Abstract: A design structure for a cache memory system (200) having a cache memory (204) partitioned into a number of banks, or “ways” (204A, 204B). The memory system includes a power controller (244) that selectively powers up and down the ways depending upon which way contains the data being sought by each incoming address (232) coming into the memory system.

Abstract: A keeper device design structure for dynamic logic used in integrated circuit designs includes a first keeper path statically coupled to a dynamic data path, the first keeper path configured to prevent false discharge of the dynamic data path during an evaluation thereof, and a second keeper path selectively coupled to the dynamic data path. The second keeper path is configured to maintain the dynamic data path at a nominal precharge level prior to an evaluation thereof, wherein the second keeper path is decoupled from the dynamic data path during the evaluation.

Abstract: A differential fuse sensing system includes a fuse leg configured for introducing a sense current through an electrically programmable fuse (eFUSE) to be sensed, and a differential sense amplifier having a first input node coupled to the fuse leg and a second node coupled to a reference voltage. The fuse leg further includes a current supply device controlled by a variable reference current generator configured to generate an output signal therefrom such that the voltage on the first input node of the sense amplifier is equal to the voltage on the second input node of the sense amplifier whenever the resistance value of the eFUSE is equal to the resistance value of a programmable variable resistance device included within the variable reference current generator.

Abstract: A design structure for designing and manufacturing a programmable device. The design structure includes a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having first and second ends, and an upper surface S; the first end (12a) is substantially wider than the second end (12b), and a metallic material is disposed on the upper surface; the metallic material being physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and the metallic material.

Abstract: A keeper device for dynamic logic includes a first keeper path statically coupled to a dynamic data path, the first keeper path configured to prevent false discharge of the dynamic data path during an evaluation thereof, and a second keeper path selectively coupled to the dynamic data path. The second keeper path is configured to maintain the dynamic data path at a nominal precharge level prior to an evaluation thereof, wherein the second keeper path is decoupled from the dynamic data path during the evaluation.

Abstract: A compiler is provided for compiling at least one array or bank unit of a DRAM macro such that electrical performance, including cycle time, access time, setup time, among other properties, is optimized. The compiler compiles the DRAM macro according to inputted information. The compiler receives an input capacity and configuration for the DRAM macro. A compiler algorithm determines a number of wordlines and bitlines required to create the DRAM macro of the input capacity. The compiler algorithm optimizes the cycle time and access time of the DRAM macro by properly configuring a support unit of the DRAM macro based upon the number of wordlines and bitlines.

Abstract: A programmable device includes a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having first and second ends, and an upper surface S; the first end (12a) is substantially wider than the second end (12b), and a metallic material is disposed on the upper surface; the metallic material being physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and the metallic material.

Abstract: Techniques and systems whereby operation of and/or access to particular features of an electronic device may be controlled after the device has left the control of the manufacturer are provided. The operation and/or access may be provided based on values stored in non-volatile storage elements, such as electrically programmable fuses (eFUSES).

Abstract: A design structure comprising a static random access memory (SRAM) (200, 400) comprising a plurality of SRAM cells (204), a plurality of wordlines (WL0-WLN) and a voltage regulator (240, 240?, 300, 516) for driving the wordlines with a wordline voltage signal (VWLP). The wordline voltage signal is determined so as to reduce the likelihood of occurrence of read-disturbances and other memory instabilities. In one embodiment, the wordline voltage signal is determined as a function of the metastability voltage (VMETA) of the SRAM cells and an adjusted most positive down level voltage (VAMPDL) that is a function of a predetermined voltage margin (VM) and a most positive down level voltage (VMPDL) that corresponds to the read-disturb voltage of the SRAM cells.

Abstract: A keeper device for dynamic logic includes a first keeper path statically coupled to a dynamic data path, the first keeper path configured to prevent false discharge of the dynamic data path during an evaluation thereof, and a second keeper path selectively coupled to the dynamic data path. The second keeper path is configured to maintain the dynamic data path at a nominal precharge level prior to an evaluation thereof, wherein the second keeper path is decoupled from the dynamic data path during the evaluation.

Abstract: Techniques and systems whereby operation of and/or access to particular features of an electronic device may be controlled after the device has left the control of the manufacturer are provided. The operation and/or access may be provided based on values stored in non-volatile storage elements, such as electrically programmable fuses (eFUSES).

Abstract: An SRAM cell with gate tunneling load devices. The SRAM cell uses PFET wordline transistors and NFET cross-coupled transistors. The PFET wordline transistors are fully conductive during read operations, thus a full voltage level is passed through the PFET to the high node of the cell from the bitline. Tunnel current load devices maintain the high node of the cell at full voltage level during standby state.

Abstract: An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F) located between the bias and antifuse elements. When the antifuse device is in its unprogrammed state, each of the bias element and antifuse element is non-conductive. When the antifuse device is in its programmed state, the bias element remains non-conductive, but the antifuse element is conductive. The difference in the resistance of the antifuse element between its unprogrammed state and programmed state causes the difference in voltages seen at the output node to be on the order of hundreds of mili-volts when a voltage of 1 V is applied across the antifuse device. This voltage difference is so high that it can be readily sensed using a simple sensing circuit (228).

Abstract: A cache memory system (200) having a cache memory (204) partitioned into a number of banks, or “ways” (204A, 204B). The memory system includes a power controller (244) that selectively powers up and down the ways depending upon which way contains the data being sought by each incoming address (232) coming into the memory system.

Abstract: An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F) located between the bias and antifuse elements. When the antifuse device is in its unprogrammed state, each of the bias element and antifuse element is non-conductive. When the antifuse device is in its programmed state, the bias element remains non-conductive, but the antifuse element is conductive. The difference in the resistance of the antifuse element between its unprogrammed state and programmed state causes the difference in voltages seen at the output node to be on the order of hundreds of mili-volts when a voltage of 1 V is applied across the antifuse device. This voltage difference is so high that it can be readily sensed using a simple sensing circuit (228).

Abstract: A memory is provided which can be operated at an active rate of power consumption in an active operational mode and at a predetermined reduced rate of power consumption in a standby operational mode. The memory includes a current generating circuit which is operable to supply a predetermined magnitude of current to a sample power supply input terminal of a sample memory cell representative of memory cells of the memory, the predetermined magnitude of current corresponding to the predetermined reduced rate of power consumption. A voltage follower circuit is operable to output a standby voltage level equal to a voltage level at the sample power supply input terminal when the predetermined magnitude of current is supplied thereto. A memory cell array of the memory is operable to store data. In the standby operational mode, a switching circuit is operable to supply power at the standby voltage level to a power supply input terminal of the memory cell array.

Abstract: A static random access memory (SRAM) (200, 400) comprising a plurality of SRAM cells (204), a plurality of wordlines (WL0-WLN) and a voltage regulator (240, 240?, 300, 516) for driving the wordlines with a wordline voltage signal (VWLP). The wordline voltage signal is determined so as to reduce the likelihood of occurrence of read-disturbances and other memory instabilities. In one embodiment, the wordline voltage signal is determined as a function of the metastability voltage (VMETA) of the SRAM cells and an adjusted most positive down level voltage (VAMPDL) that is a function of a predetermined voltage margin (VM) and a most positive down level voltage (VMPDL) that corresponds to the read-disturb voltage of the SRAM cells.

Abstract: An integrated circuit amplifier includes, in an exemplary embodiment, a first field effect transistor (FET) device configured as a common source amplifier with source degeneration and a second FET device configured as a tunneling gate FET, the tunneling gate FET coupled to the source follower. The tunneling gate FET is further configured so as to set a transconductance of the amplifier and the common source amplifier with source degeneration is configured so as to set an output conductance of the amplifier.

Abstract: A programmable element that has a first diode having an electrode and a first insulator disposed between the substrate and said electrode of said first device, said first insulator having a first value of a given characteristic, and an FET having an electrode and a second insulator disposed between the substrate and said electrode of said second device, said second insulator having a second value of said given characteristic that is different from said first value. The electrodes of the diode and the FET are coupled to one another, and a source of programming energy is coupled to the diode to cause it to permanently decrease in resistivity when programmed. The programmed state of the diode is indicated by a current in the FET, which is read by a sense latch. Thus a small resistance change in the diode translates to a large signal gain/change in the latch. This allows the diode to be programmed at lower voltages.