Abstract: The present invention is directed to processes for the preparation of substituted phenylpyrazole ureas of Formula (I), that are useful as 5-HT2A serotonin receptor modulators for the treatment of disease.

Abstract: The present invention relates to processes for preparing aromatic ether compounds that are modulators of glucose metabolism and therefore useful in the treatment of metabolic disorders such as diabetes and obesity.

Abstract: This invention relates to the manufacture of dual damascene interconnect structures in integrated circuit devices. Specifically, a method is disclosed for forming a single or dual damascene structure in a low-k dielectric thin film utilizing a planarizing material and a diffusion barrier material. In a preferred dual damascene embodiment of this method, the vias are formed first in the dielectric material, then the planarizing material is deposited in the vias and on the dielectric material, and the barrier material is deposited on the planarizing material. The trenches are then formed lithographically in the imaging material, etched through the barrier material into the planarizing material, and the trench pattern is transferred to the dielectric material. During and following the course of these etch steps, the imaging, barrier and planarizing materials are removed. The resultant dual damascene structure may then be metallized.

Abstract: A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.

Abstract: A process for the production of vinyl acetate comprising contacting in a first reaction zone a gaseous feedstock comprising essentially ethane with a molecular oxygen-containing gas in the presence of a catalyst to produce a first product stream comprising acetic acid; contacting in a second reaction zone a gaseous feedstock comprising essentially ethane with a molecular oxygen-containing gas in the product stream comprising ethylene; contacting in a third reaction one the first gaseous product stream and the second gaseous product stream with a molecular oxygen-containing gas in the presence of a catalyst to produce a fourth product stream comprising vinyl acetate; separating the product stream from step (3) and recovering vinyl acetate from said product stream from step (3).

Abstract: An integrated process for the production of vinyl acetate comprising the steps of: (a) containing in a first reaction zone a gaseous feedstock comprising essentially ethane with a molecular oxygen-containing gas in the presence of a catalyst to produce a first product stream comprising acetic acid and ethylene; (b) containing in a second reaction zone the first gaseous product stream with a molecular oxygen-containing gas in the presence of a catalyst to produce a second product stream comprising vinyl acetate; (c) separating the product stream from step (b) recovering vinyl acetate from the product stream from step (b).

Abstract: A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.