Patents by Inventor John G. Nowland

John G. Nowland has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9259820
    Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: February 16, 2016
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Bainian Qian, Marty W. DeGroot, James Murnane, Angus Repper, Michelle Jensen, Jeffrey J. Hendron, John G. Nowland, David B. James, Fengji Yeh
  • Patent number: 9238295
    Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: January 19, 2016
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Bainian Qian, Michelle K. Jensen, Marty W. DeGroot, Angus Repper, James Murnane, Jeffrey James Hendron, John G. Nowland, David B. James, Fengji Yeh
  • Patent number: 9238296
    Abstract: A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: January 19, 2016
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: James Murnane, Bainian Qian, John G. Nowland, Michelle K. Jensen, Jeffrey James Hendron, Marty W. DeGroot, David B. James, Fengji Yeh
  • Patent number: 9233451
    Abstract: A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: January 12, 2016
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: James Murnane, Bainian Qian, John G. Nowland, Michelle K. Jensen, Jeffrey James Hendron, Marty W. DeGroot, David B. James, Fengji Yeh
  • Publication number: 20150273652
    Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.
    Type: Application
    Filed: March 28, 2014
    Publication date: October 1, 2015
    Inventors: Bainian Qian, Marty W. DeGroot, James Murnane, Angus Repper, Michelle Jensen, Jeffrey J. Hendron, John G. Nowland, David B. James, Fengji Yeh
  • Patent number: 9102034
    Abstract: A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: August 11, 2015
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Michelle Jensen, Bainian Qian, Fengji Yeh, Marty W. DeGroot, Mohammad T. Islam, Matthew Richard Van Hanehem, Darrell String, James Murnane, Jeffrey James Hendron, John G. Nowland
  • Patent number: 9064806
    Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and a window incorporated into the polishing layer; wherein the polishing layer comprises a reaction product of ingredients, including: a polishing layer prepolymer and a polishing layer curative system; wherein the polishing layer curative system includes a polishing layer amine initiated polyol curative, a polishing layer high molecular weight polyol curative and a polishing layer difunctional curative; and, wherein the window comprises a reaction product of ingredients, including: a window prepolymer and a window curative system; wherein the window curative system includes a window difunctional curative, a window amine initiated polyol curative and a window high molecular weight polyol curative; and, wherein the polishing layer exhibits a density of ?0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: June 23, 2015
    Assignees: Rohm and Haas Electronics Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Bainian Qian, Marty W. DeGroot, Michelle Jensen, James Murnane, Jeffrey J. Hendron, John G. Nowland, David B. James, Fengji Yeh
  • Publication number: 20150065014
    Abstract: A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.
    Type: Application
    Filed: August 30, 2013
    Publication date: March 5, 2015
    Inventors: Michelle Jensen, Bainian Qian, Fengji Yeh, Marty W. DeGroot, Mohammad T. Islam, Matthew Richard Van Hanehem, Darrell String, James Murnane, Jeffrey James Hendron, John G. Nowland
  • Publication number: 20150065013
    Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a specific gravity of greater than 0.6; a Shore D hardness of 60 to 90; an elongation to break of 100 to 300%; and, a unique combination of an initial hydrolytic stability and a sustained hydrolytic instability.
    Type: Application
    Filed: August 30, 2013
    Publication date: March 5, 2015
    Inventors: Michelle Jensen, Bainian Qian, Fengji Yeh, Marty W. DeGroot, Mohammad T. Islam, Matthew Richard Van Hanehem, Darrell String, James Murnane, Jeffrey James Hendron, John G. Nowland
  • Publication number: 20140357163
    Abstract: A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.
    Type: Application
    Filed: May 31, 2013
    Publication date: December 4, 2014
    Inventors: James Murnane, Bainian Qian, John G. Nowland, Michelle K. Jensen, Jeffrey James Hendron, Marty W. DeGroot, David B. James, Fengji Yeh
  • Publication number: 20140357170
    Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.
    Type: Application
    Filed: May 31, 2013
    Publication date: December 4, 2014
    Inventors: Bainian Qian, Michelle K. Jensen, Marty W. DeGroot, Angus Repper, James Murnane, Jeffrey James Hendron, John G. Nowland, David B. James, Fengji Yeh
  • Publication number: 20140357169
    Abstract: A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.
    Type: Application
    Filed: May 31, 2013
    Publication date: December 4, 2014
    Inventors: James Murnane, Bainian Qian, John G. Nowland, Michelle K. Jensen, Jeffrey James Hendron, Marty W. DeGroot, David B. James, Fengji Yeh