Abstract: Embodiments disclosed herein include dielectric resonators for microwave plasma application. In an embodiment, such an apparatus comprises a dielectric puck, where the dielectric puck has a cylindrical shape. In an embodiment, the dielectric puck comprises a first region with a first dielectric constant, and a second region with a second dielectric constant that is different than the first dielectric constant. In an embodiment, the dielectric puck further comprises a hole into a top surface of the dielectric puck.

Abstract: Data associated with a power testing process performed for a substrate support assembly is provided as input to a trained machine learning model. A measurement value for an electron flow across one or more components of the substrate support assembly in accordance with the power testing process is obtained based on one or more outputs of the trained machine learning model. A first quality rating or a second quality rating is assigned to the substrate support assembly based on whether the measurement value satisfies an electron flow criterion, wherein the first quality rating indicates a higher quality than the second quality rating. An indication of whether the substrate support assembly is to be installed at a processing chamber in view of the assigned second quality rating is transmitted to a client device.

Abstract: Methods and systems for rating a current substrate support assembly based on impedance circuit electron flow are provided. Data associated with an amount of radio frequency (RF) power flowed through an electrical component of a current substrate support assembly during a current testing process performed for the current substrate support assembly is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. A measurement value for an electron flow across an impedance circuit of the current substrate support assembly is extracted from the one or more outputs. In response to a determination that the extracted measurement value for the electron flow satisfies an electron flow criterion, a first quality rating is assigned to the current substrate support assembly.

Abstract: Embodiments disclosed herein include a dynamic load simulator. In an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RF controller. In an embodiment, the smart RF controller comprises a dynamic load generator, and a reverse match controller.

Abstract: Embodiments disclosed herein include a dynamic load simulator. In an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RF controller. In an embodiment, the smart RF controller comprises a dynamic load generator, and a reverse match controller.

Abstract: Embodiments disclosed herein include semiconductor processing tools. In an embodiment, the semiconductor processing tool comprises a chamber, a chuck within the chamber, where the chuck is configured to rotate, a pedestal holder around the chuck, and a utility column coupled to the chuck. In an embodiment, the utility column comprises a magnetic coupler to enable rotation of portions of the utility column and the chuck, and a rotary electrical feedthrough.

Abstract: Embodiments disclosed herein include a dynamic load simulator. In an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RF controller. In an embodiment, the smart RF controller comprises a dynamic load generator, and a reverse match controller.

Abstract: Methods and systems for rating a current substrate support assembly based on impedance circuit electron flow are provided. Data associated with an amount of radio frequency (RF) power flowed through an electrical component of a current substrate support assembly during a current testing process performed for the current substrate support assembly is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. A measurement value for an electron flow across an impedance circuit of the current substrate support assembly is extracted from the one or more outputs. In response to a determination that the extracted measurement value for the electron flow satisfies an electron flow criterion, a first quality rating is assigned to the current substrate support assembly.

Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.

Abstract: A method of gene editing or gene stacking within a FAD3 loci by cleaving, in a site directed manner, a location in a FAD3 gene in a cell, to generate a break in the FAD3 gene and then ligating into the break a nucleic acid molecule associated with one or more traits of interest is disclosed.

Abstract: An Engineered Transgene Integration Platform (ETIP) is described that can be inserted randomly or at targeted locations in plant genomes to facilitate rapid selection and detection of a GOI that is perfectly targeted (both the 5? and 3? ends) at the ETIP genomic location. One element in the subject disclosure is the introduction of specific double stranded breaks within the ETIP. In some embodiments, an ETIP is described using zinc finger nuclease binding sites, but may utilize other targeting technologies such as meganucleases, CRISPRs, TALs, or leucine zippers. Also described are compositions of, and methods for producing, transgenic plants wherein the donor or payload DNA expresses one or more products of an exogenous nucleic acid sequence (e.g. protein or RNA) that has been stably-integrated into an ETIP in a plant cell. In embodiments, the ETIP facilitates testing of gene candidates and plant expression vectors from ideation through Development phases.

Abstract: A method of gene editing or gene stacking within a FAD3 loci by cleaving, in a site directed manner, a location in a FAD3 gene in a cell, to generate a break in the FAD3 gene and then ligating into the break a nucleic acid molecule associated with one or more traits of interest is disclosed.

Abstract: A method of gene editing or gene stacking within a FAD2 loci by cleaving, in a site directed manner, a location in a FAD2 gene in a cell, to generate a break in the FAD2 gene and then ligating into the break a nucleic acid molecule associated with one or more traits of interest is disclosed.

Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.

Abstract: A method of gene editing or gene stacking within a FAD3 loci by cleaving, in a site directed manner, a location in a FAD3 gene in a cell, to generate a break in the FAD3 gene and then ligating into the break a nucleic acid molecule associated with one or more traits of interest is disclosed.

Abstract: Variable geometry process kits for use in semiconductor process chambers have been provided herein. In some embodiments, a process kit for use in a semiconductor process chamber includes: an annular body configured to rest about a periphery of a substrate support; a first ring positioned coaxially with the annular body and supported by the annular body; a second ring positioned coaxially with the first ring and supported by the first ring; and an annular shield comprising a horizontal leg positioned coaxially with the second ring such that a portion of the horizontal leg is aligned with and below portions of the first ring and second ring.

Abstract: A method of gene editing or gene stacking within a FAD2 loci by cleaving, in a site directed manner, a location in a FAD2 gene in a cell, to generate a break in the FAD2 gene and then ligating into the break a nucleic acid molecule associated with one or more traits of interest is disclosed.

Abstract: A method of gene editing or gene stacking within a FAD3 loci by cleaving, in a site directed manner, a location in a FAD3 gene in a cell, to generate a break in the FAD3 gene and then ligating into the break a nucleic acid molecule associated with one or more traits of interest is disclosed.

Abstract: A method of gene editing or gene stacking within a FAD2 loci by cleaving, in a site directed manner, a location in a FAD2 gene in a cell, to generate a break in the FAD2 gene and then ligating into the break a nucleic acid molecule associated with one or more traits of interest is disclosed.

Abstract: A method of gene editing or gene stacking within a FAD3 loci by cleaving, in a site directed manner, a location in a FAD3 gene in a cell, to generate a break in the FAD3 gene and then ligating into the break a nucleic acid molecule associated with one or more traits of interest is disclosed.