Patents by Inventor John Francis Lehmann
John Francis Lehmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11913112Abstract: Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS).Type: GrantFiled: January 27, 2022Date of Patent: February 27, 2024Assignee: Versum Materials US, LLCInventors: Xinjian Lei, Jianheng Li, John Francis Lehmann, Alan Charles Cooper
-
Publication number: 20220154331Abstract: Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.Type: ApplicationFiled: January 27, 2022Publication date: May 19, 2022Applicant: VERSUM MATERIALS US, LLCInventors: XINJIAN LEI, JIANHENG LI, JOHN FRANCIS LEHMANN, ALAN CHARLES COOPER
-
Patent number: 11268190Abstract: Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.Type: GrantFiled: June 14, 2016Date of Patent: March 8, 2022Assignee: Versum Materials US, LLCInventors: Xinjian Lei, Jianheng Li, John Francis Lehmann, Alan Charles Cooper
-
Publication number: 20200032389Abstract: Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.Type: ApplicationFiled: June 14, 2016Publication date: January 30, 2020Inventors: Xinjian Lei, Jianheng Li, John Francis Lehmann, Alan Charles Cooper
-
Publication number: 20190017167Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.Type: ApplicationFiled: September 18, 2018Publication date: January 17, 2019Applicant: Versum Materials US, LLCInventors: Raymond Nicholas Vrtis, William Robert Entley, Robert Gordon Ridgeway, Xinjian Lei, John Francis Lehmann, Manchao Xiao
-
Patent number: 10106890Abstract: Compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.Type: GrantFiled: October 23, 2015Date of Patent: October 23, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Jianheng Li, John Francis Lehmann, Xinjian Lei, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, William Robert Entley
-
Publication number: 20170335449Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.Type: ApplicationFiled: October 23, 2015Publication date: November 23, 2017Inventors: Jianheng LI, John Francis LEHMANN, Xinjian LEI, Raymond Nicholas VRTIS, Robert Gordon RIDGEWAY, William Robert ENTLEY
-
Publication number: 20140196664Abstract: Condensable materials, such as but not limited to tungsten fluoride (WF6), can be used deposit films in a chemical vapor deposition (CVD) process. Described herein are methods to collect and reuse the condensable materials that are unreacted in the production process rather than treat these materials as waste. In one embodiment, when a condensable material, such as gaseous WF6, is not supplied to the CVD reactor, it is redirected to a recovery cabinet for capture.Type: ApplicationFiled: January 7, 2014Publication date: July 17, 2014Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Andrew David Johnson, Rajiv Krishan Agarwal, Heui-Bok Ahn, William Jack Casteel, JR., Eugene Joseph Karwacki, JR., John Francis Lehmann, David Charles Winchester
-
Publication number: 20120277457Abstract: Aminosilanes, such as diisopropylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make these aminosilanes as well as intermediate compounds such as haloaminosilane compounds having the following formula: X4-nHn-1SiN(CH(CH3)2)2 wherein n is a number selected from 1, 2 and 3; and X is a halogen selected from Cl, Br, or a mixture of Cl and Br provided that when X is Cl, n is not 1.Type: ApplicationFiled: October 3, 2011Publication date: November 1, 2012Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: John Francis Lehmann, Howard Paul Withers, JR.
-
Patent number: 8206676Abstract: The method described herein provides a method for preparing a chlorinated silane at least one end product comprising SiH3Cl, SiH2Cl2, and combinations thereof in molar yields of 50% or greater with respect to silane in the feed stream. The method described herein therefore provides an end product comprising the one or more chlorinated silanes by contacting reaction mixture comprising silane and hydrogen chloride with a catalyst at a temperature and time sufficient to provide the end product.Type: GrantFiled: April 6, 2010Date of Patent: June 26, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Rajiv K. Agarwal, John Francis Lehmann, Charles Gardner Coe, Daniel Joseph Tempel
-
Publication number: 20110113628Abstract: The method described herein provides a method for preparing a chlorinated silane at least one end product comprising SiH3Cl, SiH2Cl2, and combinations thereof in molar yields of 50% or greater with respect to silane in the feed stream. The method described herein therefore provides an end product comprising the one or more chlorinated silanes by contacting reaction mixture comprising silane and hydrogen chloride with a catalyst at a temperature and time sufficient to provide the end product.Type: ApplicationFiled: April 6, 2010Publication date: May 19, 2011Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Rajiv K. Agarwal, John Francis Lehmann, Charles Gardner Coe, Daniel Joseph Tempel