Abstract: An intact semiconductor wafer (wafer) includes a plurality of die. Each die has a top layer including routings of conductive interconnect structures electrically isolated from each other by intervening dielectric material. A top surface of the top layer corresponds to a top surface of the wafer. Below the top layer, each die has a device layer including optical devices and electronic devices. Each die has a cladding layer below the device layer and on a substrate of the wafer. Each die includes a photonic test port within the device layer. For each die, a light transfer region is formed within the intact wafer to extend through the top layer to the photonic test port within the device layer. The light transfer region provides a window for transmission of light into and out of the photonic test port from and to a location on the top surface of the wafer.

Abstract: An optical data communication system includes an optical transmitter and an optical receiver. A polarization-maintaining optical data communication link extends from an optical output of the optical transmitter to an optical input of the optical receiver. The polarization-maintaining optical data communication link includes at least two sections of polarization-maintaining optical fiber optically connected through an optical connector. The at least two sections of polarization-maintaining optical fiber have different lengths. The optical connector is configured to optically align a fast polarization axis of a first polarization-maintaining optical fiber to a slow polarization axis of a second polarization-maintaining optical fiber. The optical connector is also configured to optically align a slow polarization axis of the first polarization-maintaining optical fiber to a fast polarization axis of the second polarization-maintaining optical fiber.

Abstract: A ring resonator device includes a passive optical cavity having a circuitous configuration into which is built a photodetector device. The photodetector device includes a first implant region formed within the passive optical cavity that includes a first type of implanted doping material. The photodetector device includes a second implant region formed within the passive optical cavity that includes a second type of implanted doping material, where the second type of implanted doping material is different than the first type of implanted doping material. The photodetector device includes an intrinsic absorption region present within the passive optical cavity between the first implant region and the second implant region. A first electrical contact is electrically connected to the first implant region and to a detecting circuit. A second electrical contact is electrically connected to the second implant region and to the detecting circuit.

Abstract: A photonic system includes a passive optical cavity and an optical waveguide. The passive optical cavity has a preferred radial mode for light propagation within the passive optical cavity. The preferred radial mode has a unique light propagation constant within the passive optical cavity. The optical waveguide is configured to extend past the passive optical cavity such that at least some light propagating through the optical waveguide will evanescently couple into the passive optical cavity. The passive optical cavity and the optical waveguide are collectively configured such that a light propagation constant of the optical waveguide substantially matches the unique light propagation constant of the preferred radial mode within the passive optical cavity.

Abstract: A thermo-optic phase shifter includes a substrate having a cavity formed into an upper region of the substrate. The thermo-optic phase shifter includes an optical waveguide disposed above the substrate. The optical waveguide extends across and above the cavity. The thermo-optic phase shifter also includes a heater device disposed along a lateral side of the optical waveguide. The heater device extends across and above the cavity. The cavity is formed by an undercut etching process after the optical waveguide and the heater device is formed. The optical waveguide can be formed to include one or more segments that pass over the cavity. Also, a second heater device can be included such that the one or more segments of the optical waveguide that extend over the cavity are bracketed by heater devices. Thermal transmission structures can be included to enhance heat transfer between the heater device(s) and the optical waveguide.

Abstract: A beam steering structure includes an alignment structure shaped to receive and align an optical fiber such that an axis of a core of the optical fiber is oriented in a first direction. The beam steering structure includes an end portion having an angled optical surface oriented at a non-zero angle relative to the first direction. The end portion is shaped and positioned so that light propagating along the first direction from the optical fiber passes through the end portion to reach the angled optical surface. A reflecting system is positioned on the angled optical surface across the first direction. The reflecting system is configured to reflect incident light propagating along the first direction into a first reflected beam of a first polarization and a second reflected beam of a second polarization. The first and second reflected beams are directed into first and second optical communication channels, respectively.

Abstract: An intact semiconductor wafer (wafer) includes a plurality of die. Each die has a top layer including routings of conductive interconnect structures electrically isolated from each other by intervening dielectric material. A top surface of the top layer corresponds to a top surface of the wafer. Below the top layer, each die has a device layer including optical devices and electronic devices. Each die has a cladding layer below the device layer and on a substrate of the wafer. Each die includes a photonic test port within the device layer. For each die, a light transfer region is formed within the intact wafer to extend through the top layer to the photonic test port within the device layer. The light transfer region provides a window for transmission of light into and out of the photonic test port from and to a location on the top surface of the wafer.

Abstract: A ring resonator device includes a passive optical cavity having a circuitous configuration into which is built a photodetector device. The photodetector device includes a first implant region formed within the passive optical cavity that includes a first type of implanted doping material. The photodetector device includes a second implant region formed within the passive optical cavity that includes a second type of implanted doping material, where the second type of implanted doping material is different than the first type of implanted doping material. The photodetector device includes an intrinsic absorption region present within the passive optical cavity between the first implant region and the second implant region. A first electrical contact is electrically connected to the first implant region and to a detecting circuit. A second electrical contact is electrically connected to the second implant region and to the detecting circuit.

Abstract: An electro-optic combiner includes a polarization splitter and rotator (PSR) that directs a portion of incoming light having a first polarization through a first optical waveguide (OW). The PSR rotates a portion of the incoming light having a second polarization to the first polarization to provide polarization-rotated light. The PSR directs the polarization-rotated light through a second OW. Each of the first and second OW's has a respective combiner section. The first and second OW combiner sections extend parallel to each other and have opposite light propagation directions. A plurality of ring resonators is disposed between the combiner sections of the first and second OW's and within an evanescent optically coupling distance of both the first and second OW's. Each of ring resonators operates at a respective resonant wavelength to optically couple light from the combiner section of the first OW into the combiner section of the second OW.

Abstract: An optical input polarization management device includes a polarization splitter and rotator (PSR) that directs a portion of incoming light having a first polarization through a first optical waveguide (OW). The PSR rotates a portion of the incoming light having a second polarization to the first polarization so as to provide polarization-rotated light. The PSR directs the polarization-rotated light through a second OW. Light within the first and second OW's is input to a first two-by-two optical splitter (2x2OS). A first phase shifter (PS) is interfaced with either the first or second OW. Light is output from the first 2x2OS into a third OW and a fourth OW. Light within the third and fourth OW's is input to a second 2x2OS. A second PS is interfaced with either the third or fourth OW. Light is output from the second 2x2OS into a fifth OW for further processing.

Abstract: An electro-optic receiver includes a polarization splitter and rotator (PSR) that directs incoming light having a first polarization through a first end of an optical waveguide, and that rotates incoming light from a second polarization to the first polarization to create polarization-rotated light that is directed to a second end of the optical waveguide. The incoming light of the first polarization and the polarization-rotated light travel through the optical waveguide in opposite directions. A plurality of ring resonators is optically coupled the optical waveguide.

Abstract: A photonic system includes a passive optical cavity and an optical waveguide. The passive optical cavity has a preferred radial mode for light propagation within the passive optical cavity. The preferred radial mode has a unique light propagation constant within the passive optical cavity. The optical waveguide is configured to extend past the passive optical cavity such that at least some light propagating through the optical waveguide will evanescently couple into the passive optical cavity. The passive optical cavity and the optical waveguide are collectively configured such that a light propagation constant of the optical waveguide substantially matches the unique light propagation constant of the preferred radial mode within the passive optical cavity.

Abstract: A handle-integrated composite wafer assembly includes a handle wafer attached to a device wafer. The device wafer includes a device layer formed on a buried oxide layer. The device layer includes an optical resonator structure. The handle wafer includes a base layer and a layer of anti-reflective material disposed on a top side of the base layer. The base layer has a cavity extending into the base layer from the top side of the base layer. The cavity has at least one side surface and a bottom surface. The layer of anti-reflective material is substantially conformally disposed within the cavity on the at least one side surface and bottom surface of the cavity. The handle wafer is attached to the device wafer with the layer of anti-reflective material affixed to the buried oxide layer, and with the cavity substantially aligned with the optical resonator structure in the device layer.

Abstract: A grating coupler reflector (retro reflector) is formed within a photonics chip and includes a vertical scattering region, an optical waveguide, and a reflector. The optical waveguide is optically coupled to the vertical scattering region. The reflector is positioned at an end of the optical waveguide. The reflector is configured to reflect light that propagates through the optical waveguide from the vertical scattering region back toward the vertical scattering region. The location of the grating coupler reflector on the photonics chip is determinable by scanning a light emitting active optical fiber over the chip and detecting when light is reflected back into the active optical fiber from the grating coupler reflector. The determined location of the grating coupler reflector on the photonics chip is usable as a reference location for aligning optical fiber(s) to corresponding optical grating couplers on the photonics chip.

Abstract: An electro-optical chip includes an optical input port, an optical output port, and an optical waveguide having a first end optically connected to the optical input port and a second end optically connected to the optical output port. The optical waveguide includes one or more segments. Different segments of the optical waveguide extends in either a horizontal direction, a vertical direction, a direction between horizontal and vertical, or a curved direction. The electro-optical chip also includes a plurality of optical microring resonators is positioned along at least one segment of the optical waveguide. Each microring resonator of the plurality of optical microring resonators is optically coupled to a different location along the optical waveguide. The electro-optical chip also includes electronic circuitry for controlling a resonant wavelength of each microring resonator of the plurality of optical microring resonators.

Abstract: A handle-integrated composite wafer assembly includes a handle wafer attached to a device wafer. The device wafer includes a device layer formed on a buried oxide layer. The device layer includes an optical resonator structure. The handle wafer includes a base layer and a layer of anti-reflective material disposed on a top side of the base layer. The base layer has a cavity extending into the base layer from the top side of the base layer. The cavity has at least one side surface and a bottom surface. The layer of anti-reflective material is substantially conformally disposed within the cavity on the at least one side surface and bottom surface of the cavity. The handle wafer is attached to the device wafer with the layer of anti-reflective material affixed to the buried oxide layer, and with the cavity substantially aligned with the optical resonator structure in the device layer.

Abstract: An optical module includes a laser light supply system and a chip disposed within a housing. The chip includes a laser input optical port and a transmit data optical port and a receive data optical port. The optical module includes a link-fiber interface exposed at an exterior surface of the housing. The link-fiber interface includes a transmit data connector and a receive data connector. The optical module includes a polarization-maintaining optical fiber connected between a laser output optical port of the laser light supply system and the laser input optical port of the chip. The optical module includes a first non-polarization-maintaining optical fiber connected between the transmit data optical port of the chip and the transmit data connector of the link-fiber interface. The optical module includes a second non-polarization-maintaining optical fiber connected between the receive data optical port of the chip and the receive data connector of the link-fiber interface.

Abstract: An intact semiconductor wafer (wafer) includes a plurality of die. Each die has a top layer including routings of conductive interconnect structures electrically isolated from each other by intervening dielectric material. A top surface of the top layer corresponds to a top surface of the wafer. Below the top layer, each die has a device layer including optical devices and electronic devices. Each die has a cladding layer below the device layer and on a substrate of the wafer. Each die includes a photonic test port within the device layer. For each die, a light transfer region is formed within the intact wafer to extend through the top layer to the photonic test port within the device layer. The light transfer region provides a window for transmission of light into and out of the photonic test port from and to a location on the top surface of the wafer.

Abstract: A photonic system includes a passive optical cavity and an optical waveguide. The passive optical cavity has a preferred radial mode for light propagation within the passive optical cavity. The preferred radial mode has a unique light propagation constant within the passive optical cavity. The optical waveguide is configured to extend past the passive optical cavity such that at least some light propagating through the optical waveguide will evanescently couple into the passive optical cavity. The passive optical cavity and the optical waveguide are collectively configured such that a light propagation constant of the optical waveguide substantially matches the unique light propagation constant of the preferred radial mode within the passive optical cavity.

Abstract: A ring resonator device includes a passive optical cavity having a circuitous configuration into which is built a photodetector device. The photodetector device includes a first implant region formed within the passive optical cavity that includes a first type of implanted doping material. The photodetector device includes a second implant region formed within the passive optical cavity that includes a second type of implanted doping material, where the second type of implanted doping material is different than the first type of implanted doping material. The photodetector device includes an intrinsic absorption region present within the passive optical cavity between the first implant region and the second implant region. A first electrical contact is electrically connected to the first implant region and to a detecting circuit. A second electrical contact is electrically connected to the second implant region and to the detecting circuit.