Abstract: A novel pad-in-a-bottle (PIB) technology for advanced chemical-mechanical planarization (CMP) copper barrier CMP compositions, systems and processes has been disclosed for use with polyurethane-based polishing pads having a plurality of asperities. The CMP composition comprises abrasives, polyurethane beads, and surfactant. The polishing pad lifetime increasing is achieved using PIB-type Cu barrier CMP polishing composition.

Abstract: Methods of determining the endpoint of cleaning residues from the internal surfaces of a chemical vapor deposition chamber are described. The methods are especially useful for determining when organic-based residues deposited from an ultra low-k film precursor deposition are removed from the chamber. The methods involve cleaning the chamber with a plasma comprising fluorine and oxygen while monitoring the intensity of the optical emission lines of one or more atomic or molecular species that correlate to the removal of the organic-based residues. Techniques and apparatuses for monitoring different appropriate emission lines are described. Methods of the invention can be used to prevent particle contamination during CVD operations following ultra low-k film precursor depositions and improve wafer throughput in manufacturing environments.

Abstract: In accordance with an embodiment of the present intention, a fluorine residue removing method includes: supplying an oxygen-containing gas and a hydrogen-containing gas into a CVD chamber; producing a plasma of a mixture of the oxygen-containing gas and the-hydrogen containing gas, so that the plasma reacts with the fluorine residue, exothermically generating water; and evacuating from the CVD chamber a product of the reaction between the plasma and the fluorine residue. For the hydrogen-containing gas, NH3 is often used, and for the oxygen-containing gas, N2O, O2, or air is used. Exemplary mixtures of the oxygen-containing and the hydrogen-containing gases include 70 mol % N2O/NH3, 50 mol % N2O/NH3, and 52 mol % O2/NH3. An inert gas, such as He, Ne, Ar, or Kr, can be optionally supplied into the chamber to stabilize the plasma.

Abstract: The present invention is directed to the etching of a material selected from the group consisting of silicon dioxide, silicon nitride, boronphosphorus silicate glass, fluorosilicate glass, siliconoxynitride, tungsten, tungsten silicide and mixtures thereof under plasma etch conditions, particularly for cleaning operations to remove silicon dioxide or silicon nitride from the walls and other surfaces within a reaction chamber of a plasma-enhanced chemical vapor deposition reactor. The etching chemicals used in the etch process are trifluoroacetic acid and it derivatives, such as; trifluoroacetic anhydride, trifluoromethyl ester of trifluoroacetic acid and trifluoroacetic acid amide and mixtures thereof.

Abstract: The present invention is a process of removal of moisture from surfaces, such as metal conduit for transmission of high purity gases in electronic component fabrication facilities, and the passivation of such metal surfaces to retard the readsorption of moisture, wherein the moisture removal and passivation is enhanced using an agent of the formula: R.sub.a SiX.sub.b Y.sub.c Z.sub.d where a =1-3; b, c, and d are individually 0-3 and a+b+c+d=4; R is one or more organic groups; and at least one of X, Y or Z have a bond to silicon that is readily hydrolyzable. The moisture removal and passivation is conducted at less than 65.degree. C. and at least ambient pressure.

Abstract: A method has been developed for the removal of silicon nitride and silicon dioxide, or other semiconductor materials from a surface of a wafer or CVD reactor. The method uses NF.sub.3, mixed with an electropositive diluent, preferably argon, at a given range of concentration, pressure, flowrate, and power to obtain the fastest possible etch rates. The etch rates of the film being processed can be caused to increase even as the concentration of NF.sub.3 in the diluent is decreased by choosing the proper diluent and operating conditions. Not only does this method increase the etch rate, thereby increasing the throughput of the reactor using this process, it also accomplishes this task at low concentrations of NF3 resulting in a lower cost.