessible to the tuning service.

Abstract: A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si--O--Si or Si--N--Si groups with organic side groups attached to the backbone.